super fast recovery diode rf08l6s ? series ? dimensions (unit : mm) ? land size figure (unit : mm) standard fast recovery ? applications general rectification ? features 1)small power mold type. pmds ? structure 2)high switching speed 3)low forward voltage ? construction silicon epitaxial planar ? taping dimensions (unit : mm) ? absolute maximum ratings (tl=25c) symbol limits unit v rm 600 v v r 600 v average rectified forward current io 0.8 a ta=25c tl=100c tj 150 c tstg ? 55 to ? 150 c ? electrical characteristic (tj=25c) symbol min. typ. max. unit i r 0.01 10 a trr 50 70 ns thermal resistance rth(j-l) 23 c/w reverse voltage repetitive peak reverse voltage parameter 20 glass epoxy substrate mounted direct voltage d Q 0.5 conditions a forward current surge peak i fsm 60hz half sin wave, non-repetitive one cycle peak value, tj=25c parameter conditions storage temperature junction temperature reverse recovery time v reverse current 1 1.3 forward voltage v f junction to lead i f =0.5a,i r =1a,irr=0.25i r v r =600v i f =0.8a rohm : pmds jedec : sod-106 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 manufacture date pmds 2.0 4.2 2.0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max 6 6 8 1 1/3 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf08l6s 1 10 100 1000 110100 8.3ms ifsm 1cyc 8.3ms 10 100 1000 110100 t ifsm 0.1 1 10 100 1 10 100 0 5 10 15 20 25 30 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-l) 1m im=10ma i f =100ma 300us time on glass epoxi board forward voltage v f (mv) v f -i f characteristics forward current:i f (a) reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm disresion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics trr dispersion map reverse recovery time:trr(ns) f=1mhz tj=25 v r =600v n=30pcs ave:7.35na electrostatic discharge test esd(kv) esd dispersion map 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave2.70kv ave9.80kv 900 950 1000 1050 1100 ave:999.5mv i f =0.8a tj=25 n=30 p cs 30 35 40 45 50 55 60 i f =0.5a i r =1a irr=0.25*i r tj=25 ave:48.8ns 30 40 50 60 f=1mhz v r =0v tj=25 ave:44.2pf 0 20 40 60 80 ave:49.4a 8.3ms ifsm 1cyc 0.1 1 10 100 1000 10000 0 100 200 300 400 500 600 tj=125 tj=25 tj=150 tj=75 0.001 0.01 0.1 1 10 0 500 1000 1500 2000 tj=125 tj=150 tj=25 tj=75 transient thaermal impedance:rth ( /w) 2/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf08l6s 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0306090120150 d.c. d=0.5 d=0.2 d=0. d=0.0 half sin wave d=0.8 ambient temperature:ta( ) derating curve ? (io-ta) average rectified forward current:io(a) average rectified forward current:io(a) lead temparature:tl( ) derating curve ? (io-tl) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics t tj=150 d=t/t t v r io v r =480v 0 a 0v t tj=150 d=t/t t v r io v r =480v 0 a 0v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 00.511.52 d.c. d=0.5 d=0.2 d=0.1 d=0.0 half sin wave d=0.8 3/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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