f red ultrafa st soft reco ver y diode, 16 a fe atures u l t r a f a s t a n d u l t r a s o f t r e c o v e r y benef its reduced rfi and emi reduced power loss in diode and switch ing transistor higher frequency operation reduced snubbing reduced parts count descri p t ion pro duct sum mar y v r 600 v t (typ.) rr absolu te maxim um ra tings p arameter symbol test condition s v alues units cathod e to anode voltage 600 maximum continuous forw ard current i f 16 a single pulse forward current 150 maximum repetitive forward current 60 maximum pow er dissipation 74 w 29 operating junct ion and storage tempe rature range - 55 to + 150 n-hf a16p b60 n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 1 o f 6 h fa 1 6 p b 6 0 i s a s t a t e o f t h e a r t u l t r a f a s t r e c o v e r y d i o d e . e m p l o y i n g t h e l a t e s t i n e p i t a x i a l c o n s t r u c t i o n a n d a d v a n c e d p r o c e s s i n g t e c h n i q u e s i t f e a t u r e s a s u p e r b c o m b i n a t i o n o f c h a r a c t e r i s t i c s w h i c h r e s u l t i n p e r f o r m a n c e w h i c h i s u n s u r p a s s e d b y a n y r e c t i f i e r p r e v i o u s l y a v a i l a b l e . w i t h b a s i c r a t i n g s o f 6 0 0 v a n d 1 6 a c o n t i n u o u s c u r r e n t , t h e h fa 1 6 p b 6 0 i s e s p e c i a l l y w e l l s u i t e d f o r u s e a s t h e c o m p a n i o n d i o d e f o r i g b t s a n d m o s f e t s . i n a d d i t i o n t o u l t r a f a s t r e c o v e r y t i m e , t h e f r e d p r o d u c t l i n e f e a t u r e s e x t r e m e l y l o w v a l u e s o f p e a k r e c o v e r y c u r r e n t ( i r r m ) a n d d o e s n o t e x h i b i t a n y t e n d e n c y t o s n a p - o f f d u r i n g t h e t b p o r t i o n o f r e c o v e r y . t h e f r e d f e a t u r e s c o m b i n e t o o f f e r d e s i g n e r s a r e c t i f i e r w i t h l o w e r n o i s e a n d s i g n i f i c a n t l y l o w e r s w i t c h i n g l o s s e s i n b o t h t h e d i o d e a n d t h e s w i t c h i n g t r a n s i s t o r. t h e s e f r e d a d v a n t a g e s c a n h e l p t o s i g n i f i c a n t l y r e d u c e s n u b b i n g , c o m p o n e n t c o u n t a n d h e a t s i n k s i z e s . t h e f r e d h fa 1 6 p b 6 0 i s i d e a l l y s u i t e d f o r a p p l i c a t i o n s i n p o w e r s u p p l i e s a n d p o w e r c o n v e r s i o n s y s t e m s ( s u c h a s i n v e r t e r s ) , m o t o r d r i v e s , a n d m a n y o t h e r s i m i l a r a p p l i c a t i o n s w h e r e h i g h s p e e d , h i g h e f f i c i e n c y i s n e e d e d . t = 100 oc c t = 100 oc c t = 25 oc c oc common cathode cathode 2 1 3 anode t o - 2 4 7 a c m o d i f i e d 1.75 v p d 1 9 ns ve r y l o w i a n d q r r m r r c o m p l i a n t t o r o h s d e s i g n e d a n d q u a l i f i e d f o r i n d u s t r i a l l e v e l l f ( a v ) v a t l f f t m a x . j d i o d e v a r i a t i o n p a c k a g e t o - 2 4 7 a c m o d i f i e d ( 2 p i n s ) 1 6 a 1 5 0 o c s i n g l e d i e v r l f s m l f r m t , t j s t g v w w w . n e l l s e m i . c o m
therma l - mec han ica l spe cif ica tio ns per leg p ar ameter symbol test conditions min . typ . max . units lead temperature t lead 0.063'' from case (1.6 mm ) for 10 s C junction to case , single leg conduction r thjc - - k / w junction to case , both legs conducting - - therma l resistance , junction to ambie nt r thja typical socket mount C thermal resistance , case to heatsin k r thcs mounting surface , flat , smoo th and greased - 0.25 - weight - 6.0 - g - 0.21 - oz . mounting torque 6.0 (5.0) - 12 (10) kgf . cm ( lbf . in ) marking device case style to -247 ac ( jedec ) n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 2 o f 6 hfa1 6pa 60 c oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t condition s v - = 32 a i f - - a - - 600 1.45 10 1.0 - 400 pf 25 e lectri cal specif ica t ions ( t j cathode to anode breakdown volta ge v br = 100 a i r maximum forwa rd voltage = 16 a i f = 16 a , t i = 125 oc f j maximum reverse leakage curre nt i rm junction capacitance 1.60 1.75 - - oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t conditions ns - - 42 74 dynami c recove r y charac terist ics perleg ( t j reverse recov ery time i f = 1.0 a, di /dt = -200 a/s, v =30 v, t = 25 c f r j 19 - a - 6.5 4.0 - nc - 220 80 - peak recovery c urrent reverse recov ery charge t rr t rr1 t rr2 i rrm1 i rrm2 q rr1 q rr2 t = 125 oc j t = 125 oc j t = 125 oc j t = 25 oc j t = 25 oc j t = 25 oc j i = 16 a f di /dt = -200 a/s f v = 200 v r - v fm c t v = 2 0 0 v r t = 1 2 5 c , v = v r a t e d j r r v = v r a t e d r r i = 0 . 5 a , i = 1 . 0 a , i = 2 5 0 m a ( r g # 1 c k t ) f r r r 22 - 1.85 units max . typ . min . units max . typ . min . a/ s - 160 - dl /dt2 (rec)m t = 125 oc j t = 25 oc j - - nh 12 series inductance l s 5 0 1 0 0 0 - - measured lead to lead 5 mm from pack age body dl /dt1 (rec)m 120 6.0 60 30 10 600 180 1.65 2.0 n-hf a16p b60 1 8 8 40 1.7 300 40 w w w . n e l l s e m i . c o m peak rate of fall of recovery current during t b
n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 3 o f 6 n-hf a16p b60 fig .1 maximum forward volta ge drop vs . instantaneous forward current fig .2 t ypical reverse current vs . reverse voltage fig .3 t ypica l junction capacitance vs . reverse voltage 1 1 0 t = 150 j t = 125 j t = 25 j 1.0 2.4 1.2 1.4 forwar d v oltage dr op ( v ), v fm i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) , l f 100 1.8 2.2 2.0 1.6 reverse voltage (v), v r r e v e r s e c u r r e n t ( a ) , l r 10 10 0 10 100 1000 re verse v oltage ( v ), v r j u n c t i o n c a p a c i t a n c e ( p f ) , c t 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e , z t h j c fig .4 maximum the rmal impedance z characteristic s thj c 0. 01 0. 1 1 1 0 10 0 1000 100 600 500 300 10 00 0 400 200 t = 150 j t = 125 c j t = 25 o c j 0 t = 25 j 1 0 single pulse ( ther mal response ) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 n o t e s : 1 . d u t y f a c t o r d = t 1 / t 2 2 . p e a k t = p d m x z t h j c + t c p d m t 1 t 2 r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) , t 1 w w w . n e l l s e m i . c o m
n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 4 o f 6 n-hf a16p b60 fig .5 t ypical reverse recovery time vs . di / dt f fig .6 t ypical recove ry current vs . di / dt f fig .7 t ypical stored charge vs . di i / dt f fig .8 t ypical di / dt vs . di / dt ( re c ) m f 100 40 0 100 1000 di / ( / ) dt a f s t r r ( n s ) 60 20 800 600 0 100 1000 di / ( / ) dt a f s i r r ( a ) 200 400 25 0 100 1000 di / ( / ) dt a s f q ( n c ) r r 5 20 10 10000 1000 100 1000 di / dt ( a / ) f s d i ( r e c ) m / d t ( a / s ) 100 15 i f = 32 a i f = 16 a i f = 5 a v = 200 v r t = 125 j t = 25 j 80 i f = 32 a i f = 16 a i f = 5 a v = 200 v r t = 125 j t = 25 j i f = 32 a i f = 16 a i f = 5 a v = 200 v r t = 125 j t = 25 j i f = 32 a i f = 16 a i f = 5 a v = 200 v r t = 125 j t = 25 j fig.9 reverse recovery parameter test circuit irfp 250 d . u . t . l = 70 h v r = 200 v 0.01 g d s di f / dt adjust w w w . n e l l s e m i . c o m
n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 5 o f 6 n-hf a16p b60 fig.10 reverse recovery waveform and definitions q rr 0.5 i rrm di ( rec ) m / dt 0.75 i rrm i rrm t rr t b t a i f di f / dt 0 (1) (2) (3) (4) (5) (1) di / dt - rate of change of current f through zero crossing (2) i rrm - peak re v erse reco v er y current (3) t - re v erse reco v er y time measured rr from z ero crossing point of negativ e going i to point where a line passing f through 0.75 i rrm and 0.50 i rrm e xtrapolated to zero current . (4) q - area under cur v e defined b y t rr rr i rrm l x rr rrm 2 q = rr (5) di / dt - peak rate of change of ( rec ) m current dur ing t b por tion of t rr and t or de ring in forma tion t abl e 1 - fred family 2 - current rating (16 =16 a ) 3 - pb = to -247 ac modified 4 - voltage r a t i ng: (60 = 600 v ) 5 device code 3 1 2 h fa 1 6 p b 6 0 n - nell semiconductors product - 4 5 w w w . n e l l s e m i . c o m
n - h f a 1 6 p b 6 0 o u t i n e t a b l e n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s n-hf a16p b60 p a g e 6 o f 6 w w w . n e l l s e m i . c o m
|
