unisonic technologies co., ltd UD4614 power mosfet www.unisonic.com.tw 1 of 9 copyright ? 2008 unisonic technologies co., ltd qw-r502-147.b dual enhancement mode (n-channel/p-channel) ? description the utc UD4614 can provide excellent r ds(on) and low gate charge by using advanced trench technology mosfets. the utc UD4614 may be used in h-bridge, inverters and other applications. ? features * n-channel: 40v/6a r ds(on) = 23.2m ? (typ.) @ v gs =10v r ds(on) = 32.6m ? (typ.) @ v gs = 4.5v * p-channel: -40v/-5a r ds(on) = 34.7m ? (typ.) @ v gs = -10v r ds(on) = 50.6m ? (typ.) @ v gs = -4.5v * super high dense cell design * reliable and rugged ? symbol ? ordering information ordering number lead free halogen free package packing UD4614l-s08-r UD4614g-s08-r sop-8 tape reel
UD4614 power mosfet unisonic technologies co., ltd 2 of 9 www.unisonic.com.tw qw-r502-147.b ? pin configuration
UD4614 power mosfet unisonic technologies co., ltd 3 of 9 www.unisonic.com.tw qw-r502-147.b ? absolute maximum ratings (ta = 25c, unless otherwise specified) n-channel: parameter symbol ratings unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current (note3) t c =25c i d 6 a pulsed drain current (note3) t c =25c i dm 20 a t c =25c 2 w power dissipation t c =100c p d 1.28 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c p-channel: parameter symbol ratings unit drain-source voltage v ds -40 v gate-source voltage v gs 20 v continuous drain current (note3) t c =25c i d -5 a pulsed drain current (note3) t c =25c i dm -20 a t c =25c 2 w power dissipation t c =100c p d 1.28 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient (note3) ja 74 110 c/w ? electrical characteristics (ta =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =10ma 40 v drain-source leakage current i dss v ds =32v, v gs =0v 1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250ua 1 2.3 3 v v gs =10v, i d =6a 23.2 31 m ? drain-source on-state resistance (note2) r ds(on) v gs =4.5v, i d =5a 32.6 45 m ? dynamic characteristics input capacitance c iss 404 pf output capacitance c oss 95 pf reverse transfer capacitance c rss v gs =0v,v ds =20v,f=1.0mhz 37 pf switching characteristics turn-on delay time (note2) t d(on) 4.2 ns turn-on rise time t r 3.3 ns turn-off delay time t d(off) 15.6 ns turn-off fall time t f v ds =20v, v gs =10v, r g =3 ? , r l =3.3 ? 3 ns total gate charge (note2) q g 8.3 nc gate-source charge q gs 1.3 nc gate-drain charge q gd v ds =20v, v gs =10v, i d =6a 2.3 nc
UD4614 power mosfet unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r502-147.b ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =1a, v gs =0v 0.77 1 v diode continuous forward current i s 3 a reverse recovery time t rr 20.5 ns reverse recovery charge q rr i ds =6a, di/dt=100a/ s 14.5 nc p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-10ma -40 v drain-source leakage current i dss v ds =-32v, v gs =0v -1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -1 -1.9 -3 v v gs =-10v, i d =-5a 34.7 45 m ? drain-source on-state resistance (note2) r ds(on) v gs =-4.5v, i d =-2a 50.6 63 m ? dynamic characteristics input capacitance c iss 657 pf output capacitance c oss 143 pf reverse transfer capacitance c rss v gs =0v,v ds =-20v,f=1.0mhz 63 pf switching characteristics turn-on delay time (note2) t d(on) 7.5 ns turn-on rise time t r 6.7 ns turn-off delay time t d(off) 26 ns turn-off fall time t f v ds =-20v, v gs =-10v, r g =3 ? , r l =4 ? 11.2 ns total gate charge (note2) q g 13.6 nc gate-source charge q gs 1.8 nc gate-drain charge q gd v ds =-20v, v gs =-10v, i d =-5a 3.9 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =-1a, v gs =0v -0.75 -1 v diode continuous forward current i s -3.2 a reverse recovery time t rr 22.3 ns reverse recovery charge q rr i ds =-5a, di/dt=100a/ s 15.2 nc notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 1in 2 pad area, t 10sec .
UD4614 power mosfet unisonic technologies co., ltd 5 of 9 www.unisonic.com.tw qw-r502-147.b ? typical characteristics n-channel v ds =5v 125 25 20 15 10 5 0 2 2.5 3 3.5 4 4.5 gate source voltage, v gs (v) drain current, i d (a) transfer characteristics 4.5v 4v v gs =3.5v 5v 10v 30 25 20 15 10 5 0 01 2 34 5 drain source voltage, v ds (v) drain current, i d (a) on-resign characteristics on-resistance, r ds(on) (m ) source current, i s (a) gate source voltage, v gs (v) capacitance (pf)
UD4614 power mosfet unisonic technologies co., ltd 6 of 9 www.unisonic.com.tw qw-r502-147.b ? typical characteristics(cont.) t j(max) =150 t a =25 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) single pulse power rating junction- to-ambient 0.1 0.1 1 10 100 drain source voltage, v ds (v) 1.0 10.0 100.0 drain current, i d (a) maximum forward biased safe operating area r ds (on) limited 10 s 100 s 1ms 10ms 0.1s 1s 10s dc t j(max) =150 t a =25 normalized transient thermal resistance,z ja v gs =4.5v v gs =10v 50 40 30 20 0 51015 20 drain current, i d (a) on-resistance, r ds(on) (m ) on-resistance vs. drain current and gate voltage
UD4614 power mosfet unisonic technologies co., ltd 7 of 9 www.unisonic.com.tw qw-r502-147.b ? typical characteristics(cont.) p-channel drain current, -i d (a) drain current, -i d (a) 125 25 0.0 0.2 0.1 0.6 0.8 1.0 source drain voltage, -v sd (v) source current, -i s (a) body-diode characteristics 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 1.0e-06 i d =-5a 125 25 160 140 120 100 80 60 40 20 23 4 5678 910 gate source voltage, -v gs (v) on-resistance, r ds(on) (m ) on-resistance vs. gate-source voltage v ds =-20v i d =-5a c iss c oss c rss 40 30 20 10 0 0 200 400 600 800 1000 capacitance (pf) drain source voltage, -v ds (v) capacitance characteristics 10 8 6 4 2 0 gate source voltage, -v gs (v) 05 10 15 gate charge, -q g (nc) gate-charge characteristics
UD4614 power mosfet unisonic technologies co., ltd 8 of 9 www.unisonic.com.tw qw-r502-147.b ? typical characteristics(cont.) power (w) d r a i n c u r r e n t , - i d ( a ) normalized transient thermal resistance,z ja v gs =-10v v gs =-4.5v 60 55 50 45 40 35 30 0246810 drain current, -i d (a) on-resistance vs. drain current and gate voltage
UD4614 power mosfet unisonic technologies co., ltd 9 of 9 www.unisonic.com.tw qw-r502-147.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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