amplifiers - low noise - chip 1 1 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC463 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz v10.1010 general description features functional diagram the HMC463 is a gaas mmic phemt low noise agc distributed ampli er die which operates between 2 and 20 ghz. the ampli er provides 14 db of gain, 2.5 db noise gure and 19 dbm of output power at 1 db gain compression while requiring only 60 ma from a +5v supply. an optional gate bias (vgg2) is provided to allow adjustable gain control (agc) of 10 db typical. gain atness is excellent at 0.15 db from 6 - 18 ghz making the HMC463 ideal for ew, ecm and radar applications. the HMC463 ampli- er can easily be integrated into multi-chip-modules (mcms) due to its small size. all data is with the chip in a 50 ohm test xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). gain: 14 db noise figure: 2.5 db @ 10 ghz p1db output power: +19 dbm @ 10 ghz supply voltage: +5v @ 60 ma 50 ohm matched input/output die size: 3.05 x 1.29 x 0.1 mm typical applications the HMC463 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military & space ? test instrumentation ? fiber optics electrical speci cations, t a = +25 c, vdd= 5v, idd= 60 ma* parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 2.0 - 6.0 6.0 - 18.0 18.0 - 20.0 ghz gain 12 15 12 14 12 14 db gain flatness 1.0 0.15 0.15 db gain variation over temperature 0.015 0.025 0.015 0.025 0.015 0.025 db/ c noise figure 3.0 4.0 2.5 3.7 3.5 4.0 db input return loss 12 15 14 db output return loss 11 12 10 db output power for 1 db compression (p1db) 16 19 13 16 11 14 dbm saturated output power (psat) 21 20 19 dbm output third order intercept (ip3) 31 28 26 dbm supply current (idd) (vdd= 5v, vgg1= -0.9v typ.) 60 80 60 80 60 80 ma * adjust vgg1 between -1.5 to -0.5v to achieve idd= 60 ma typical. vgg2: optional gate bias for agc
amplifiers - low noise - chip 1 1 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -30 -20 -10 0 10 20 0 4 8 12 16 20 24 s21 s11 s22 response (db) frequency (ghz) 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c return loss (db) frequency (ghz) -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c reverse isolation (db) frequency (ghz) 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c noise figure (db) frequency (ghz) HMC463 v10.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com p1db vs. temperature psat vs. temperature output ip3 vs. temperature gain, power & noise figure vs. supply voltage @ 10 ghz, fixed vgg1 10 13 16 19 22 25 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c p1db (dbm) frequency (ghz) 10 13 16 19 22 25 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c psat (dbm) frequency (ghz) 20 23 26 29 32 35 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c ip3 (dbm) frequency (ghz) 12 13 14 15 16 17 18 19 20 21 22 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 4.5 4.75 5 5.25 5.5 gain p1db noise figure gain (db), p1db (dbm) noise figure (db) vdd (v) gain, p1db & output ip3 vs. control voltage @ 10 ghz noise figure & supply current vs. control voltage @ 10 ghz 0 4 8 12 16 20 24 28 32 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 gain p1db ip3 gain (db), p1db (dbm), ip3 (dbm) vgg2 (v) 20 30 40 50 60 70 0 1 2 3 4 5 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 idd noise figure idd (ma) noise figure (db) vgg2 (v) HMC463 v10.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com absolute maximum ratings drain bias voltage (vdd) +9 v gate bias voltage (vgg1) -2 to 0 vdc gate bias current (igg1) 2.5 ma gate bias voltage (vgg2)(agc) (vdd -9) vdc to +2 vdc rf input power (rfin)(vdd = +5 v) +18 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 20.6 mw/c above 85 c) 1.85 w thermal resistance (channel to die bottom) 48.6 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c vdd (v) idd (ma) +4.5 58 +5.0 60 +5.5 62 typical supply current vs. vdd gain @ several control voltages -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 22 gain (db) frequency (ghz) vgg 2 = -1.3v vgg 2 = -1.2v vgg 2 = -1.1v vgg 2 = -1.0v vgg 2 = -0.9v vgg 2 = -0.6v vgg 2 = -0.4v vgg 2 = 0v electrostatic sensitive device observe handling precautions HMC463 v10.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC463 v10.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz outline drawing notes: 1. all dimensions in inches [millimeters] 2. no connection required for unlabeled bond pads 3. die thickness is 0.004 (0.100) 4. typical bond pad is 0.004 (0.100) square 5. backside metallization: gold 6. backside metal is ground 7. bond pad metalization: gold 8. overall die size .002 die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - low noise - chip 1 1 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad number function description interface schematic 1 rfin this pad is ac coupled and matched to 50 ohms. 2vgg2 optional gate control if agc is required. leave vgg2 open circuited if agc is not required. 3vdd power supply voltage for the ampli er. external bypass capacitors are required 4 rfout this pad is ac coupled and matched to 50 ohms. 5 vgg1 gate control for ampli er. adjust to achieve idd= 60 ma. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions HMC463 v10.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC463 v10.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz assembly diagram
amplifiers - low noise - chip 1 1 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC463 v10.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
|
