quantum ? dual-band gsm/gprs sp4t transmit module TQM6M4068 applications functional block diagram ? gsm/gprs handsets and modems ? gprs class 12 compatible product features ? ultra compact size ? 5.0x6.0x1.0mm. ? high system efficiency ? gsm850/900 48 to 47% , dcs/pcs 44 to 43% ? integrated power control ? integrated sp4t control and phemt switch ? free choice of rx ports for band selection ? integrated low pass tx harmonics filter ? positive supply voltage 3.0 to 4.5 v. ? 50 ohms input and output impedances. ? cmos compatible module control inputs. ? high-reliability ingap hbt technology ? ruggedness 20:1 ? 260c rohs compliant sp4t lb logic & power control hb lb_in vbs2 tx_en vramp vbs1 hb_in ant vbatt 1 3 4 5 7 10 17 esd nc 2 nc 8 nc 9 nc 6 16 gnd 15 14 13 12 11 rx2 rx1 nc nc general description pin out & assignments pin# pin name function 1 lb_in gsm 850/900 rf input 2 nc n ot connecte d 3 v bs2 digital control signal 4 tx_en digital control signal 5 v ramp dac control signal 6 nc n ot connecte d 7 v bs1 digital control signal 8 nc n ot connecte d 9 nc n ot connecte d 10 hb_in dcs1800/pcs1900 rf input 11 v batt battery supply voltage 12 rx1 rx1 output 13 rx2 rx2 output 14 nc n ot connecte d 15 nc n ot connecte d 16 gnd ground 17 ant antenna port 18 gnd ground the advanced dual-band (broadband tx) transmit modul e designed for gsm850/900/dcs/pcs mobile handse t applications provides full rf transmit functionality in a size o f only 30 mm 2 . the gsm850/900 and dcs/pcs power amplifie r b locks including power control are combined with a lo w insertion loss dual- b and phemt switch, tx harmonic s filtering, integrated switch decoder, two receive ports, and es d protection. this architecture elim inates the need for any pa-to- switch design effort for phone designers. both rx ports ar e frequency independent and allow flexible routing to th e transceiver. fabricated in high-reliability ingap hbt /phem t technology, the module supports gprs class 12 operation an d p rovides 50 ohms input and output impedances at all rf inpu t and output ports. the module control inputs are cmos compatible and have no need for an external referenc e voltage. with excellent efficiency performance in each band, the power amplifier and switch module contributes to overal l talk-time targets in next generation mobile handset designs. advanced data sheet: rev d 09/29/11 - 1 of 18 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ?
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