unisonic technologies co., ltd 8n50h power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2012 unisonic technologies co., ltd qw-r502-745.a 8 a , 500v n-channel power mosfet ? description the utc 8n50h is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior switching per formance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 8n50h is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. ? features * r ds(on) =0.8 ? @ v gs =10v * high switching speed * 100% avalanche tested ? symbol 1.gate 3.source 2.drain to-220f 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 8N50HL-TF3-T 8n50hg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
8n50h power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-745.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v drain current continuous (t c =25c) i d 7 (note 2) a avalanche current (note 3) i ar 7 a single pulsed avalanche energy (note 4) e as 270 mj power dissipation p d w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. drain current limited by maximum junction temperature 3. repetitive rating: pulse width lim ited by maximum junction temperature 4. l = 10mh, i as = 8a, v dd = 50v, r g = 25 ? , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja c/w junction to case jc c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v drain-source leakage current i dss v ds =500v, v gs =0v 1 a gate- source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =3.5a 0.8 1 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz pf output capacitance c oss pf reverse transfer capacitance c rss pf switching parameters total gate charge q g v dd =50v, i d =1.3a, i g =100ua, v gs =10v (note 1, 2) 12.8 16.6 nc gate to source charge q gs 3.7 nc gate to drain charge q gd 5.8 nc turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? , v gs =0~10v (note 1, 2) 6 20 ns rise time t r 55 120 ns turn-off delay time t d ( off ) 25 60 ns fall-time t f 35 80 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 7 a drain-source diode forward voltage v sd i s =7a, v gs =0v 1.4 v notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
8n50h power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-745.a ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circui t gate charge waveforms resistive switching test circui t resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
8n50h power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-745.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver peak diode recovery dv/dt test circuit & waveforms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current
8n50h power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-745.a ? typical characteristics drain current, i d (a) drain current, i d (a) drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 2 5 0 0.5 1 1.5 2 1 3 4 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current, i d (a) 0.2 0.4 0.6 0.8 1.0 0 2 4 2.5 3 v gs =10v, i d =3.5a 6 10 8 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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