SSPS7332N 17 a , 30 v , r ds(on) 13.5 m ? n-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. b e f g g a e b d c d rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provi de low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe dfn3x3-8pp saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telep hones. package information package mpq leader size dfn3x3-8pp 3k 13 inch maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 1 t a =25c i d 17 a t a =70c 11 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s 2.3 a total power dissipation 1 t a =25c p d 3.5 w t a =70c 2.0 w operating junction & storage temperature range t j , t stg -55~150 c thermal resistance ratings thermal resistance junction-case (max.) 1 t Q 5 sec r jc 25 c / w thermal resistance junction-ambient (max.) 1 t Q 5 sec r ja 50 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. dfn3x3-8pp ref. millimeter ref. millimeter min. max. min. max. a 0.70 0.90 0 12 b 3.00bsc b 0.20 0.40 c 0.10 0.25 d 0.65bsc d 1.80 2.3 e 3.00bsc e 3.2bsc g 0.70(typ.) f 0.01 0.02 g 2.35bsc top view
SSPS7332N 17 a , 30 v , r ds(on) 13.5 m ? n-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =24v, v gs =0 - - 25 v ds =24v, v gs =0, t j =55c on-state drain current 1 i d(on) 20 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 13.5 m v gs =10v, i d =10a - - 20 v gs =4.5v, i d =8a forward transconductance 1 g fs - 40 - s v ds =15v, i d =10a diode forward voltage v sd - 0.7 - v i s =2.3a, v gs =0 dynamic 2 total gate charge q g - 12.5 - nc v ds =15v v gs =4.5v i d =10a gate-source charge q gs - 2.6 - gate-drain charge q gd - 4.6 - turn-on delay time t d(on) - 20 - ns v dd =25v i d =1a v gen =10v r l =25 rise time t r - 9 - turn-off delay time t d(off) - 70 - fall time t f - 20 - notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSPS7332N 17 a , 30 v , r ds(on) 13.5 m ? n-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
SSPS7332N 17 a , 30 v , r ds(on) 13.5 m ? n-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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