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FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 1 may 2012 FJP2160D esbc tm rated npn silicon transistor applications ? high voltage and high speed power switch application ? emitter-switched bipolar/mosfet cascode application (esbc tm ) ? smart meter, smart breakers, hv industrial power supplies ? motor driver and ignition driver esbc features (fdc655 mosfet) ? low equivalent on resistance ? very fast switch : 150khz ? squared rbsoa : up to 1600volts ? avalanche rated ? low driving capacitance, no miller capacitance ( typ 12pf cap @ 200volts) ? low switching losses ? reliable hv switch : no false triggering due to high dv/dt transients. ordering information * figure of merit ** other fairchild mosfets can be used in this esbc application. v cs(on) i c equiv r cs(on) 0.131 v 0.5 a 0.261 ? part number marking packag e packing method remarks FJP2160Dtu j2160d to-220 tube (1) (2) (3) b c e figure 2. internal schematic diagram c b g s fdc655 FJP2160D figure 3. esbc configuration** figure 1. pin configuration 1.base 2.collector 3.emitter 1 to-220 description the FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an esbc tm configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. the power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses. the esbc tm switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. the esbc tm mosfet is a low-volt age, low-cost, surface mount device that combines low-input capacitance and fast switching, the esbc tm configuration further mini- mizes the required driving pow er because it does not have miller capacitance. the FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safe- operating-area (rbsoa) and rugged design. the device is avalanche rated and has no parasitic transistors so is not prone to static dv/dt failures. tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 2 absolute maximum ratings * t a = 25c unless otherwise noted * pulse test: pulse width = 20 s, duty cycle 10% thermal characteristics t a = 25c unless otherwise note electrical characteristics t a = 25c unless otherwise noted symbol parameter value units v cbo collector-base voltage 1600 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 12 v i c collector current 2 a i cp collector current (pulse) 3 a i b base current 1 a i bp base current (pulse) 2 a p d power dissipation (t c = 25 c) 100 w t j operating and junction temperature range - 55 ~ +125 c t stg storage temperature range - 65 ~ +150 c eas avalanche energy (t j = 25 c, 8mh) 3.5 mj symbol parameter max. units r jc thermal resistance, junction to case 1.25 c/w r ja thermal resistance, junction to ambient 80 c/w symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =0.5ma, i e =0 1600 1689 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 800 870 v bv ebo emitter-base breakdown voltage i e =0.5ma, i c =0 12 14.8 v i ces collector cut-off current v ces =1600v, i e =0 0.01 100 a i ceo collector cut-off current v ce =800v, v be =0 0.01 100 a i ebo emitter cut-off current v eb =12v, i c =0 0.05 500 a h fe dc current gain v ce =3v, i c =0.4a 20 29 35 v ce =10v, i c =5ma 20 43 v ce (sat) collector-emitter saturation voltage i c =0.25a, i b =0.05a 0.16 0.45 v i c =0.5a, i b =0.167a 0.12 0.35 v i c =1a, i b =0.33a 0.25 0.75 v v be (sat) base-emitter saturation voltage i c =500ma, i b =50ma 0.74 1.2 v i c =2a, i b =0.4a 0.85 1.2 v c ib input capacitance v eb =10v, i c =0, f=1mhz 745 1000 pf c ob output capacitance v cb =200v, i e =0, f=1mhz 15 pf f t current gain bandwidth product i c =0.1a,v ce =10v 5 mhz v f diode forward voltage i f =0.4a 0.76 1.2 v i f =1a 0.83 1.5 v tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 3 esbc configured electr ical characteristics * t a = 25c unless otherwise noted * used typical fdc655 mosfet values in table. co uld vary if other fairchild mosfets were used. symbol parameter test condition min. typ. max. units f t current gain bandwidth product i c =0.1a,v ce =10v 25 mhz it f inductive current fall time v gs =10v, r g =47 , v clamp =500v, t p = 3.1 s, i c =0.3a, i b =0.03a, l c =1mh, srf=480khz 137 ns t s inductive storage time 350 ns vt f inductive voltage fall time 120 ns vt r inductive voltage rise time 100 ns t c inductive crossover time 137 ns it f inductive current fall time v gs =10v, r g =47 , v clamp =500v, t p = 10 s, i c =1a, i b =0.2a, l c =1mh, srf=480khz 35 ns t s inductive storage time 980 ns vt f inductive voltage fall time 30 ns vt r inductive voltage rise time 195 ns t c inductive crossover time 210 ns v csw maximum collector source volt- age at turn-off without snubber h fe =5, i c =2a 1600 v i gs(os) gate-source leakage current v gs =20v 1.0 na v cs(on) collector-source on voltage v gs =10v, i c =2a, i b =0.67a, h fe =3 v gs =10v, i c =1a, i b =0.33a, h fe =3 v gs =10v, i c =0.5a,i b =0.17a,h fe =3 v gs =10v, i c =0.3a, i b =0.06a, h fe =5 2.21 0.321 0.131 0.166 v v v v v gs(th) gate threshold voltage v bs =v gs, i b =250 a 1.9 v c iss input capacitance (v gs =v cb =0) v cs =25v, f=1mhz 470 pf q gs(tot) gate-source change v cb =0 v gs =10v, i c =8a, v cs =25v 9nc r ds(on) static drain to source on resistance v gs =10v, i d =6.3a v gs =4.5v, i d =5.5a v gs =10v, i d =6.3a, t j =125c 21 26 30 m m m tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 4 typical performan ce characteristics figure 4. static characteristic figure 5. dc current gain figure 6. collector-emi tter saturation voltage h fe =3 figure 7. collector-emi tter saturation voltage h fe =5 figure 8. collector-emi tter saturation voltage h fe =10 figure 9. collector-emi tter saturation voltage h fe =20 01234567 0 1 2 3 1a 800ma 900ma 700ma 600ma 500ma 400ma 300ma i b =100ma 200ma i c [a], collector current v ce [v], collector emitter voltage 1 10 100 1000 1 10 100 v ce =10v t j =25 o c t j =125 o c h fe , dc current gain i c [ma], collector current 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 100 t a = 25 o c t a = 125 o c i c = 3 i b t a = - 25 o c v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 5 i b v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 10 i b v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 20 i b v ce (sat) [v], saturation voltage i c [a], collector current tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 5 typical performan ce characteristics (continued) figure 10. typical collector satura tion voltage figure 11. capacitance figure 12. inductive load collector current fall-time (t f ) figure 13. inductive load collector current storage time (t stg ) figure 14. inductive load collector voltage fall-time (t f ) figure 15. inductive load collector voltage rise-time (t r ) 1 10 100 1k 0 1 2 t j =25 o c 2.0a 3.0a 1.0a 0.4a i c =0.2a v ce [v], voltage i b [ma], base current 1 10 100 1000 10000 1 10 100 1000 c ob (emitter open) c ob (emitter grounded) capacitance [pf] collector-base voltage[v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 225 250 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [us] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 200 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 60 80 100 120 140 160 180 200 220 240 260 280 300 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 6 typical performan ce characteristics (continued) figure 16. inductive load collector current/voltage crossover (t c ) figure 17. bjt reverse bias safe operating area figure 18. esbc rbsoa figure 19. crossover forward bias safe operating area figure 20. power derating 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 80 100 120 140 160 180 200 220 240 260 280 300 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0 200 400 600 800 1000 1200 1400 1600 1800 0 1 2 3 v dd = +/-50v, r load = 500k v be (off) = 5v i c [a], collector current v ce [v], collector-emitter voltage 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 v dd = +/-50v, r load = 500kohms h fe = 4 i c [a], collector current v ce [v], collector-emitter voltage 0 500 1000 1500 2000 0.1 1 10 t c = 25 o c single 80us pulse i c [ma], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 p d [w], power dissipation t c [ o c], case temperature tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 7 test circuits figure 23. ft measurement figure 24. fbsoa v ce a }?? st???? p j r\g} k|{ a }?? st???? p j k|{ }?? a p i figure 21. test circuit for inductive load and reverse bias safe operating figure 22. energy rating test circuit tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 8 test circuits (continued) functional test waveforms figure 25. simplified satura ted switch driver circui t figure 26. crossover time measurement figure 27. saturated switching waveform 90% vce 10% vce 90% ic 10% ic tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 9 functional test waveforms (continued) f i g u r e 2 8 . st o r a g e ti m e - c o m m o n e m i t t e r base turn off (ib2) to ic fall-time f i g u r e 2 9 . s t o r a g e t i m e - e s b c f e t gate (off) to ic fall-time tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 10 very wide input voltage range supply - 8watt; secreg: 3 cap input; quasi resonant driving esbc switches xy [ z \ ] _ o} }?? v|{ jz mi kl{ z y x x y oxxhnx}t tiyywx\wj{{| xwww?m z\} xwww?m z\} x y z[ \ ^ ` ttz?yy}i yy}? yl ttzkzw^w xu[x[_~z xw?m xww?m y\} mqilyx]wk{t mkj]\\ tw?x]w_i[^xh w]rl[[wh |m[ww^ xu[x[_ zz?m [\w} zz?m [\w} zz?m [\w} [^wr [^wr [^wr [^wr [^wr [^wr x????gy???????gxywro? _~???? ywwtxwww}gkj wuz\hg????? xytx[}???? [}???? y[}gwuzzh q qgt???g?????g??g???????? ttz?xy}j xy}? \l 1 fjp figure 30. very wide input voltage range supply figure 31. vcc derived figure 32. vbias supply derived figure 33. proportional drive fairchild proprietary tm
FJP2160D ? esbctm rated npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJP2160D rev. a0 11 physical dimensions 4.50 0.2 0 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters tm
? fairchild semiconductor corporation www.fairchildsemi.com trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2cool accupower ax-cap * bitsic build it now coreplus corepower crossvolt ctl current transfer logic deuxpeed ? dual cool? ecospark ? efficientmax esbc ? fairchild ? fairchild semiconductor ? fact quiet series fact ? fast ? fastvcore fetbench flashwriter ? * fps f-pfs frfet ? global power resource sm greenbridge green fps green fps e-series g max gto intellimax isoplanar making small speakers sound louder and better? megabuck microcoupler microfet micropak micropak2 millerdrive motionmax motion-spm mwsaver optohit optologic ? optoplanar ? ? powertrench ? powerxs? programmable active droop qfet ? qs quiet series rapidconfigure saving our world, 1mw/w/kw at a time? signalwise smartmax smart start solutions for your success spm ? stealth superfet ? supersot -3 supersot -6 supersot -8 supremos ? syncfet sync-lock? ? * the power franchise ? tinyboost tinybuck tinycalc tinylogic ? tinyopto tinypower tinypwm tinywire transic trifault detect truecurrent ? * p serdes uhc ? ultra frfet unifet vcx visualmax voltageplus xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in the industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselv es and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild's quality standards for handling and storage and provide access to fa irchild's full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropriately addr ess any warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unauthorized sources. fairchild is c ommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors . product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i61

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