document number: 94056 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 25-jul-08 1 hexfred ? ultrafast soft recovery diode, 2 x 8 a HFA16PA60Cpbf vishay high power products features ? ultrafast recovery ? ultrasoft recovery ? very low i rrm ? very low q rr ? specified at operating conditions ? lead (pb)-free ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description HFA16PA60C is a state of t he art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techni ques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 600 v and 8 a per leg continuous current, the HFA16PA60C is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to ?snap-off? during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfred HFA16PA60C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary v r 600 v v f at 8 a at 25 c 1.7 v i f(av) 2 x 8 a t rr (typical) 18 ns t j (maximum) 150 c q rr 65 nc di (rec)m /dt 240 a/s to-247ac base common cathode common cathode 2 2 13 anode 1 anode 2 a v aila b le p b -free rohs* compliant absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current per leg i f t c = 100 c 8 a per device 16 single pulse forward current i fsm 60 maximum repetitive forward current i frm 24 maximum power dissipation p d t c = 25 c 36 w t c = 100 c 14 operating junction and storage temperature range t j , t stg - 55 to + 150 c * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94056 2 revision: 25-jul-08 HFA16PA60Cpbf vishay high power products hexfred ? ultrafast soft recovery diode, 2 x 8 a electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 8.0 a see fig. 1 -1.41.7 i f = 16 a - 1.7 2.1 i f = 8.0 a, t j = 125 c - 1.4 1.7 maximum reverse leakage current i rm v r = v r rated see fig. 2 -0.35.0 a t j = 125 c, v r = 0.8 x v r rated - 100 500 junction capacitance c t v r = 200 v see fig. 3 - 10 25 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics per leg (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time see fig. 5, 6 and 16 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 18 - ns t rr1 t j = 25 c i f = 8.0 a di f /dt = 200 a/s v r = 200 v -3755 t rr2 t j = 125 c - 55 90 peak recovery current see fig. 7 and 8 i rrm1 t j = 25 c - 3.5 5.0 a i rrm2 t j = 125 c - 4.5 8.0 reverse recovery charge see fig. 9 and 10 q rr1 t j = 25 c - 65 138 nc q rr2 t j = 125 c - 124 360 peak rate of fall recovery current during t b see fig. 11 and 12 di (rec)m /dt1 t j = 25 c - 240 - a/s di (rec)m /dt2 t j = 125 c - 210 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c junction to case, single leg conducting r thjc --3.5 k/w junction to case, both leg conducting - - 1.75 thermal resistance, junction to ambient r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to -247ac (jedec) HFA16PA60C
document number: 94056 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 25-jul-08 3 HFA16PA60Cpbf hexfred ? ultrafast soft recovery diode, 2 x 8 a vishay high power products fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 0.1 1 10 100 0.4 0. 8 1.2 1.6 2.0 2.4 2. 8 3.2 fm for w ard v oltage drop - v ( v ) t = 150c t = 125c t = 25c j j j a 0.001 0.01 0.1 1 10 100 1000 0 100 200 300 400 500 600 r re v erse v oltage - v ( v ) t = 150c t = 125c t = 25c j j j 1 10 100 1 10 100 1000 t = 25c j re v erse v oltage - v ( v ) r a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 n otes: 1. d u ty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectang u lar p u lse d u ration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 si n gle pulse (thermal respo n se)
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94056 4 revision: 25-jul-08 HFA16PA60Cpbf vishay high power products hexfred ? ultrafast soft recovery diode, 2 x 8 a fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) 0 20 40 60 80 0 0 0 1 0 0 1 f di /dt - (a/s) trr - (ns) f i = 8.0a i = 16a f f i = 4.0a f v = 200v t = 125c t = 25c r j j 0 4 8 12 16 20 0 0 0 1 0 0 1 f di /dt - (a/s) i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f i = 16a f f 0 100 200 300 400 500 0 0 0 1 0 0 1 f di /dt - (a/s) v = 200v t = 125c t = 25c r j j i = 16a i = 8.0a i = 4.0a f f f 100 1000 10000 0 0 0 1 0 0 1 f di /dt - (a/s) v = 200v t = 125c t = 25c r j j i = 16a i = 8.0a i = 4.0a f f f
document number: 94056 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 25-jul-08 5 HFA16PA60Cpbf hexfred ? ultrafast soft recovery diode, 2 x 8 a vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adj u st q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of c u rrent thro u gh zero crossing (2) i rrm - peak re v erse reco v ery c u rrent (3) t rr - re v erse reco v ery time meas u red from zero crossing point of negati v e going i f to point w here a line passing thro u gh 0.75 i rrm and 0.50 i rrm extrapolated to zero c u rrent. (4) q rr - area u nder c u r v e defined b y t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of c u rrent d u ring t b portion of t rr
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94056 6 revision: 25-jul-08 HFA16PA60Cpbf vishay high power products hexfred ? ultrafast soft recovery diode, 2 x 8 a ordering information table 1 - hexfred ? family 2 - process designator: a = subs. elec. irrad. b = subs. platinum 3 - current rating (16 = 16 a) 4 - package outline (pa = to-247, 3 pins) 5 - voltage rating (60 = 600 v) 6 - configuration (c = center tap common cathode) device code 5 13 24 67 hf a 16 pa 60 c pbf 7 - none = standard production pbf = lead (pb)-free links to related documents dimensions http://www.vishay.com/doc?95223 part marking information http://www.vishay.com/doc?95226
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