for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 1 hmc463lh250 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz v04.1010 general description features functional diagram the hmc463lh250 is a gaas mmic phemt low noise agc distributed ampli er packaged in a hermetic surface mount package which operates between 2 and 20 ghz. the ampli er provides 13 db of gain, 3 db noise gure and 18 dbm of output power at 1 db gain compression while requiring only 60 ma from a +5v supply. an optional gate bias (vgg2) is provided to allow adjustable gain control (agc) of 8 db typical. gain atness is excellent at 0.5 db from 2 - 14 ghz making the hmc463lh250 ideal for ew, ecm radar, test equipment and high-reliability applications. the hmc463lh250 lna i/os are internally matched to 50 ohms and are internally dc blocked. 50 ohm matched input/output hermetic smt package gain: 14 db noise figure: 2.5 db @ mid-band p1db output power: +18 dbm @ mid-band supply voltage: +5v @ 60ma screening to mil-prf-38535 (class b or s) available typical applications the hmc463lh250 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military ew, ecm & c 3 i ? test instrumentation ? fiber optics electrical speci cations, t a = +25 c, vdd= 5v, vgg2= open, idd= 60 ma* parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 2.0 - 6.0 6.0 - 16.0 16.0 - 20.0 ghz gain 11.5 14.5 9 12 8 11 db gain flatness 0.25 0.5 0.9 db gain variation over temperature 0.010 0.010 0.010 db/ c noise figure 3.5 5.5 2.5 4.5 4 5.5 db input return loss 15 15 9 db output return loss 11 15 7 db output power for 1 db compression (p1db) 16 19 13 18 10 13 dbm saturated output power (psat) 21.5 20.5 19 dbm output third order intercept (ip3) 29 27 24 dbm supply current (idd) (vdd= 5v, vgg1= -0.9v typ.) 60 80 60 80 60 80 ma * adjust vgg1 between -2 to -0v to achieve idd= 60 ma typical.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 2 output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -30 -25 -20 -15 -10 -5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 22 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c noise figure (db) frequency (ghz) hmc463lh250 v04.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 3 p1db vs. temperature psat vs. temperature output ip3 vs. temperature gain, power & noise figure vs. supply voltage @ 10 ghz, fixed vgg1 gain, p1db & output ip3 vs. control voltage @ 10 ghz noise figure & supply current vs. control voltage @ 10 ghz -4 0 4 8 12 16 20 24 28 32 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 gain p1db ip3 gain (db), p1db (dbm), ip3 (dbm) vgg2 (v) 6 8 10 12 14 16 18 20 22 24 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4.5 5 5.5 gain p1db psat nf gain (db), p1db (dbm), psat (dbm) noise figure (db) vdd (v) 20 30 40 50 60 70 80 0 1 2 3 4 5 6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 idd (ma) noise figure (db) vgg2 (v) 14 16 18 20 22 24 26 28 30 32 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c ip3 (dbm) frequency (ghz) 6 10 14 18 22 26 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c psat (dbm) frequency (ghz) 6 10 14 18 22 26 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c p1db (dbm) frequency (ghz) hmc463lh250 v04.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 4 outline drawing absolute maximum ratings notes: 1. package body material: ceramic & kovar 2. lead and ground paddle plating: gold 40-80 microinches. 3. dimensions are in inches [millimeters]. 4. lead spacing tolerance is non-cumulative. 5. pad burr length 0.15mm max. pad burr height 0.25mm max. 6. all ground leads and ground paddle must be soldered to pcb rf ground. drain bias voltage (vdd) +9 v gate bias voltage (vgg1) -2 to 0 vdc gate bias current (igg1) 2.5 ma gate bias voltage (vgg2)(agc) (vdd -9) vdc to +2 vdc rf input power (rfin)(vdd = +5 v) +18 dbm channel temperature 175 c storage temperature -65 to +150 c operating temperature -40 to +85 c vdd (v) idd (ma) +4.5 58 +5.0 60 +5.5 62 typical supply current vs. vdd gain @ several control voltages -14 -10 -6 -2 2 6 10 14 18 0 2 4 6 8 10 12 14 16 18 20 22 vgg2=-1.3 v vgg2=-1.2 v vgg2=-1.1 v vgg2=-1.0 v vgg2=-0.9 v vgg2=-0.8 v vgg2=-0.6 v vgg2=-0.4 v vgg2=-0.2 v vgg2=0 v gain (db) frequency (ghz) electrostatic sensitive device observe handling precautions hmc463lh250 v04.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 5 pin number function description interface schematic 1, 2, 4, 5, 7, 8 , 10 gnd ground paddle must be connected to rf/dc ground. 3rfin this pad is ac coupled and matched to 50 ohms. 6 vgg1 gate control for ampli er. adjust to achieve idd= 60 ma. 9rfout this pad is ac coupled and matched to 50 ohms. 11 vd d power supply voltage for the ampli er. external bypass capacitors are required 12 vgg2 optional gate control if agc is required. leave vgg2 open circuited if agc is not required. pin descriptions hmc463lh250 v04.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 6 evaluation pcb the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 111709 [1] item description j1 - j2 sri k connector j3 - j4 2 mm molex header c1 - c3 100 pf capacitor, 0402 pkg. c4 - c6 1000 pf capacitor, 0603 pkg. c7 - c9 4.7 f capacitor, tantalum u1 hmc463lh250 pcb [2] 111707 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc463lh250 v04.1010 gaas phemt mmic low noise agc amplifier, 2 - 20 ghz
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