3-76 gaas beam lead schottky barrier diodes technical data features ? gold tri-metal system for improved reliability ? low capacitance ? low series resistance ? high cutoff frequency ? polyimide passivation ? multiple configurations description the HSCH-9101 single, the hsch-9201 series pair, and the hsch-9251 anti-parallel pair are advanced gallium arsenide schottky barrier diodes. these devices are fabricated utilizing molecular beam epitaxy (mbe) manufacturing techniques and feature rugged construction and consistent electrical performance. a polyimide coating provides scratch protection and resistance to contamination. HSCH-9101 hsch-9201 hsch-9251 HSCH-9101 280 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 125 (4.9) 115 (4.5) 270 (10.6) 190 (7.5) 636 (25.0) 626 (24.6) l = 0.1 nh 183 (7.2) 178 (7.0) 60 (2.4) 50 (2.0) hsch-9201 280 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 115 (4.5) 105 (4.1) 346 (13.6) 266 (10.5) 712 (28.0) 702 (27.6) l = 0.1 nh 183 (7.2) 178 (7.0) 60 (2.4) 50 (2.0) hsch-9251 junction side up 290 50 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 125 (4.9) 115 (4.5) 280 50 (10.6) 190 (7.5) 712 (28.0) 702 (27.6) l = 0.1 nh dimensions in m (1/1000 inch) 183 (7.2) 178 (7.0) 60 (2.4) 50 (2.0) 5965-8851e
3-77 electrical specifications at t a = 25 c part number HSCH-9101 hsch-9201 hsch-9251 symbol parameters and test conditions units min. typ. max. min. typ. max. min. typ. max. c j [1] junction capacitance pf 0.040 0.050 0.040 0.050 0.040 v r = 0 v, f = 1 mhz d c j [1] junction capacitance difference pf 0.005 0.010 v r = 0 v, f = 1 mhz r s [2] series resistance w 666 v f1 forward voltage mv 700 800 700 800 700 800 i f = 1 ma v f10 forward voltage mv 800 850 800 850 800 850 i f = 10 ma d v f forward voltage difference mv 15 15 i f = 1 ma and 10 ma v br reverse breakdown voltage v 4.5 4.5 v r = v br measure i r 10 m a (per junction) notes: 1. junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitanc e (0.035 pf). 2. series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6 w . applications this line of schottky diodes is optimized for use in mixer appli- cations at millimeter wave frequencies. some suggested mixer types are single ended and single balanced for the single and series pair. the anti-parallel pair is ideal for harmonic mixers. assembly techniques thermocompression bonding is recommended. welding or conductive epoxy may also be used. for additional information see application note 979, the handling and bonding of beam lead devices made easy, or application note 992, beam lead attachment methods, or application note 993, beam lead device bonding to soft substrates. gaas diodes are esd sensitive. proper precautions should be used when handling these devices. maximum ratings power dissipation at t lead = 25 c ........................... 75 mw per junction measured in an infinite heat sink derated linearly to zero at maximum rated temperature operating temperature ................................................. -65 c to +150 c storage temperature .................................................... -65 c to +150 c mounting temperature ......................................... 235 c for 10 seconds minimum lead strength ............................................................. 6 grams
3-78 typical parameters 100 10 1 0.1 0.01 forward voltage (v) figure 1. typical forward characteristics for HSCH-9101, hsch-9201, and hsch-9251. forward current (ma) 0 0.2 0.4 0.6 1.2 1.0 0.8 +125 c +25 c -55 c figure 2. typical noise figure and i.f. impedance vs. local oscillator power, for HSCH-9101 and hsch-9201. noise figure (db) if impedance ( ) 0 6 local oscillator power (dbm) 810 300 8 7 2 100 200 14 46 12 z if nf spice parameters parameter units hsch-9xxx b v v5 c j0 pf 0.04 e g ev 1.43 i bv a10e-5 i s a 1.6 x 10e - 13 n 1.20 r s w 5 p b v 0.7 p t 2 m 0.5
|
