?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet september 2006 qfet ? FQPF12N60CT 600v n-channel mosfet features ? 12a, 600v, r ds(on) = 0.65 ? @v gs = 10 v ? low gate charge ( typical 48 nc) ? low crss ( typical 21 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. absolute maximum ratings thermal characteristics d g s gs d to-220f potted fqpf series symbol parameter FQPF12N60CT units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 12* a - continuous (t c = 100c) 7.4* a i dm drain current - pulsed (note 1) 48* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 870 mj i ar avalanche current (note 1) 12 a e ar repetitive avalanche energy (note 1) 5.1 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 51 w - derate above 25c 0.41 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter FQPF12N60CT units r jc thermal resistance, junction-to-case 2.43 c /w r ja thermal resistance, junction-to-ambient 62.5 c /w * drain current limited by maximum junction temperature
2 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 11mh, i as = 12a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 12a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity FQPF12N60CT FQPF12N60CT to-220f -- -- 50 symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.5 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6 a -- 0.53 0.65 ? g fs forward transconductance v ds = 40 v, i d =6 a (note 4) -- 13 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1760 2290 pf c oss output capacitance -- 182 235 pf c rss reverse transfer capacitance -- 21 28 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 12a, r g = 25 ? (note 4, 5) -- 30 70 ns t r turn-on rise time -- 85 180 ns t d(off) turn-off delay time -- 140 290 ns t f turn-off fall time -- 90 190 ns q g total gate charge v ds = 480 v, i d = 12a, v gs = 10 v (note 4, 5) -- 48 63 nc q gs gate-source charge -- 8.5 -- nc q gd gate-drain charge -- 21 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 12 a i sm maximum pulsed drain-source diode forward current -- -- 48 a v sd drain-source diode forward voltage v gs = 0 v, i s = 12 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 12 a, di f / dt = 100 a/ s (note 4) -- 420 -- ns q rr reverse recovery charge -- 4.9 -- c
3 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1 02 03 04 05 0 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i ? d = 12a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 6.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ ] ? 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 2.43 /w m ax. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
package dimensions to-220f potted * front/back side isolation voltage : ac 2500v dimensions in millimet ers 7 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet
8 www.fairchildsemi.com FQPF12N60CT rev. a FQPF12N60CT 600v n-channel mosfet trademarks the following are registered and unregistered tr ademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it co nvey any license under its pate nt rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not a uthorized for use as critical components in life support devices or systems without the express written app roval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specif ications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor rese rves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
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