TC1401 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 4 0.5 w high linearity and high efficiency gaas power fets features 0.5w typical power at 12 ghz photo enlargement linear power gain: g l = 9 db typical at 12 ghz high linearity: ip3 = 37 dbm typical at 12 ghz high power added efficiency (pae): 40% typical via holes in the source pads breakdown voltage: bv dgo 15 v lg = 0.35 m, wg = 1.2 mm tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1401 is a gaas pseudomorphic high electron mobility transistor (phemt) which has high linearity and high power added efficiency. the device is with via-hole processes to reduce the thermal resistance and grounding inductance. the short gate length enables the device to be used in a circuit up to 20ghz. all devices are 100% dc tested to assure consistent quality. backside gold plating is compatible with standard ausn die-attach. electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point, f = 12ghz,v ds = 8 v, i ds = 120 ma 26.5 27 dbm g l linear power gain, f = 12ghz,v ds = 8 v, i ds = 120 ma 8 9 db ip3 intercept point of the 3 rd -order intermodulation, f = 12ghz,v ds = 8 v, i ds = 120 ma, p scl = 14 dbm 37 dbm pae power added efficiency at 1db compression power, f = 12ghz 40 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 300 ma g m transconductance at v ds = 2 v, v gs = 0 v 200 ms v p pinch-off voltage at v ds = 2 v, i d = 2.4 ma -1.7* volts bv dgo drain-gate breakdown voltage at i dgo =0.6 ma 15 18 volts r th thermal resistance 24 c/w note: * for the tight control of the pinch-off voltage . TC1401?s are divided into 3 groups: (1) TC1401p0710 : vp = -1.5v to -1.9v (2) TC1401p0811 : vp = -1.6v to -2.0v (3) TC1401p0912 : vp = -1.7v to -2.1v in addition, the customers may specify their requirements.
TC1401 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 4 g d 380 12 470 12 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i ds drain current i dss p in rf input power, cw 26 dbm p t continuous dissipation 1.9 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c chip dimensions units: micrometers chip thickness: 50 gate pad: 59.5 x 76.0 drain pad: 86.0 x 76.0
TC1401 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 4 typical scattering parameters (t a =25 c ) v ds = 8 v, i ds = 120 ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.8812 -118.69 6.8027 109.38 0.0444 30.70 0.3464 -60.23 3 0.8615 -138.63 4.8458 95.45 0.0475 22.46 0.3334 -72.09 4 0.8533 -150.38 3.7044 85.59 0.0486 18.30 0.3462 -80.95 5 0.8495 -158.25 2.9703 77.67 0.0488 16.10 0.3704 -88.26 6 0.8478 -164.04 2.4611 70.87 0.0487 15.04 0.3997 -94.57 7 0.8472 -168.60 2.0880 64.79 0.0485 14.71 0.4307 -100.14 8 0.8472 -172.36 1.8031 59.23 0.0483 14.91 0.4619 -105.13 9 0.8476 -175.58 1.5788 54.09 0.0481 15.50 0.4922 -109.66 10 0.8482 -178.43 1.3979 49.30 0.0479 16.40 0.5210 -113.80 11 0.8489 179.00 1.2492 44.81 0.0478 17.53 0.5481 -117.60 12 0.8497 176.64 1.1250 40.58 0.0479 18.84 0.5733 -121.11 13 0.8506 174.44 1.0200 36.58 0.0481 20.27 0.5967 -124.37 14 0.8516 172.37 0.9303 32.81 0.0484 21.77 0.6182 -127.39 15 0.8526 170.40 0.8529 29.24 0.0489 23.31 0.6380 -130.22 16 0.8536 168.52 0.7855 25.86 0.0495 24.84 0.6562 -132.86 17 0.8546 166.71 0.7266 22.64 0.0503 26.34 0.6729 -135.33 18 0.8556 164.97 0.6745 19.59 0.0512 27.78 0.6881 -137.66 * the data does not include gate, drain and source bond wires. small signal model, v ds = 8 v, i ds = 120 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.06 0.03 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 8 2 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1401 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 4 schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.0813 nh rs 1.06 ohm rg 0.93 ohm ls 0.01 nh cgs 2.29 pf cds 0.298 pf ri 1.85 ohm rds 119 ohm cgd 0.08 pf rd 1.4 ohm gm 233.5 ms ld 0.014 nh t 3.9 psec small signal model, v ds = 8 v, i ds = 120 ma schemati tom2 model parameters vto -1.8 v vmax 0.5 v alpha 4.98 cgd 0.0743 pf beta 0.303 cgs 3.7075 pf gamma 0.021 cds 0.303 pf delta 0.142 ris 1.853 ohm q 0.99 rid 0.0001 ohm ng 0.1 vbr 15 v nd 0.01 rdb 121.37 ohm tau 3.9 ps cbs 4.569 pf rg 0.9308 ohm tnom 25 c rd 1.4 ohm ls 0.0096 nh rs 1.092 ohm lg 0.0813 nh is 1e-11 ma ld 0.014 nh n 1 afac 1 vbi 1 v nfing 1 vdelta 0.2 v chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v. cgs cgd cds rg rd rdb ris rs id lg ld ls cbs rid
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