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| ace 632 n&p pair enhancement mode mosfet ver 1. 3 1 d escription the ace 632 is the n - and p - channel enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance and provide super ior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high - side switching, low in - line power loss, and resistance to transients are needed. features ? n - channel 20v/0.95a,r ds(on) =380m@v gs =4.5v 20v/0.75a,r ds(on) =450m@v gs =2.5v 20v/0.65a,r ds(on) =800m@v gs =1.8v ? p - channel - 20v/1.0a,r ds(on) = 520m@v gs = - 4.5v - 20v/0.8a,r ds(on) = 700m@v gs = - 2.5v - 20v/0.7a,r ds(on) = 950m@v gs = - 1.8v ? super high de nsity cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capabilit y application ? power management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter absolute maxi mum ratings (t a =25 unless otherwise noted) p arameter s ymbol typical u nit n - channel p - channel drain - source voltage v ds 20 - 20 v gate - source voltage v gs 12 12 v continuous drain current ( t j = 1 5 0 ) t a =25 i d 1.2 - 1.0 a t a =80 0.9 - 0.7 pulsed drain current 1) i dm 4 - 3 a c ontinuous source current (diode conduction) i s 0.6 - 0.6 power dissipation t a =25 p d 0.3 w t a =70 0.19
ace 632 n&p pair enhancement mode mosfet ver 1. 3 2 operating junction temperature t j - 55 to 150 o c storage temperature range t stg - 55 to 150 o c thermal resistance - junction to ambient t Q 10sec r ja 360 360 o c /w steady state 400 400 packaging type sc - 70 - 6 6 5 4 1 2 3 n - channel p - chan nel ordering i nformation ace 632 xx + h s c - 7 0 - 6 description 1 source 1 2 gate 1 3 drain 2 4 source 2 5 gate 2 6 drain 1 hm : sc - 70 - 6 pb - free halogen - free ace 632 n&p pair enhancement mode mosfet ver 1. 3 3 electrical characteristics parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250ua n - ch 20 v v gs =0v, i d =250ua p - ch - 20 drain - source on resistance r ds(on) v gs =4.5v, i d =0.95a n - ch 0.26 0.38 v gs = - 4.5v, i d = - 1.0a p - ch 0.42 0.52 v gs =2.5v, i d =0.75a n - ch 0.32 0.45 v gs = - 2.5v, i d = - 0.8a p - ch 0.58 0.70 v gs =1.8v, i d =0.65a n - ch 0.42 0.80 v gs = - 1.8v, i d = - 0 .5a p - ch 0.75 0.95 gate threshold voltage v gs(th) v ds =v gs , i d =250ua n - ch 0.35 1.0 v v ds =v gs , i d = - 250ua p - ch - 0.35 - 1.0 gate leakage current i gss v ds =0v, v gs =12v n - ch 100 na v ds =0v, v gs =12v p - ch - 100 zero gate voltage drain current i dss v ds =20v, v gs =0v n - ch 1 ua v ds = - 20v, v gs =0v p - ch - 1 v ds =20v, v gs =0v t j =55 n - ch 5 v ds = - 20v, v gs =0v t j =55 p - ch - 5 on - state drain current i d(on) v ds R 4.5v , v gs =5v n - ch 2 a v ds Q - 4.5v , v gs = - 5v p - ch - 2 diode forward voltage v sd i s =0.5a, v gs =0v n - ch 0.8 1.2 v i s = - 0.5a, v gs =0v p - ch - 0.8 - 1.2 forward transcon ductance g fs v ds =10v, i d =1.2a n - ch 2.6 s v ds = - 10v, i d = - 1.0a p - ch 1.5 dynamic total gate charge q g n - channel v ds =10v, v gs =4.5v, i d 1.2a p - channel v ds = - 10v, v gs = - 4.5v, i d - 1.0a n - ch 1.2 2.0 nc p - ch 1.1 1.8 gate - source charge q gs n - ch 0. 2 p - ch 0.3 gate - drain charge q gd n - ch 0.3 p - ch 0.2 turn - on time t d(on) n - channel v dd =10v,rl=20 i d =0.5a, n - ch 15 25 ns p - ch 18 30 t r n - ch 20 30 ace 632 n&p pair enhancement mode mosfet ver 1. 3 4 v gen =4.5v,r g =6 p - channel v dd = - 10v,rl=20 i d = - 0.5a, v gen = - 4.5v, r g =6 p - c h 25 40 turn - off time t d(off) n - ch 25 40 p - ch 20 30 t f n - ch 12 20 p - ch 12 20 typical c haracteristics (n - channel) ace 632 n&p pair enhancement mode mosfet ver 1. 3 5 typical c haracteristics (n - channel) ace 632 n&p pair enhancement mode mosfet ver 1. 3 6 typical c haracteristics (n - channel) ace 632 n&p pair enhancement mode mosfet ver 1. 3 7 typical c haracteristics (p - channel) ace 632 n&p pair enhancement mode mosfet ver 1. 3 8 typical c haracteristics (p - channel) ace 632 n&p pair enhancement mode mosfet ver 1. 3 9 typical c haracteristics (p - channel) ace 632 n&p pair enhancement mode mosfet ver 1. 3 10 packing information s c - 70 - 6 ace 632 n&p pair enhancement mode mosfet ver 1. 3 11 notes ace does not assume any responsibility for use as critical components in life supp ort devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any compone nt of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/ |
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