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1 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d datasheet subject to change without notice. primary applications product description key features measured performance 17 ? 40 ghz mpa/multiplier ? rf output frequency range: 17 - 40 ghz ? 22 db nominal gain ? 22 dbm nominal output maximum power ? 2x and 3x multiplier function ? bias: vd = 5v, id = 140ma ? package dimensions: 3.0 x 3.0 x 1.17 mm ? point-to-point radio ? ew ? instrumentation ? frequency multiplier the triquint TGA4031-SM is an medium power amplifier and multiplier for wide band for 17 ? 40 ghz applications. the part is designed using triquint?s power phemt production process. the TGA4031-SM provides a nominal 22 db small signal gain with 22 dbm output maximum power. for 2x and 3x multiplier function, TGA4031-SM provides 15 dbm typical output power @ 9 dbm pin. this part is ideally suited for applications such as point-to-point radio, ew, instrumentation and frequency multipliers. evaluation boards are available upon request. lead-free and rohs compliant bias at vd = 5v, id = 140ma and vg = -0.75v (typical) -15 -10 -5 0 5 10 15 20 25 16 20 24 28 32 36 40 frequency (ghz) s21 (db) -25 -20 -15 -10 -5 0 5 10 15 s11 & s22 (db) s21 s11 s22 bias at vd = 5v, id = 140ma and vg = -0.75v (typical)
2 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d table ii recommended operating conditions table i absolute maximum ratings 1/ 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. see bias plan on page 14 for amplifier and 2x multiplier, page 15 for 3x multiplier symbol parameter value notes vd-vg drain to gate voltage range 8v vd drain supply voltage range 6 v vg gate supply voltage range -3 ? 0 v id drain current 400 ma |ig| gate current 1.38 ma pin input continuous wave power 20 dbm symbol parameter value vd drain voltage 5 v id drain current 140 ma vg gate voltage (typical) -0.75 v vd1 drain voltage 1 v vg1 gate voltage -1.1 v
3 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d table iii rf characterization table parameter amplifier 2x multiplier 3x multiplier units rf output frequencies 17 - 40 22 - 38 23 - 31 ghz s21, small signal gain 22 - - db s11, input return loss 10 - - db s22, output return loss 5 5 5 db psat, maximum output power 22 dbm p1db, output power @ 1 db gain compression 18 dbm imd3@ 11 dbm pout/tone 28 dbc output power @ pin = 9 dbm -1 5 1 5 d b m conversion gain - 9 5 db gain temperature coefficient -0.04 db/ o c bias: vd=5v, id= 140ma, vg = -0.75v (typical), t a = 25 c
4 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d table iv power dissipation and thermal properties 1/ for a median life, tm, of 1e+6 hours, power dissipation is limited to pd(max) = (tchannel oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 1.2 w tchannel = 150 oc tm = 1.0e+6 hrs 1/ 2/ thermal resistance, jc vd = 5v id = 140ma pd = 0.7w jc = 66.7 (oc/w) tchannel = 116 oc tm = 2.4e+7 hrs mounting temperature 30 seconds 260 oc max storage temperature -65 to 150 oc
5 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical) this is device s-parameter this is evaluation board s-parameter
6 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical)
7 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical)
8 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical)
9 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical)
10 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d measured 2x multiplier data bias conditions: vd = 5 v, idq = 120 ma, vg1 = -1.1 v, pin = 9 dbm
11 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d measured 3x multiplier data bias conditions: vd = 5 v, vd1 = 1 v, idq = 160 ma, pin = 9 dbm
12 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing this package is lead-free/rohs-compliant. the package base is copper alloy and the plating material on the leads is nipdau. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (maximum 245 c reflow temperature) soldering processes. the tga44031-sm will be marked with the ?4031? designator and a lot code marked below the part designator. the ?yy? represents the last two digits of the year the part was manufactured, the ?ww? is the work week, and the ?xxxxz? is the lot wafer code. pin symbol description 1, 4, 9, 12 gnd internal grounding; must be grounded on pcb 2, 11 n/c no internal connecti on; must be gr ounded on pcb 3 rf in input, matched to 50 ohms 5 vg1 gate 1 voltage. bias network is requir ed; see evaluation boar d on page 14 as an example 6, 8, 13, 15 gnd no internal connection; can be grou nded on pcb or left open 7 vg gate voltage. bias network is required; see evaluation board on page 14 as an example 10 rf out output, matched to 50 ohms 14 vd drain voltage. bias network is requir ed; see evaluation board on page 14 as an example 16 vd1 drain 1 voltage. bias network is requir ed; see evaluation boar d on page 14 as an example 17 gnd backside paddle. multiple vias should be employ ed to minimize inductance and thermal resistance. 17 rf out rf in vg vg1 vd vd1 12 8 5 13 16 pin 1 4 gnd 9 top view bottom view
13 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing (cont) units: millimeters
14 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d 0402 0.01 uf capacitors board material is 8 mil rogers ro4003 evaluation board
15 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d recommended power supply connection diagram amplifier & 2x multiplier vd vg vd vg vg1 amplifier set vd = 5.0v vary (vg + vg1) to achieve id = 140ma 2x multiplier set vd = 5.0v set vg1 = -1.1v vary vg to achieve id = 120ma bias procedure powering up: set vg (starting from 0v) to ?1.5v increase vd (starting from 0v) to desired voltage 5v make vg more positive, ending up at approx ?0.75v. id ~140ma. apply rf (max input level +20dbm). powering down: remove rf reduce vd to 0v set vg to -1.5v.
16 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d recommended power supply connection diagram 3x multiplier vd vg vd1 3x multiplier set vd = 5.0v set vd1 = 1.0v vary (vg + vg1) to achieve (id + id1) = 160ma
17 TGA4031-SM triquint semiconductor: www. triquint.c om (972)994-8465 fax (972)994-8504 info-mmw@tqs.com april 2012 ? rev d ordering information part package style TGA4031-SM 3x3 qfn recommended surface mount package assembly proper esd precautions must be followed while handling packages. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste c an be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. solder attach process requires the use of no clean flux. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec

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