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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1563 description collector-emitter breakdown voltage- : v (br)ceo = 120v (min) wide area of safe operation complement to type 2sb1086 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5.0 v i c collector current-continuous 1.5 a i cm collector current-peak 3 a total power dissipation @ t c =25 10 p c total power dissipation @ t a =25 1.2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1563 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 120 v v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 120 v v (br)ebo emitter-base breakdown voltage i e = 50 a; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.1a b 2.0 v v be (sat) base-emitter saturation voltage i c = 1a; i b = 0.1a b 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 4v; i c = 0 1.0 a h fe dc current gain i c = 0.1a; v ce = 5v 56 390 f t current-gain?bandwidth product i c = 0.1a; v ce = 5v 80 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 20 pf ? h fe classifications n p q r 56-120 82-180 120-270 180-390 isc website www.iscsemi.cn 2 |
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