features center amplifying gate hermetic metal case with ceramic insulator (also available with glass-metal seal up to 1200v) international standard case to-209ab (to-93) compression bonded encapsulation for heavy duty operations such as severe thermal cycling typical applications dc motor controls controlled dc power supplies ac controllers i t(av) 230 a @ t c 85 c i t(rms) 360 a i tsm @ 50hz 5700 a @ 60hz 5970 a i 2 t@ 50hz 163 ka 2 s @ 60hz 149 ka 2 s v drm /v rrm 400 to 1600 v t q typical 100 s t j - 40 to 125 c parameters st230s units major ratings and characteristics case style to-209ab (to-93) 230a phase control thyristors stud version st230s series 1 bulletin i25163 rev. c 03/03 www.irf.com
st230s series 2 bulletin i25163 rev. c 03/03 www.irf.com electrical specifications voltage ratings voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 04 400 500 st230s 08 800 900 30 12 1200 1300 16 1600 1700 i t(av) max. average on-state current 230 a 180 conduction, half sine wave @ case temperature 85 c i t(rms) max. rms on-state current 360 a dc @ 78c case temperature i tsm max. peak, one-cycle 5700 t = 10ms no voltage non-repetitive surge current 5970 t = 8.3ms reapplied 4800 t = 10ms 100% v rrm 5000 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 163 t = 10ms no voltage initial t j = t j max. 148 t = 8.3ms reapplied 115 t = 10ms 100% v rrm 105 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 1630 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of on-state slope resistance r t 2 high level value of on-state slope resistance v tm max. on-state voltage 1.55 v i pk = 720a, t j = t j max, t p = 10ms sine pulse i h maximum holding current 600 i l max. (typical) latching current 1000 (300) 0.92 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.88 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.81 (i > x i t(av) ),t j = t j max. parameter st230s units conditions 0.98 (i > x i t(av) ),t j = t j max. on-state conduction ka 2 s v m ? ma t j = 25c, anode supply 12v resistive load a di/dt max. non-repetitive rate of rise gate drive 20v, 20 ? , t r 1s of turned-on current t j = t j max, anode voltage 80% v drm gate current 1a, di g /dt = 1a/s v d = 0.67% v drm , t j = 25c i tm = 300a, t j = t j max, di/dt = 20a/s, v r = 50v dv/dt = 20v/s, gate 0v 100 ?, t p = 500s parameter st230s units conditions 1000 a/s switching t q typical turn-off time 100 s t d typical delay time 1.0
st230s series 3 bulletin i25163 rev. c 03/03 www.irf.com dv/dt maximum critical rate of rise of off-state voltage i drm max. peak reverse and off-state i rrm leakage current blocking 500 v/s t j = t j max. linear to 80% rated v drm parameter st230s units conditions 30 ma t j = t j max, rated v drm /v rrm applied t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case r thcs max. thermal resistance, case to heatsink t mounting torque, 10% 31 (275) 24.5 (210) wt approximate weight 280 g case style to - 209ab (to-93) see outline table parameter st230s units conditions 0.10 dc operation 0.04 mounting surface, smooth, flat and greased thermal and mechanical specification p gm maximum peak gate power 10.0 t j = t j max, t p 5ms p g(av) maximum average gate power 2.0 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 3.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt dc gate current required t j = - 40c to trigger ma t j = 25c t j = 125c v gt dc gate voltage required t j = - 40c to trigger v t j = 25c t j = 125c i gd dc gate current not to trigger 10 ma parameter st230s units conditions 20 5.0 triggering v gd dc gate voltage not to trigger 0.25 v t j = t j max typ. max. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied w vt j = t j max, t p 5ms c k/w nm (lbf-in) non lubricated threads lubricated threads
st230s series 4 bulletin i25163 rev. c 03/03 www.irf.com ? r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) ordering information table 180 0.016 0.012 120 0.019 0.020 90 0.025 0.027 k/w t j = t j max. 60 0.036 0.037 30 0.060 0.060 conduction angle sinusoidal conduction rectangular conduction units conditions 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - p = stud base 3/4"-16unf2a threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast - on terminals (gate and auxiliary cathode leads) 8 - v = glass-metal seal (only up to 1200v) none = ceramic housing (over 1200v) note: for metric device m16 x 1.5 contact factory device code 5 1 2 3 4 st 23 0 s 16 p 0 7 6 8
st230s series 5 bulletin i25163 rev. c 03/03 www.irf.com fast-on terminals case style to-209ab (to-93) all dimensions in millimeters (inches) outline table 2 white shrink red shrink red cathode red silicon rubber +i 210 (8.26) 10 (0.39) c.s. 0.4mm (0.0006 s.i.) 38.5 (1 .52) max. + - 220 (8.66) 10 (0.39) ceramic housing 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 8.5 (0.33) dia. c.s. 25mm 2 (0.039 s.i.) flexible lead 4 (0.16) max. 2 2 ( 0 . 8 6 ) m i n . max. 35 (1.38) max. 3/4"-16unf-2a * 27.5 (1.08) sw 32 27.5 (1.08) max. dia. white gate 9 .5 ( 0 . 3 7 ) m i n . 16 (0.63) max. 2 white shrink red shrink red cathode red silicon rubber +i 210 (8.26) 10 (0.39) c.s. 0.4mm (0.0006 s.i.) max. 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 38.5 (1.52) max. 16 (0.63) max. 8.5 (0.33) dia. + - glass metal seal 28.5 (1.12) max. dia. 220 (8.66) 10 (0.39) sw 32 c.s. 25mm 2 (0.039 s.i.) flexible lead 4 (0.16) max. 2 2 ( 0 . 8 6 ) m i n . 35 (1.38) max. 3/4"-16unf-2a * 27.5 (1.08) 9 . 5 ( 0 . 3 7 ) m i n . white gate amp. 280000-1 ref-250 * for metric device: m16 x 1.5 - lenght 21 (0.83) max. contact factory * for metric device: m16 x 1.5 - lenght 21 (0.83) max. contact factory
st230s series 6 bulletin i25163 rev. c 03/03 www.irf.com 80 90 100 110 120 130 0 50 100 150 200 250 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle st230s series r (dc) = 0.1 k/ w thjc 70 80 90 100 110 120 130 0 100 200 300 400 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period st230s series r (dc) = 0.1 k/ w thjc fig. 2 - current ratings characteristics fig. 1 - current ratings characteristics 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 0 50 100 150 200 250 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) st230s series t = 125c j 25 50 75 100 125 ma ximum allow a b le amb ient temp era t ure (c) r = 0. 08 k/ w - d el t a r t h s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 0 50 100150200250300350400 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st230s series t = 125c j fig. 4 - on-state power loss characteristics fig. 3 - on-state power loss characteristics
st230s series 7 bulletin i25163 rev. c 03/03 www.irf.com 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) st230s series steady state value r = 0.1 k/ w (dc operation) thjc fig. 8 - thermal impedance z thjc characteristic 2000 2500 3000 3500 4000 4500 5000 5500 6000 0.01 0.1 1 pulse tra in dura t io n ( s) versus pulse tra in dura t ion. control peak half sine wave on-state current (a) init ia l t = 125c no voltage reapplied rated v reapp lied j rrm st2 3 0 s se r i e s maximum non repetitive surge current of conduction may not be maintained. fig. 6 - maximum non-repetitive surge current fig. 5 - maximum non-repetitive surge current 2000 2500 3000 3500 4000 4500 5000 5500 110100 numb er of eq ua l am p litud e ha lf cyc le current pulses (n) peak half sine wave on-state current (a) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st230s se ries at any rated load condition and with rated v ap plied following surg e. rrm fig. 7 - on-state voltage drop characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 10 100 1000 10000 0.5 1.5 2.5 3.5 4.5 tj = 25?c st230s series tj = 125?c
st230s series 8 bulletin i25163 rev. c 03/03 www.irf.com fig. 9 - gate characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj = - 4 0 c (1) (2) (3) instantaneous gate current (a) in st a n t a n e o u s g a t e v o l t a g e ( v ) a) recommended load line for b) recommended load line for <=30% rated di/ dt : 10v, 10ohms frequency limited by pg(av) rated di/ dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms de vic e : st230s series rectangular gate pulse (4) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 03 /03 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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