midium power transistors ( 30v / 1a) MP6Z11 ? structure ? dimensions (unit : mm) npn/pnp silicon epitaxial planar transistor ? features low saturation voltage, typically v ce (sat) = 0.35v (max.) (i c / i b = 500ma / 25ma) v ce (sat) = -0.35v (max.) (i c / i b = -500ma / -25ma) ? applications ? inner circuit (unit : mm) package mpt6 code tr basic ordering unit (pieces) 1000 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 6v dc i c 1a pulsed i cp 2a symbol limits unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -6 v dc i c -1 a pulsed i cp -2 a symbol limits unit p d 2.0 w/total p d 1.4 w/element junction temperature t j 150 ? c range of storage temperature t stg -55 to 150 ? c *1 pw=10ms, single pulse *2 mounted on a 40 x 40 x 0.7[mm] ceramic board. type parameter collector current power dissipation parameter collector current parameter low frequency amplifier driver ? packaging specifications *1 *2 *2 (1) tr.1 emitter (2) tr.1 base (3) tr.2 collector (4) tr.2 emitter (5) tr.2 base (6) tr.1 collector *1 mpt6 (dual) (1) (2) (3) (6) (5) (4) (1) (2) (3) (4) (5) (6) tr.1 tr.2 (1) tr.1 emitter (2) tr.1 base (3) tr.2 collector (4) tr.2 emitter (5) tr.2 base (6) tr.1 collector 1/7 2011.02 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
MP6Z11 ? electrical characteristics (ta=25c) symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo 30 - - v i c = 1ma collector-base breakdown voltage bv cbo 30 - - v i c = 10a emitter-base breakdown voltage bv ebo 6--v i e = 10a collector cut-off current i cbo - - 100 na v cb = 30v emitter cut-off current i ebo - - 100 na v eb = 6v collector-emitter staturation voltage v ce(sat) - 120 350 mv i c = 500ma, i b = 25ma dc current gain h fe 270 - 680 - v ce = 2v, i c = 100ma turn-on time t on -90-ns storage time t stg - 300 - ns fall time t f -60-ns *1 pulsed *2 see switching time test circuit symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo -30 - - v i c = -1ma collector-base breakdown voltage bv cbo -30 - - v i c = -10a emitter-base breakdown voltage bv ebo -6 - - v i e = -10a collector cut-off current i cbo - - -100 na v cb = -30v emitter cut-off current i ebo - - -100 na v eb = -6v collector-emitter staturation voltage v ce(sat) - -150 -350 mv i c = -500ma, i b = -25ma dc current gain h fe 270 - 680 - v ce = -2v, i c = -100ma turn-on time t on -60-ns storage time t stg - 160 - ns fall time t f -50-ns *1 pulsed *2 see switching time test circuit -pf v cb = -10v, i e =0a f=1mhz i c = -0.5a, i b1 = -25ma, i b2 =25ma, v cc -5v collector output capacitance c ob -7 parameter conditions transition frequency f t - 320 - mhz v ce = -2v i e =100ma, f=100mhz -7 collector output capacitance c ob conditions parameter mhz 320 - v ce = 2v i e =-100ma, f=100mhz transition frequency f t - pf v cb = 10v, i e =0a f=1mhz - i c = 0.5a, i b1 = 25ma, i b2 =-25ma, v cc 5v * 2 * 2 * 2 ~ _ * 1 * 1 * 2 * 2 * 2 ~ _ * 1 * 1 2/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z11 ? electrical characteristic curves (ta=25 ? c) tr.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 1.0 2.0 3.0 4.0 5.0 collector current : i c [a] colector to emitter voltage:v ce [v] fig.1 typical output characteristics 3.0ma 2.0ma 1.5ma 1.0ma i b =0.5ma 4.0ma 5.0ma ta=25 c 10 100 1000 1 10 100 1000 dc current gain :h fe collector current :i c [ma] fig.2 dc current gain vs. collector current( ) v ce =5v 3v ta=25 c 10 100 1000 1 10 100 1000 dc current gain :h fe collector current :i c [ma] fig.3 dc current gain vs. collector current( ) v ce =2v pulsed ta=125 c 75 c 25 c - 40 c 0.001 0.01 0.1 1 10 1 10 100 1000 collector saturation voltage :v ce (sat)[v] collector current :i c [ma] fig.4 collector - emitter saturation voltage vs. collector current( ) ta=25 c v ce =2v i c /i b =50 20 10 0.01 0.1 1 1 10 100 1000 collector saturation voltage :v ce (sat)[v] collector current :i c [ma] fig.5 collector - emitter saturation voltage vs. collector current( ) i c /i b =20 pulsed ta=125 c 75 c 25 c - 40 c 1 10 100 1000 0 0.5 1 1.5 collector current : i c [ma] base to emitter voltage :v be [v] fig.6 ground emitter propagation characteristics v ce =2v pulsed ta=125 c 75 c 25 c - 40 c 3/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z11 1 10 100 0.1 1 10 100 collector output capacitance : cob(pf) emitter input capacitance : cib(pf) collector - base voltage : v cb (v) emitter - base voltage : v eb (v) fig.7 emitter input capacitance vs. emitter - base voltage collector output capacitance vs.collector - base voltage ta=25 c f=1mhz i c =0a cob cib 10 100 1000 10 100 1000 transition frequency :f t [mhz] emitter current :i e [ma] fig8. gain bandwidth product vs. emitter current ta=25 c v ce =2v f=100mhz 0.001 0.01 0.1 1 10 0.1 1 10 100 collector current : i c (a) collector to emitter voltage :v ce (v) fig9. safe operating area ta=25 c when one element operated single non repetitive pulse 100ms 10ms 1ms dc (mounted on a ceramic board) 4/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z11 tr.2 -0.50 -0.45 -0.40 -0.35 -0.30 -0.25 -0.20 -0.15 -0.10 -0.05 0.00 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 collector current :i c [a] colector to emitter voltage:v ce [v] fig.1 typical output characteristics - 3.0ma - 1.5ma - 1.0ma i b = - 0.5ma - 4.0ma - 5.0ma - 2.0ma ta=25 c 10 100 1000 -1 -10 -100 -1000 dc current gain :h fe collector current :i c [ma] fig.2 dc current gain vs. collector current( ) v ce = - 5v - 2v ta=25 c 10 100 1000 -1 -10 -100 -1000 dc current gain :h fe collector current :i c [ma] fig.3 dc current gain vs. collector current( ) v ce = - 2v pulsed ta=125 c 75 c 25 c - 40 c -0.01 -0.1 -1 -10 -1 -10 -100 -1000 collector saturation voltage :v ce (sat)[v] collector current :i c [ma] fig.4 collector - emitter saturation voltage vs. collector current( ) ta=25 c pulsed i c /i b =50 20 10 -0.01 -0.1 -1 -1 -10 -100 -1000 collector saturation voltage :v ce (sat)[v] collector current :i c [ma] fig.5 collector - emitter saturation voltage vs. collector current( ) i c /i b =20 pulsed ta=125 c 75 c 25 c - 40 c -1 -10 -100 -1000 -1.5 -1 -0.5 0 collector current :i c [ma] base to emitter voltage :v be [v] fig.6 ground emitter propagation characteristics v ce = - 2v pulsed ta=125 c 75 c 25 c - 40 c 5/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z11 1 10 100 -0.1 -1 -10 -100 collector output capacitance : cob(pf) emitter input capacitance : cib(pf) collector - base voltage : v cb (v) emitter - base voltage : v eb (v) fig.7 emitter input capacitance vs. emitter - base voltage collector output capacitance vs.collector - base voltage ta=25 c f=1mhz i c =0a cob cib 10 100 1000 10 100 1000 transition frequency : f t [mhz] emitter current :i e [ma] fig8. gain bandwidth product vs. emitter current ta=25 c v ce = - 2v f=100mhz -0.001 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 collector current : i c (a) collector to emitter voltage :v ce (v) fig9. safe operating area ta=25 c when one element operated single non repetitive pulse 100ms 10ms 1ms dc (mounted on a ceramic board) 6/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z11 ? switching time test circuit v in p w pw 50 s duty cycle Q1% t stg i b1 i b2 90% 10% t on t f i c i b1 i b2 i c v cc 5v ~ _ ~ _ base current waveform collector current waveform r l =10? i b2 i b1 90% 10% t stg t on t f i c v in pw pw 50 s duty cycle Q1% i b1 i b2 i c ~ _ base current waveform v cc -5v ~ _ collector current waveform r l =10? 7/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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