850 nm vcsel 1x9 transceiver reliability data this reliability data sheet describes a newly released 850 nm vcsel optical transceiver for multimode gigabit fiber channel, ethernet and general purpose applications. HFBR-5303/53d3 hfbr-5305/53d5 failure rate prediction the demonstrated point mtbf given on this data sheet is on device performance at maximum allowed stress conditions. tem- perature is an alterable stress. the 1. life test the following demonstrated data represents information based upon the high temperature operating life tests on hfbr-5305 transceivers. definition of failure product failure has occurred when the unit fails to respond properly to a dc/ac functional test condi- tion. the functional test condition shall not exceed the absolute maximum data sheet limits for the product. failure rate will have a direct relationship to the life stress. mil- hdbk-217 uses, for this type of product (hybrid packaging), a 0.43 electron volt activation energy which represents the most conser- vative temperature acceleration reported. estimates for typical equipment use temperatures are as follows: ambient point typical point typical 60% 90% 60% 90% temp. performance performance confidence confidence confidence confidence ( c) mtbf fits mtbf mtbf fits fits 75 244,000 4,090 156,700 91,600 6,380 10,900 70 300,000 3,320 192,900 113,000 5,200 8,840 65 372,000 2,680 238,900 140,000 4,200 7,130 60 465,000 2,140 297,700 174,000 3,360 5,710 55 584,000 1,700 373,600 219,000 2,700 4,540 50 740,000 1,350 472,200 278,000 2,120 3,590 45 943,000 1,050 601,100 354,000 1,660 2,810 40 1,210,000 824 771,200 455,000 1,297 2,190 35 1,570,000 636 997,000 590,000 1,003 1,690 30 2,050,000 487 1,301,000 771,000 769 1,290 25 2,700,000 369 1,712,000 1,010,000 590 983 * failures attibuted to mechanical damage to the vcsel die as a result of manual handling during the assembly process. since au gust 1997, vcsel transmitter assembly has been accomplished using an automatic pick and place system. no further failures of this ty pe have been observed. a. demonstrated performance stress test total total no. of demonstrated demonstrated test name conditions device units failed mtbf @ fits @ hours tested units t a = 75 ct a = 75 c high temperature v cc = 5.0 vdc 488,000 99 2* 244,000 C operating life t a = 75 c see note 1. total 488,000 2 244,000 4,098
2 2. mechanical and environmental tests (testing done on a constructional basis) test conditions duration sample size failure (hfbr-5305) temp. cycle -40 c to 100 c, 200 cycles 40 0 15 min. dwell 5 min. transfer 85/85 t a = 85 c, 85% rh, 1000 hours 39 0 biased v cc = +5.25 v. (see note 1) unbiased 121 c, 100% rh, 168 hours 20 0 pressure pot 2 atm. net popcorn test moisture soak: moisture soak: 96 hours; 20 0 t a = 85 c, 85% rh; wave soldering: wave soldering: 3 times 2 sec. on 260 c solder; 5 min. wash in 60 -70 c di water under 40 psi; 20 min. bake at 70 c power cycle, mil-std-883 method 1004, 1000 hours 39 0 temp. cycle & t a = -10 c to 65 c, humidity relative humidity = 95%, power on/off @ 30 min./ 30 min. v cc = 5.25 v (see note 1) ltol t a = -40 c, v cc = +5.25 v 1000 hours 11 0 (see note 1) thermal shock t a = -40 to 100 c, liquid 100 cycles 10 0 to liquid, 5 min. dwell, 10 sec. transfer mechanical mil-std-883, method 11 0 shock 2002b, 1500 g 0.5 ms, 5 times/axis mechanical mil-std-883, method 11 0 vibration 2007a, 20 - 2000 hz, 20 g hand soldering 315 c - 10 sec. 4 0 high temperature t a = 100 c 500 hours 11 0 storage low temperature t a = -40 c 500 hours 11 0 storage solderability mil-std-883, 11 0 method 2003
3 3. electrostatic discharge information (testing done on a constructional basis) test conditions duration sample size failure (hfbr-5305) esd 1 mil-std-883 apply (5)+ then (5)- voltage 6 0 method 3015.4 pulses to each pin & gnd (human body model) at each voltage level. 2000 v max. (class 2) esd 2 eiaj#1988.3.2b, apply (5)+ then (5)- voltage 6 0 version 2, pulses to each pin & gnd c = 200 pf, r = 0 at each voltage level. (machine model) 150 volts max. esd 3 25 kv max. 40 discharges per d.u.t. 6 0 air discharge (10 discharges each at the (same units from (simulation of top, bottom, right and left of esd 1) human body discharge the front of the housing into d.u.t.) while d.u.t. was powered up) esd 4 25 kv max. 40 discharges per d.u.t. 8 0 air discharge (10 discharges each at the (housing partially (simulation of human top, bottom, right and left of covered with body discharge into the front of the housing metal shield) d.u.t.) while d.u.t. was powered up) note 1: both the transmitter and receiver of each transceiver were connected by a loop-back connectored cable in this test and operated in a self-oscillation mode.
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5968-4910e (11/99)
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