2006-12-04 rev.1.3 page 1 bsd 223p optimos ? ? ? ? -p small-signal-transistor product summary v ds -20 v r ds ( on ) 1.2 ? i d -0.39 a feature ? dual p-channel ? enhancement mode ? super logic level (2.5 v rated) ? 150c operating temperature ? avalanche rated ? d v /d t rated pg-sot-363 vps05604 6 3 1 5 4 2 gate pin 2,5 drain pin 6,3 source pin 1,4 mosfet1: 1,2,6 mosfet2: 3,4,5 marking x1s type package tape & reel bsd 223p pg-sot-363 l6327: 3000pcs/r maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d -0.39 -0.31 a pulsed drain current t a =25c i d puls -1.56 avalanche energy, single pulse i d =-0.39 a , v dd =-10v, r gs =25 ? e as 1.4 mj reverse diode d v /d t i s =-0.39a, v ds =-16v, d i /d t =200a/s, t jmax =150c d v /d t -6 kv/s gate source voltage v gs 12 v power dissipation t a =25c p tot 0.25 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56
2006-12-04 rev.1.3 page 2 bsd 223p thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point r thjs - - 180 k/w thermal resistance, junction - ambient, leaded r thj a - - 500 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =-250a v (br)dss -20 - - v gate threshold voltage, v gs = v ds i d =-1.5a v gs(th) -0.6 -0.9 -1.2 zero gate voltage drain current v ds =-20v, v gs =0, t j =25c v ds =-20v, v gs =0, t j =150c i dss - - -0.1 -10 -1 -100 a gate-source leakage current v gs =-12v, v ds =0 i gss - -10 -100 na drain-source on-state resistance v gs =-2.5v, i d =-0.29a r ds(on) - 1.27 2.1 drain-source on-state resistance v gs =-4.5, i d =-0.39a r ds(on) - 0.7 1.2
2006-12-04 rev.1.3 page 3 bsd 223p electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max i d =-0.31a 0.35 0.7 - s input capacitance c iss v gs =0, v ds =-15v, f =1mhz - 45 56 pf output capacitance c oss - 21 26 reverse transfer capacitance c rss - 17 22 turn-on delay time t d ( on ) v dd =-10v, v gs =-4.5v, i d =-0.39a, r g =6 - 3.8 5.7 ns rise time t r - 5 7.5 turn-off delay time t d ( off ) - 5.1 7.6 fall time t f - 3.2 4.8 gate charge characteristics gate to source charge q g s v dd =-10v, i d =-0.39a - -0.04 -0.05 nc gate to drain charge q g d - -0.4 -0.5 gate charge total q g v dd =-10v, i d =-0.39a, v gs =0 to -4.5v - -0.5 -0.62 gate plateau voltage v (p lateau ) v dd =-10v, i d =-0.39a - -2.2 -2.7 v reverse diode inverse diode continuous forward current i s t a =25c - - -0.39 a inv. diode direct current, pulse d i sm - - -1.56 inverse diode forward voltage v sd v gs =0, i f =-0.39 - -1 -1.33 v reverse recovery time t rr v r =-10v, | i f | = | l d |, d i f /d t =100a/s - 7.6 9.5 ns reverse recovery charge q rr - 1.1 1.4 nc
2006-12-04 rev.1.3 page 4 bsd 223p 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.22 0.24 w 0.28 bsd 223p p tot 2 drain current i d = f ( t a ) parameter: | v gs | 4.5 v 0 20 40 60 80 100 120 c 160 t a 0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 -0.36 a -0.42 bsd 223p i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 -10 -1 -10 0 -10 1 -10 a bsd 223p i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 390.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 k/w bsd 223p z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2006-12-04 rev.1.3 page 5 bsd 223p 5 typ. output characteristic i d = f ( v ds ) parameter: t j =25c 0 0.3 0.6 0.9 v 1.5 - v ds 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 2.2v 2.5v 3v 4v 4.5v 6v 7v 8v 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 0 0.5 1 1.5 2 2.5 3 4 r ds(on) 2.2v 2.5v 3v 4v 4.5v 6v 7v 8v 10v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 2 x | i d | x r ds(on)max parameter: t j = 25 c 0 0.5 1 1.5 2 v 3 - v gs 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 s 1.1 g fs
2006-12-04 rev.1.3 page 6 bsd 223p 9 drain-source on-resistance r ds(on) = f( t j ) parameter: i d = -0.39 a, v gs = -4.5 v -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.6 r ds(on) typ. 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 1.2 v 1.6 - v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz 0 2 4 6 8 10 12 v 15 - v ds 1 10 2 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 v -3 v sd -2 -10 -1 -10 0 -10 1 -10 a bsd 223p i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2006-12-04 rev.1.3 page 7 bsd 223p 13 typ. avalanche energy e as = f ( t j ), par.: i d = -0.39 a v dd = -10 v, r gs = 25 20 40 60 80 100 120 c 160 t j 0 0.2 0.4 0.6 0.8 1 mj 1.4 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = -0.39 a pulsed; t j = 25 c 0 0.2 0.4 0.6 0.8 1 nc 1.3 |q gate | 0 -2 -4 -6 -8 -10 -12 v -16 bsd 223p v gs 20% 50% 80% 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 v -24.5 bsd 223p v (br)dss
2006-12-04 rev.1.3 page 8 bsd 223p published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
