symbol v ds v gs i dm t j , t stg symbol typ max 47.5 62.5 74 110 r jl 37 50 w junction and storage temperature range a p d c 2 1.44 -55 to 150 t a =70c i d 6.9 5.8 35 continuous drain current a maximum units parameter t a =25c t a =70c gate-source voltage drain-source voltage 30 maximum junction-to-ambient a steady-state c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current b power dissipation a t a =25c maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w AO6400 features v ds (v) = 30v i d = 6.9 a r ds(on) < 28m ? (v gs = 10v) r ds(on) < 33m ? (v gs = 4.5v) r ds(on) < 52m ? (v gs = 2.5v) the AO6400 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. g d s g d d s d d 1 2 3 6 5 4 tsop-6 top view general description effect transistor n-channel enhancement mode field www.freescale.net.cn 1 / 6
AO6400 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1.1 1.4 v i d(on) 35 a 22.3 28 t j =125c 31.5 39 26.8 33 m ? 42.8 52 m ? g fs 10 15 s v sd 0.71 1 v i s 3a c iss 823 pf c oss 99 pf c rss 77 pf r g 1.2 ? q g 9.6 nc q gs 1.65 nc q gd 3nc t d(on) 5.5 ns t r 5.1 ns t d(off) 37 ns t f 4.2 ns t rr 16 ns q rr 8.9 nc gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =5a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =5.8a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2.7 ? , r gen =6 ? m ? v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =2.5v, i d =5a v gs =4.5v, v ds =5v v gs =10v, i d =6.9a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 6
AO6400 typical electrical and thermal characteristics 0 5 10 15 20 25 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current an d gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 10 20 30 40 50 60 70 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5 v v gs =10 v i d =5a 25c 125c www.freescale.net.cn 3 / 6
AO6400 typical electrical and thermal characteristics 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0 .1 s 1 s 10s d c r ds(on) limite d t j(max) =150c t a =25c v ds =15v i d =6.9a single pulse d=t on /(t on +t off ) t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t off p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 6
symbols note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.100 mm (4 mil) unless otherwise specified 3. coplanarity : 0.1000 mm 4. dimension l is measured in gage plane 0.50 0.40 b 0.35 5 8 q 1 1 0.95 bsc e1 1.60 e l e 2.60 0.37 d c 2.70 0.10 2.00 1.80 2.80 --- 3.00 --- 2.90 0.13 3.10 0.20 dimensions in millimeters min a1 a2 a 0.00 1.00 1.00 max nom --- 1.10 0.10 1.15 1.25 --- e1 1.90 bsc tsop-6 package data recommended land pattern note: p n - part number code. d - yaer and week code. l n - assembly lot code, fab and assembly location code. d1 ao6401 code AO6400 d0 part no. tsop-6 part no. code package marking description q seating plane gauge plane www.freescale.net.cn 5 / 6
tsop-6 tape and reel data tsop-6 carrier tape tsop-6 reel tsop-6 tape leader / trailer & orientation www.freescale.net.cn 6 / 6
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