specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm product features ? 60 ? 3500 mhz ? +24.7 dbm p1db ? +40.5 dbm output ip3 ? 20.4 db gain @ 900 mhz ? 16.5 db gain @ 1900 mhz ? +5v single positive supply ? lead-free/green/rohs- compliant sot-89 package applications ? final stage amplifiers for repeaters ? mobile infrastructure ? dbs / wll / w-lan ? defense / homeland security product description the ah118 is a high dynamic range driver amplifier in a low-cost surface mount packag e. the ingap/gaas hbt is able to achieve high performance across a broad range with +40.5 dbm oip3 and +24.7 dbm of compressed 1db power. the ah118 is available in a lead-free/green/rohs- compliant sot-89 package. all devices are 100% rf and dc tested. the ah118 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. internal biasing allows the ah118 to maintain high linearity over temperature and operate directly off a single +5v suppl y. this combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3g base stations. functional diagram rf in gnd rf out gnd 1 23 4 function pin no. input / base 1 output / collector 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 60 3500 test frequency mhz 1900 gain db 13.5 16.5 input return loss db 12 output return loss db 20 output p1db dbm +23 +24.7 output ip3 (2) dbm +39.5 +40.5 is-95a channel power @ -45 dbc acpr dbm +18 wcdma channel power @ -45 dbc aclr, 2140 mhz dbm +16.7 noise figure db 4.3 operating current range ma 140 160 175 device voltage v +5 1. test conditions unless otherwise noted: 25oc, vsupply = +5 v, in tuned app lication circuit. 2. 3oip measured with two tones at an output power of +11 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -65 to +150 c rf input power (continuous) +15 dbm device voltage +6 v device current 220 ma junction temperature +250 c operation of this device above any of th ese parameters may cause permanent damage. typical performance (3) parameter units typical frequency mhz 900 1900 2140 s21 - gain db 20.4 16.5 16.3 s11 - input r.l. db -15 -12 -15 s22 - output r.l. db -12 -20 -16 output p1db dbm +24.2 +24.7 +24.7 output ip3 dbm +40 +40.5 +40.5 is-95a channel power @ -45 dbc acpr, dbm +18.2 +18 wcdma channel power @ -45 dbc aclr dbm +16.7 noise figure db 4.0 4.3 4.8 supply bias +5 v @ 160 ma 3. typical parameters reflect pe rformance in a tuned application circuit: vsupply = +5 v, 160 ma, +25 c ordering information part no. description AH118-89G high linearity ingap hbt amplifier (lead-free/green/rohs-co mpliant sot-89 package) ah118-89pcb900 900 mhz evaluation board ah118-89pcb1900 1900 mhz evaluation board ah118-89pcb2140 2140 mhz evaluation board
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm typical device data s-parameters (v device = +5 v, i cc = 160 ma, 25 c, unmatched 50 ohm system) 0 0.5 1 1.5 2 2.5 frequency (ghz) gain / maximum stable gain -10 -5 0 5 10 15 20 25 30 35 40 gain (db) db(|s[2,1]|) db(gmax) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 s11 swp max 6ghz swp min 0.01ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 s22 swp max 6ghz swp min 0.01ghz notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown in the dashed red line. the impedance plots are shown from 50 ? 6000 mhz, with markers placed at 0. 5 ? 6.0 ghz in 0.5 ghz increments. s-parameters (v device = +5 v, i cc = 160 ma, 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -2.69 -173.38 21.74 153.70 -31.02 11.24 -7.02 -148.17 100 -2.16 -177.19 19.63 150.82 -30.31 7.90 -5.57 -162.45 200 -1.91 178.30 18.22 148.19 -29.87 5.01 -5.06 -173.51 400 -1.77 172.47 17.13 135.41 -29.83 4.07 -4.77 177.87 600 -1.60 166.83 15.99 121.91 -29.49 2.79 -4.60 171.65 800 -1.45 161.09 14.97 109.02 -29.18 2.11 -4.44 166.08 1000 -1.40 155.39 13.84 97.28 -28.70 1.64 -4.26 160.40 1200 -1.25 149.59 12.76 86.83 -28.63 -0.09 -4.14 155.01 1400 -1.20 143.79 11.71 76.95 -28.30 -1.34 -3.97 149.63 1600 -1.17 137.57 10.63 68.15 -27.94 -4.47 -4.00 144.03 1800 -1.13 132.05 9.75 59.55 -27.63 -7.00 -3.86 139.02 2000 -1.11 126.72 8.88 52.22 -27.51 -8.43 -3.84 134.24 2200 -1.05 121.50 8.00 45.09 -27.06 -11.00 -3.62 129.30 2400 -0.99 115.58 7.31 37.40 -27.02 -14.19 -3.55 124.42 2600 -0.93 110.41 6.52 30.66 -26.78 -18.24 -3.46 119.42 2800 -0.95 105.30 5.73 23.51 -26.66 -20.10 -3.34 114.26 3000 -0.92 100.11 5.05 17.07 -26.61 -23.28 -3.30 109.29 device s-parameters are available for download off of the website at: http://www.wj.com application circuit pc board layout circuit board material: .062? total thickness with a .014? getek top rf layer, 4 laye rs (other layers added for rigidity), 1 oz copper, microstrip line deta ils: width = .026?, spacing = .026? the silk screen markers ?a?, ?b?, ?c?, etc. and ?1?, ?2?, ?3?, etc. are used as placemarkers for the input and output tuning.
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm 900 mhz application circuit (ah118-89pcb900) frequency 900 mhz gain 20.4 db input return loss 15 db output return loss 12 db output p1db +24.2 dbm output ip3 (+11 dbm / tone, 1 mhz spacing) +40 dbm channel power (@-45 dbc acpr, is-95 9 channels fwd) +18.2 dbm noise figure 4 db device / supply voltage +5 v quiescent current 160 ma id=c4 c=100 pf id=c5 c=100 pf id=c9 c=2 pf diode1 id=c3 c=56 pf id=c2 c=1000 pf id=c1 c=1e5 pf id=c7 c=8.2 pf ind id=l1 l=33 nh id=l2 r=0 ohm id=l3 l=2.7 nh net="ah118" vcc = +5 v 5.6 v c7 should be placed at the silk screen marker 'c' on the wj evaluation board. all passive components are of size 0603 unless otherwise noted. c9 should be placed at the wj evaluation board. size 1206 size 0805 the capacitor should be placed 15.8 @ 0.9ghz from pin 3 the capacitor should be placed 6.1 @ 0.9ghz from pin 1 of the ah118 silk screen marker '7' on the size 0805 the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator. of the ah118. l2 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. configuration. component r1 is shown in the silkscreen but is not used for this s21 vs. frequency 17 18 19 20 21 22 800 850 900 950 1000 frequency (mhz) s21 ( db ) +25c -40c +85c acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 900 mhz -70 -60 -50 -40 12 13 14 15 16 17 18 19 output channel power (dbm) s11 vs. frequency -30 -25 -20 -15 -10 -5 0 800 850 900 950 1000 frequency (mhz) s11 ( db ) +25c -40c +85c s22 vs. frequency -30 -25 -20 -15 -10 -5 0 800 850 900 950 1000 frequency (mhz) s22 ( db ) +25c -40c +85c
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm 1900 mhz application circuit (ah118-89pcb1900) frequency 1900 mhz gain 16.8 db input return loss 12 db output return loss 20 db output p1db +24.7 dbm output ip3 (+11 dbm / tone, 1 mhz spacing) +40.5 dbm channel power (@-45 dbc acpr, is-95 9 channels fwd) +18 dbm noise figure 4.3 db device / supply voltage +5 v quiescent current 160 ma gai n 13 14 15 16 17 18 1800 1850 1900 1950 2000 frequency (mhz) s11, s22 vs. frequenc y -25 -20 -15 -10 -5 0 1.8 1.85 1.9 1.95 2 frequency (ghz) s11 , s22 ( db ) s22 s11 acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 1900 mhz -70 -60 -50 -40 12 13 14 15 16 17 18 19 output channel power (dbm) cap id =c1 c=100000 pf cap id =c2 c=1000 pf ca p id= c 3 c=56 pf ca p id= c9 c=1.8 pf cap id=c7 c=2.7 pf ca p id=c 4 c=56 pf ind id= l2 l=4.7 nh res id=l3 r=0 ohm cap id=c5 c=56 pf ind id=l1 l=18 nh subckt id= u1 net="ah118" port p=1 z=50 ohm port p=2 z= 50 ohm c7 should be placed at the silk screen marker 'a' on the w j evaluation board or 4.6 deg @ 1.84ghz from pin 1 of the ah118 c9 should be placed at the silk screen marker '5' on the evaluation board or 23 deg @ 1.9ghz from pin 3 of ah118. component r1 is shown in the silkscreen but is not used for this l3-- 0 ohm resistor can be removed from the final layout. configuration. +5v all passive components are of size 0603 unless otherwise noted. diode 5.6v the diode d1 is used as over-voltage protection on the evaluation. boards. it is not specifically required in the final circuit layout in a system using a dc regulator. d1
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm 2140 mhz application circuit (ah118-89pcb2140) frequency 2140 mhz gain 16.3 db input return loss 15 db output return loss 16 db output p1db +24.7 dbm output ip3 (+11 dbm / tone, 1 mhz spacing) +40.5 dbm wcdma channel power (@-45 dbc aclr, 3gpp, tm 1+64 dpch) +16.7 dbm noise figure 4.8 db device / supply voltage +5 v quiescent current 160 ma id=c4 c=56 pf id=c5 c=56 pf id=c9 c=1.2 pf diode1 id=c2 c=56 pf id=c3 c=1000 pf id=c1 c=1e5 pf id=l1 l=18 nh id=l3 r=0 ohm id=c6 c=1.8 pf id=l2 c=1.5 pf net="ah118" vcc = +5 v 5.6 v all passive components are of size 0603 unless otherwise noted. size 1206 size 0805 the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator. final circuit layout. l3 - the 0 ohm resistor - can be removed (with a thru line) in the c9 should be placed at the wj evaluation board. the capacitor should be placed 20.5 @ 2.14ghz from pin 3 silk screen marker '4' on the of the ah118. c6 should be placed at the silk screen marker "f" on the wj evaluation board. the capacitor should be placed 32.6 @ 2.14ghz from pin 1 of the ah118 s21 vs. frequency 13 14 15 16 17 18 2110 2130 2150 2170 frequency (mhz) s21 ( db ) +25c -40c +85c aclr vs. channel power 3gpp w-cdma, test model 1+64 dpch, 5 mhz offset, 2140 mhz -60 -55 -50 -45 -40 -35 12 13 14 15 16 17 18 output channel power (dbm) aclr ( dbc ) s11 vs. frequency -20 -15 -10 -5 0 2110 2130 2150 2170 frequency (mhz) s11 ( db ) +25c -40c +85c s22 vs. frequency -20 -15 -10 -5 0 2110 2130 2150 2170 frequency (mhz) s22 ( db ) +25c -40c +85c
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 6 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm 70 mhz reference design frequency 70 mhz gain 24.2 db input return loss 17 db output return loss 16 db output p1db +23.6 dbm output ip3 (+11 dbm / tone, d f =1 mhz) +41 dbm noise figure 4.8 db supply voltage +5 v current 160 ma 50 60 70 80 90 frequency (mhz) gain / return loss 16 18 20 22 24 26 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,2)|) (r) db(|s(2,1)|) (l) c=100000 pf c=1000 pf c=1000 pf l=180 nh c=1000 pf l=47 nh c=100 pf net="ah118" vcc = +5 v 5.6 v the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator. 150 mhz reference design frequency 150 mhz gain 23 db input return loss 21 db output return loss 14 db output p1db +23.5 dbm output ip3 (+11 dbm / tone, d f =1 mhz) +40 dbm noise figure 4.9 db supply voltage +5 v current 160 ma 120 130 140 150 160 170 180 frequency (mhz) gain / return loss 19 20 21 22 23 24 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,2)|) (r) db(|s(2,1)|) (l) c=100000 pf c=1000 pf c=1000 pf l=82 nh c=82 pf l=18 nh net="ah118" vcc = +5 v 5.6 v t he diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator. 340 mhz reference design frequency 340 mhz gain 20.6 db input return loss 14 db output return loss 13 db output p1db +24 dbm output ip3 (+11 dbm / tone, d f =1 mhz) +41.4 dbm noise figure 5.1 db supply voltage +5 v current 160 ma 260 280 300 320 340 360 380 400 420 frequency (mhz) gain / return loss 17 18 19 20 21 22 gain (db) -20 -15 -10 -5 0 5 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) c=18 pf c=1000 pf c=1000 pf c=1e5 pf c=5.6 pf l=100 nh l=15 nh l=8.2 nh r=1.8 ohm c=1000 pf net="ah118" +5v 5.6 v the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator.
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 7 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm 450 mhz reference design frequency 450 mhz gain 22 db input return loss 15 db output return loss 19 db output p1db +24 dbm output ip3 (+11 dbm / tone, d f =1 mhz) +40 dbm noise figure 5.7 db supply voltage +5 v current 160 ma 400 420 440 460 480 500 frequency (mhz) gain / return loss 18 19 20 21 22 23 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) c=1000 pf c=1000 pf c=1000 pf c=1e5 pf l=22 nh c=27 pf l=3.3 nh net="ah118" 5.6 v t he diode d1 is used as over-volta g e protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator. vcc = +5 v 2450 mhz reference design frequency 2450 mhz gain 14.4 db input return loss 14 db output return loss 15 db output p1db +25 dbm output ip3 (+11 dbm / tone, d f =1 mhz) +38 dbm supply voltage +5 v current 160 ma 2.3 2.4 2.5 2.6 frequency (ghz) gain / return loss 6 8 10 12 14 16 gai n (db) -20 -15 -10 -5 0 5 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(| s( 2, 2)| ) (r) id=c1 c=1e5 pf id=c2 c=1000 pf id=c3 c=56 pf id=c4 c=56 pf cap id=c5 c=56 pf id=c6 c=1.2 pf id=c7 c=1.2 pf id=d1 id=l1 l=18 nh id=l2 l=5.6 nh id=l3 r=0 ohm net="ah118" component r1 is shown in the silkscreen but is not used for this configuration. vcc = +5 v 5.6 v a ll passive components are of size 0603 unless otherwise noted. size 1206 size 0805 size 0805 the diode d1 is used as over-v oltage protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator. l3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. be placed .050" away from pin 1. the center of this component should the center of this component should be placed .170" away from the center of c6. be placed .200" away from pin 3. the center of this component should 3500 mhz reference design frequency 3500 mhz gain 11 db input return loss 14 db output return loss 10 db output p1db +23.5 dbm output ip3 (+11 dbm / tone, d f =1 mhz) +38.5 dbm noise figure 5.0 db supply voltage +5 v current 160 ma 3.4 3.45 3.5 3.55 3.6 frequency (ghz) gain / return loss 8 9 10 11 12 13 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) id=c1 c=100000 pf id=c2 c=1000 pf id=c3 c=56 pf id=c4 c=56 pf id=c6 c=0.2 pf id=d1 id=l1 l=18 nh id=l2 l=6.8 nh id=c7 c=.8 pf net="ah118" component r1 is shown in the silkscreen but is not used for this configuration. vcc = +5 v 5.6 v all passive components are of size 0603 unless otherwise noted. size 1206 size 0805 size 0805 the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the final circuit layout in a system using a dc regulator. be placed .050" away from pin 1. the center of this component should the center of this component should be placed .170" away from the center of c6.
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 8 of 8 may 2006 ah118 ? watt, high linearity ingap hbt amplifier product information the communications ed g e tm AH118-89G mechanical information this package is lead-free/green/ro hs-compliant. it is compatible with both lead- free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the leads is nipdau. outline drawing land pattern thermal specifications parameter rating operating case temperature (1) -40 to +85 c thermal resistance (2) , rth 92 c / w junction temperature (3) , tj 159 c notes: 1. the amplifier can be operated at 105 c case temperature for up to 1000 hours over its lifetime w ithout degradation in performance and will not degrade device operation at the recommended maximum 85 c case temperature for the rest of its lifetime. 2. the thermal resistance is referenced from the junction-to-case at a case temperature of 85 c. 3. this corresponds to the typical biasing condition of +5v, 160 ma at an 85 c case temperature. a minimum m ttf of 1 million hours is achieved for junction temperatures below 247 c. product marking the component will be marked with an ?ah118g? designator with an alphanumeric lot code on the top surface of the package. the obsolete tin-lead package is marked with an ?ah118? or ?e099? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1a value: passes between 250 and 500v test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated th ru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. mttf vs. gnd tab temperature 100 1000 10000 100000 60 70 80 90 100 110 120 tab temperature (c)
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