microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3022 1 watts, 28 volts class-c, cw 1.0 to 2.0 ghz general description the MS3022 is a common base silicon npn transistor designed f or class-c general purpose microwave applications. the device is capable of withstanding an infinite load vswr under rated conditions. the MS3022 is particularly suited for microwave communication links in the 1.0 to 2.0 ghz frequency ranges. features gold metallizatiom p out = 1.0 w minimum g p = 7.0 db common base case outline .250 2lfl m210 (common base) absolute maximum ratings power dissipation device dissipation @25 c (p d ) 7 w (at rated pulse condition) voltage and current collector to base voltage (bv ces ) 45 v emitter to base voltage (bv ebo ) 3.5 v collector current (i c ) 0.2 a temperatures storage temperature -65 to +150 c operating junction temperature +200 c pin connection 1. collector 2. base 3. emitter 4. base electrical characteristics @ 25 c symbol characteristics test conditions min typ max units bv ceo collector to emitter breakdown i c = 5 ma, r be = 50 45 v bv cbo collector to base breakdown i c = 1 ma, i b = 0 ma 45 v bv ebo emitter to base breakdown i e = 1 ma, i c = 0 ma 3.5 v i cbo collector to base leakage v cb = 28.0 v 0.5 ma h fe dc C current gain i c = 0.1a, v ce = 5v 15 120 - q jc 1 thermal resistance 25 c/w notes: 1. at rated output power, pulse conditions a nd msc fixture rev. a : oct. 2009
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3022 functional characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out 1.0 w p in power input 0.2 w g p power gain 7.0 db h c collector efficiency f = 2.0ghz v cb = 28v p in = 0.2w cw 35 % c ob collector base capacitance f = 1 mhz, v cb = 28v 3.2 pf typical performance (2.0 ghz) input/output 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 0.00 0.05 0.10 0.15 0.20 0.25 input powe r (w) ouput power (w) efficie ncy 0.0% 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 output powe r(w) eff. typical performance (1.0 ghz) input/output 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0.00 0.05 0.10 0.15 0.20 0.25 input powe r (w) oup u t po wer (w) efficie ncy 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% 0.00 0.50 1.00 1.50 2.00 output powe r(w) eff.
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3022 MS3022 test circuit layout (@ 2ghz) MS3022 test circuit component designations and valu es part description part description c1, c2 39pf chip capacitor (atc 200a) c3 100pf chip capacitor (atc 200b) c4 47uf 63v electrolytic capacitor l1 length: 0.32 , awg20 m1 100 x 675 mils (w x l) m2 86 x 850 mils (w x l) m3 200 x 475 mils (w x l) m4 240 x 275 mils (w x l) m5 445 x 300 mils (w x l) m6 645 x 350 mils (w x l) m7 445 x 350 mils (w x l) m8 86 x 225 mils (w x l) m9 86 x 460 mils (w x l) m10 25 x 1055 mils (w x l) m11 25 x 1040 mils (w x l) pcb arlon, r =2.55, 31mils, 1oz
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3022 typical impedance values dut z s z l frequency z s ( ) z l ( ) 1.0 ghz 8.3 C j7.0 18.0 + j38.0 1.5 ghz 12.0 C j16.0 9.6 + j30.0 1.7 ghz 15.0 C j14.0 7.0 + j22.0 2.0 ghz 21.5 C j22.5 5.0 + j12.0 * v cb = 28v, p in = 0.2w p out > 1w * cw input matching network output matching network
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3022
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