, low gate charge and symbol v ds v gs i dm t j , t stg symbol ty p max 64 83 89 120 r jl 53 70 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 6.3 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.5 1.08 -55 to 150 t a =70c i d 8 AO8804 features v ds (v) = 20v i d = 8a r ds(on) < 13m ? (v gs = 10v) r ds(on) < 14m ? (v gs = 4.5v) r ds(on) < 19m ? (v gs = 2.5v) r ds(on) < 27m ? (v gs = 1.8v) esd rating: 2000v hbm the AO8804 uses advanced trench technology to provide excellent r ds(on) operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common- drain configuration. g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 general description common-drain dual n-channel enhancement mode field effect transistor www.freescale.net.cn 1 / 6
AO8804 symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 30 a 10 13 t j =125c 13.3 16 11.5 14 m ? 15.4 19 m ? 22.2 27 m ? g fs 36 s v sd 0.73 1 v i s 2.4 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 ? q g 17.9 nc q gs 1.5 nc q gd 4.7 nc t d(on) 2.5 ns t r 7.2 ns t d(off) 49 ns t f 10.8 ns t rr 20.2 ns q rr 8nc gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =4.5v, v ds =10v, i d =8a gate source charge gate drain charge maximum body-diode continuous current input capacitance output capacitance r ds(on) i s =1a,v gs =0v dynamic parameters v gs =0v, v ds =10v, f=1mhz zero gate voltage drain current v gs =1.8v, i d =3a forward transconductance diode forward voltage v ds =5v, i d =8a v ds =v gs i d =250 a v ds =16v, v gs =0v v ds =0v, v gs =10v v gs =2.5v, i d =4a m ? electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 a, v gs =0v i dss a v gs =4.5v, v ds =5v v gs =10v, i d =8a gate-body leakage current static drain-source on-resistance v gs =4.5v, i d =5a gate-source breakdown voltage v ds =0v, i g =250ua gate threshold voltage body diode reverse recovery time body diode reverse recovery charge i f =8a, di/dt=100a/ s reverse transfer capacitance turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.2 ? , r gen =3 ? turn-on delaytime i f =8a, di/dt=100a/ s switching parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 6
AO8804 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v v gs =2.5v 0 5 10 15 20 25 30 35 40 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =5a v gs =1.8v v gs =1.8v 25c 125c i d =5a www.freescale.net.cn 3 / 6
AO8804 typical electrical and thermal characteristic s 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 1 0 m s 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =10v i d =8a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =83c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s www.freescale.net.cn 4 / 6
tssop-8 package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.10 mm (4 mil) unless otherwise specified 3. coplanarity : 0.10 mm 4. dimension l is measured in gage plane recommended land pattern package marking description note: logo - aos logo 8804 - part number code. f - fab location a - assembly location w - week code. l n - assembly lot code tssop-8 part no. code part no. AO8804 code 8804 unit: mm q 0.002 --- 0.006 a1 0.05 --- 0.15 y q d e1 l e e b c a2 --- 0.10 --- --- 0 8 1.00 --- --- 6.40 bsc 0.60 4.40 0.65 bsc 3.00 2.90 4.30 0.45 0.19 0.09 0.80 3.10 4.50 0.75 1.05 0.20 0.30 --- 0.004 --- 0 --- 8 0.039 0.252 bsc 0.024 0.173 0.0259 (ref) 0.118 0.114 0.169 0.018 0.007 0.004 0.031 --- --- 0.122 0.177 0.030 0.041 0.008 0.012 symbols a nom --- dimensions in millimeters min --- 1.20 max nom dimensions in inches min --- --- 0.047 max f a w l t logo 8 8 0 4 rev. a www.freescale.net.cn 5 / 6
tssop-8 tape and reel data tssop-8 carrier tape tssop-8 reel tssop-8 tape leader / trailer & orientation www.freescale.net.cn 6 / 6
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