tm ?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com may 2012 ffpf08s60st rev. c0 ffpf08s60st ffpf08s60st features ? high speed switching, t rr < 30ns @ i f = 8a ? high reverse voltage and high reliability ? rohs component applications ? general purpose ? switching mode power supply ? boost diode in continuous mode power factor corrections ? power switching circuits 8a, 600v stealth tm ii rectifier the ffpf08s60st is stealth tm ii rectifier with soft recovery characteristics. it is silicon nitride passivated ion-implanted epi- taxial planar construction. this device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions. their low stored charge and hyperfast soft recovery mini- mize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. pin assignments absolute maximum ratings thermal characteristics package marking and ordering 1. cathode 2. anode to-220f-2l 1 1. cathode 2. anode 2 symbol parameter value units v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 95 c8a i fsm non-repetitive peak surge current 60hz single half-sine wave 80 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max units r jc maximum thermal resistance, junction to case 3.4 c/w device marking device package reel size tape width quantity f08s60st ffpf08s60sttu to-220f-2l - - 50 t c = 25c unless otherwise noted information stealth ii rectifier tm
2 www.fairchildsemi.com ffpf08s60st rev. c0 ffpf08s60st electrical characteristics t c = 25c unless otherwise noted notes: 1. pulse : test pulse width = 300 s, duty cycle = 2% test circuit and waveforms parameter conditions min. typ. max units v fm 1 i f = 8a i f = 8a t c = 25 c t c = 125 c - - 2.1 1.6 2.6 - v v i rm 1 v r = 600v v r = 600v t c = 25 c t c = 125 c - - - - 100 500 a a t rr i f =1a, di/dt = 100a/ s, v r = 30v t c = 25 c- - 25 ns trr irr s factor q rr i f =8a, di/dt = 200a/ s, v r = 390v t c = 25 c- - - - 19 2.2 0.6 21 30 - - - ns a nc trr irr s factor q rr i f =8a, di/dt = 200a/ s, v r = 390v t c = 125 c- - - - 58 4.3 1.3 125 - - - - ns a nc w avl avalanche energy (l = 40mh) 20 - - mj
3 www.fairchildsemi.com ffpf08s60st rev. c0 ffpf08s60st typical performance characteristics t c = 25c unless otherwise noted figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.1 1 10 100 t c =75 o c t c =25 o c fprward current, i f [a] forward voltage, v f [v] t c =125 o c 0 100 200 300 400 500 600 1e-9 1e-8 1e-7 1e-6 1e-5 1e-4 t c = 25 o c t c = 75 o c reverse current, i r [a] reverse voltage, v r [v] t c = 125 o c 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 junction capacitance, c j [pf] reverse voltage, v r [v] f = 1mhz 100 200 300 400 500 0 10 20 30 40 50 60 70 80 90 100 t c = 125 o c t c = 75 o c reverse recovery time, trr [ns] di/dt [a/ s] t c = 25 o c i f = 8a 100 200 300 400 500 0 1 2 3 4 5 6 7 8 9 10 t c = 25 o c t c = 75 o c reverse recovery current, irr [a] di/dt [a/ s] t c = 125 o c i f =8a 70 80 90 100 110 120 130 140 150 0 1 2 3 4 5 6 7 8 9 10 11 12 average forward current, i f(av) [a] case temperature, t c [ o c] dc
4 www.fairchildsemi.com ffpf08s60st rev. c0 ffpf08s60st mechanical dimensions dimensions in millimeters to-220f 2l potting type
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