f red ultrafa st soft reco ver y diode, 2 x 15 a fe atures ultrafast recovery ultrasoft recovery v er y low i rrm v er y low q rr specified at operating conditi ons designed and qualified for industrial level benef its reduced rfi and emi reduced power loss in diode and switch ing transistor higher frequency operation reduced snubbing reduced parts count descri p t ion pro duct sum mar y v r 600 v v f at 15 a at 25 c i f ( av ) 2 x 15 a t rr ( typical ) 19 ns t j ( maximum ) q rr ( typical ) 80 nc di ( rec ) m / dt ( typical ) 160 a / s i rrm ( typical ) 4.0 a absolu te maxim um ra tings p arameter symbol test condition s v alues units cathod e to anode voltage v r 600 v maximum continuous forw ard current per leg i f 15 a per device 30 single pulse forward current i fsm 150 maximum repetitive forward current i frm 60 maximum pow er dissipation 74 w 29 operating junct ion and storage tempe rature range t j , t stg - 55 to + 150 n-hf a30p a60c n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 1 o f 6 h fa 3 0 p a 6 0 c i s a s t a t e o f t h e a r t c e n t e r t a p u l t r a f a s t r e c o v e r y d i o d e . e m p l o y i n g t h e l a t e s t i n e p i t a x i a l c o n s t r u c t i o n a n d a d v a n c e d p r o c e s s i n g t e c h n i q u e s i t f e a t u r e s a s u p e r b c o m b i n a t i o n o f c h a r a c t e r i s t i c s w h i c h r e s u l t i n p e r f o r m a n c e w h i c h i s u n s u r p a s s e d b y a n y r e c t i f i e r p r e v i o u s l y a v a i l a b l e . w i t h b a s i c r a t i n g s o f 6 0 0 v a n d 1 5 a p e r l e g c o n t i n u o u s c u r r e n t , t h e h fa 3 0 p a 6 0 c i s e s p e c i a l l y w e l l s u i t e d f o r u s e a s t h e c o m p a n i o n d i o d e f o r i g b t s a n d m o s f e t s . i n a d d i t i o n t o u l t r a f a s t r e c o v e r y t i m e , t h e f r e d p r o d u c t l i n e f e a t u r e s e x t r e m e l y l o w v a l u e s o f p e a k r e c o v e r y c u r r e n t ( i ) a n d d o e s n o t e x h i b i t a n y t e n d e n c y t o r r m s n a p - o f f d u r i n g t h e t b p o r t i o n o f r e c o v e r y . t h e f r e d f e a t u r e s c o m b i n e t o o f f e r d e s i g n e r s a r e c t i f i e r w i t h l o w e r n o i s e a n d s i g n i f i c a n t l y l o w e r s w i t c h i n g l o s s e s i n b o t h t h e d i o d e a n d t h e s w i t c h i n g t r a n s i s t o r. t h e s e f r e d a d v a n t a g e s c a n h e l p t o s i g n i f i c a n t l y r e d u c e s n u b b i n g , c o m p o n e n t c o u n t a n d h e a t s i n k s i z e s . t h e f r e d h fa 3 0 p a 6 0 c i s i d e a l l y s u i t e d f o r a p p l i c a t i o n s i n p o w e r c o n v e r s i o n s y s t e m s ( s u c h a s i n v e r t e r s ) , m o t o r d r i v e s , a n d m a n y o t h e r s i m i l a r a p p l i c a t i o n s w h e r e h i g h s p e e d , h i g h e f f i c i e n c y i s n e e d e d . t = 100 oc c t = 100 oc c t = 25 oc c oc common cathode common cathode 2 2 1 3 anode 1 anode 2 t o - 2 4 7 a b 1.7 v p d 150 c w w w . n e l l s e m i . c o m
therma l - mec han ica l spe cif ica tio ns per leg p ar ameter symbol test conditions min . typ . max . units lead temperature t lead 0.063'' from case (1.6 mm ) for 10 s - - 300 junction to case , single leg conduction r thjc - - 1.7 k / w junction to case , both legs conducting - - 0.85 therma l resistance , junction to ambie nt r thja typical socket mount - - 40 thermal resistance , case to heatsin k r thcs mounting surface , flat , smoo th and greased - 0.25 - weight - 6.0 - g - 0.21 - oz . mounting torque 6.0 (5.0) - 12 (10) kgf . cm ( lbf . in ) marking device case style to -247 ab ( jedec ) n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 2 o f 6 n-hf a30p a60c hfa 30 pa 60 c c oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t condition s v - = 30 a i f - - a - - 600 1.40 10 1.0 - 400 pf 25 e lectri cal specif ica t ions ( t j cathode to anode breakdown volta ge v br = 100 a i r maximum forwa rd voltage = 15 a i f = 15 a , t i = 125 oc f j maximum reverse leakage curre nt i rm junction capacitance 1.55 1.7 - - oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t conditions ns - - 42 70 dynami c recove r y charac terist ics perleg ( t j reverse recov ery time i f = 1.0 a, di /dt = -200 a/s, v =30 v, t = 25 c f r j 19 - a - 6.5 4.0 - nc - 220 80 - peak recovery c urrent reverse recov ery charge t rr t rr1 t rr2 i rrm1 i rrm2 q rr1 q rr2 t = 125 oc j t = 125 oc j t = 125 oc j t = 25 oc j t = 25 oc j t = 25 oc j i = 15 a f di /dt = -200 a/s f v = 200 v r - v fm c t v = 2 0 0 v r t = 1 2 5 c , v = v r a t e d j r r v = v r a t e d r r i = 0 . 5 a , i = 1 . 0 a , i = 2 5 0 m a ( r g # 1 c k t ) f r r r 25 - 1.80 units max . typ . min . units max . typ . min . a/ s - 160 250 - dl /dt2 (rec)m t = 125 oc j t = 25 oc j - - nh 12 series inductance l s 5 0 1 0 0 0 - - measured lead to lead 5 mm from pack age body dl /dt1 (rec)m 120 6.0 60 33 10 600 180 1.55 2.0 peak rate of fall of recovery current during t b w w w . n e l l s e m i . c o m
j fig .1 maximum forward voltage drop vs . instantan eous forward curren t ( per leg ) fig .2 typical reverse current vs . reverse voltage ( per leg ) fig .3 typical junction capa citance vs . reverse voltage ( per leg ) fig .4 maximum thermal impedance z thjc characterist ics ( per leg ) 1 10 100 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 f m forw ar d v ol tage d r op - v ( v ) t = 15 0 o c t = 12 5 o c t = 25 o c j j j a 0.01 0.1 1 10 100 1000 1000 0 0 100 200 300 400 500 600 r t = 150 oc j t = 12 5 o c j t = 25 o c j rev erse vol tage - v ( v ) 10 100 0 100 200 300 400 500 600 t = 25 o c j re v er se v ol ta ge - v ( v ) r a 0.01 0. 1 1 10 0. 00001 0. 0001 0. 001 0. 01 0. 1 1 notes : 1. du t y f act or d = t / t 2. peak t = p x z + t 1 2 j d m th jc c p t t d m 1 2 t , re cta ng ula r pul se dura tio n ( se c ) t h e r m a l r e s p o n s e ( z ) 1 t h j c 0.01 0. 02 0. 05 0. 10 0. 20 d = 0. 50 sin g le pulse ( t herm a l respo nse ) n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 3 o f 6 n-hf a30p a60c w w w . n e l l s e m i . c o m
fig .5 typical reverse recovery time vs . di f / dt ( per leg ) fig .6 typical recovery current vs . di f / dt ( per leg ) fig .7 typical stored charge vs . di f / dt ( per leg ) fig .8 typical di ( rec ) m / dt vs . di f / dt ( per leg ) 0 20 40 60 80 100 0 0 0 1 0 0 1 f di / dt - ( a / s ) i = 30 a i = 1 5 a i = 5. 0 a v = 2 0 0 v t = 1 2 5 o c t = 2 5 o c r j j f f f 0 5 10 15 20 25 0 0 0 1 0 0 1 f di / dt - ( a / s ) i = 30 a i = 15 a i = 5. 0 a v = 2 0 0 v t = 1 2 5 o c t = 2 5 o c r j j f f f 0 200 400 600 800 0 0 0 1 0 0 1 f di / dt - ( a / s ) i = 30 a i = 15 a i = 5. 0 a v = 2 0 0 v t = 1 2 5 o c t = 2 5 o c r j j f f f 100 1000 1000 0 0 0 0 1 0 0 1 f di / dt - ( a / s ) i = 30 a i = 1 5 a i = 5. 0 a f f f v = 2 0 0 v t = 1 2 5 c t = 2 5 c r j j n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 4 o f 6 n-hf a30p a60c d l / d t ( a / s ) ( r e c ) m w w w . n e l l s e m i . c o m
fig .9 reverse recovery parameter test circuit irfp 250 d . u . t . l = 70 v r = 200 v 0.01 g d s di f / dt adjust n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 5 o f 6 n-hf a30p a60c fig.10 reve rse recovery waveform and definition s q rr 0.5 i rrm di ( rec ) m / dt 0.75 i rrm i rrm t rr t b t a i f di f / dt 0 (1) (2) (3) (4) (5) (1) di / dt - rate of change of current f through zero crossing (2) i rrm - peak re v erse reco v er y current (3) t - re v erse reco v er y time measured rr from z ero crossing point of negativ e going i to point where a line passing f through 0.75 i rrm and 0.50 i rrm e xtrapolated to zero current . (4) q - area under cur v e defined b y t rr rr and i rrm 2 q = rr (5) di / dt - peak rate of change of ( rec ) m current dur ing t b por tion of t rr t x l r r r r m w w w . n e l l s e m i . c o m
or de ring in forma tion t abl e 1 - fred family 2 - c urrent rating (3 0 = 30 a, 15a x 2 ) 3 - p ackage outline ( pa = to -247, 3 pin s ) 4 - voltage r a t i ng (60 = 600 v ) 5 - configuration ( c = center tap common cathode) device code 3 1 2 n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s h fa 3 0 p a g e 6 o f 6 p a 6 0 c 6 n 6 - nell semiconductors product n-hf a30p a60c - 4 5 w w w . n e l l s e m i . c o m
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