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inchange semiconductor product specification silicon pnp power transistors 3CD6D description ? with to-3 package ? low collector saturation voltage applications ? for power amplifier and low speed switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -110 v v ceo collector-emitter voltage open base -110 v v ebo emitter-base voltage open collector -4 v i c collector current -5 a p c collector power dissipation t c =75 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 3CD6D characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -110 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i b =0 -4 v v cesat collector-emitter saturation voltage i c =-2.5a; i b =-0.5a -1.0 -1.5 v v besat base-emitter saturation voltage i c =-2.5a; i b =-0.5a -2.0 v i cbo collector cut-off current v cb =-110v; i e =0 -0.1 ma i ceo collector cut-off current v ce =-110v; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 ma h fe dc current gain i c =-2.5a ; v ce =-10v 10 180
inchange semiconductor product specification 3 silicon pnp power transistors 3CD6D package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

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