inchange semiconductor isc product specification isc silicon npn power transistor BU326A description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min) low collector-emitter saturation voltage- : v ce( sat ) = 1.5v(max.) @ i c = 2.5a applications designed for use in operating in color tv receivers chopper supplies. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 10 v i c collector current-continuous 6 a i cm collector current-peak 8 a i b b base current-continuous 3 a p c collector power dissipation @ t c =25 75 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.33 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU326A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0; l= 25mh 400 v v ce( sat )-1 collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 4a; i b = 1.25a b 3.0 v v be( sat )-1 base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.4 v v be( sat )-2 base-emitter saturation voltage i c = 4a; i b = 1.25a b 1.6 v i ces collector cutoff current v ce = 900v; v be = 0 1.0 ma i ebo emitter cutoff current v eb = 10v; i c = 0 10 ma h fe dc current gain i c = 1a; v ce = 5v 25 f t current-gain?bandwidth product i c = 0.2a; v ce = 10v, f= 1.0mhz 4 mhz switching times t on turn-on time 0.5 s t stg storage time 3.5 s t f fall time i c = 2.5a; i b1 = 0.5a; i b2 = -1a; v cc = 250v 0.5 s isc website www.iscsemi.cn 2
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