unisonic technologies co., ltd ut4232 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r502-337.a n-channel enhancement mode power mosfet ? description the ut4232 uses utc advanced technology to provide excellent r ds(on) , low gate charge and to be operated with low gate voltages. this device is suitable for applications, such as high-side dc/dc conversion, notebook and sever. ? features * v ds (v)=30v * i d =7a (v gs = 10v) * r ds(on) < 22m ? @ v gs =10v * r ds(on) < 32m ? @ v gs =4.5v * halogen free ? symbol ? ordering information ordering number package packing UT4232G-S08-R sop-8 tape reel
ut4232 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-337.a ? pin configuration
ut4232 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-337.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (ta=25c)(note 2) i d 7.8 a pulsed drain current (note 3) i dm 30 a 2 w power dissipation (ta=25c) derate above ta > 25c p d 0.016 w/c junction temperature t j +150 c junction and storage temperature range t stg -55 ~ +150 c note: 1. 2. 3. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. surface mounted on 1 in 2 copper pad of fr4 board, t 10sec; 135c/w when mounted on min pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction to ambient ja 62.5 c/w note: surface mounted on 1 in 2 copper pad of fr4 board, t 10sec; 135c/w when mounted on min ? electrical characteristics (t j = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v breakdown voltage temperature coefficient bv dss / t j reference to 25c,i d =1ma 0.02 v/c drain-source leakage current i dss v ds =30 v,v gs =0 v 1 a gate-source leakage current i gss v gs =20 v, v ds =0 v 100 na on characteristics gate threshold voltage v gs(th) v d s = v gs , i d =250 a 1 3 v v gs =10 v, i d =7 a 22 m ? drain-source on-state resistance r ds(on) v gs =4.5 v, i d =5 a 32 m ? dynamic parameters input capacitance c iss 720 1150 pf output capacitance c oss 230 pf reverse transfer capacitance c rss v ds =25v, v gs =0 v, f=1mhz 200 pf switching parameters turn-on delay time t d(on) 10 ns turn-on rise time t r 7 ns turn-off delay time t d(off) 22 ns turn-off fall-time t f v gs =10v,v ds =15v, r d =15 ? , r g =3.3 ? , i d =1 a 8 ns total gate charge q g 13 21 nc gate source charge q gs 3 nc gate drain charge q gd v gs =4.5 v, v ds =24 v, i d =7 a 9 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =1.7 a, v gs =0 v 1.2 v reverse recovery time t rr 16 ns reverse recovery charge q rr i s =7 a, v gs =0 v, di/dt=100a/ s 8 nc
ut4232 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-337.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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