TLP559 2002-09-25 1 toshiba photocoupler gaa ? as ired & photo ic TLP559 digital logic ground isolation line receiver microprocessor system interfaces switching power supply feedback control transistor invertor the toshiba TLP559 consists of a gaa ? as high ? output light emitting diode and a high speed detector of one chip photo diode ? transistor. this unit is 8 ? lead dip package. TLP559 has no internal base connection, and a faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. so this is suitable for application in noisy environmental condition. isolation voltage: 2500vrms (min.) switching speed: t phl = 0.3s (typ.) t plh = 0.5s (typ.) (r l = 1 .9k ? ) ttl compatible ul recognized: ul 1 577, file no.e67349 pin configuration (top view) shield 1 : n.c. 2 : anode 3 : cathode 4 : n.c. 5 : emitter 6 : collector 7 : n.c. 8 : v cc 1 2 6 8 3 5 4 7 schematic 2 3 v cc 8 i cc i f v f gnd 6 v o i o 5 shield toshiba 11 ? 10c4 weight: 0.54g unit in mm
TLP559 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit forward current (note 1) i f 25 ma pulse forward current (note 2) i fp 50 ma peak transient forward current (note 3) i fpt 1 a reverse voltage v r 5 v led diode power dissipation (note 4) p d 45 mw output current i o 8 ma peak output current i op 16 ma output voltage v o 0.5~15 v supply voltage v cc 0.5~15 v detector output power dissipation (note 5) p o 100 mw operating temperature range t opr 55~100 c storage temperature range t stg 55~125 c lead solder temperature (10s) (note 6) t sol 260 c isolation voltage (ac, 1 min., r.h. 60%) (note 7) bv s 2500 vrms (note 1) derate 0.8ma above 70c. (note 2) 50% duty cycle,1ms pulse width. derate 1.6ma / c above 70c. (note 3) pulse width 1s, 300pps. (note 4) derate 0.9mw / c above 70c. (note 5) derate 2mw / c above 70c. (note 6) soldering portion of lead: up to 2mm from body of the devise. (note 7) device considered a two-terminal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together.
TLP559 2002-09-25 3 electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 16ma D 1.65 1.85 v forward voltage temperature coefficient ? v f / ? ta i f = 16ma D 2 D mv / c reverse current i r v r = 5v D D 10 a led capacitance between terminal c t v f = 0, f = 1mhz D 45 D pf i oh (1) i f = 0ma, v cc = v o = 5.5v D 3 500 na i oh (2) i f = 0ma, v cc = v o = 15v D D 5 high level output current i oh i f = 0ma, v cc = 15v v o = 15v, ta = 70c D D 50 a detector high level supply voltage i cch i f = 0ma, v cc = 15v D 0.01 1 a current transfer ratio i o / i f i f = 16ma, v cc = 4.5v v o = 0.4v 20 40 D % low level output voltage v ol i f = 16ma, v cc = 4.5v i o = 2.4ma D D 0.4 v resistance (input output) r s r.h. 60%, v s = 500v dc (note 7) 510 10 10 14 D ? coupled capacotance (input output) c s v s = 0, f = 1mhz (note 7) D 0.8 D pf switching characteristics (ta = 25c v cc = 5v) characteristic symbol test cir cuit test condition min. typ. max. unit propagation delay time (h l) t phl D 0.2 0.8 s propagation delay time (l h) t plh 1 i f = 16ma, r l = 1.9k ? D 0.3 0.8 s common mode transient immunity at logic high output (note 8) cm h i f = 0ma, v cm = 400v p p r l = 4.1k ? 2000 10000 D v / s common mode transient immunity at logic high output (note 8) cm l 2 i f =16ma, v cm = 400v p p r l = 4.1k ? 2000 10000 D v / s (note 8) cm l is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (v o < 0.8v). cm h is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (v o < 2.0v). (note 9) maximum electrostatic discharge voltage for any pins: 100v (c = 200pf, r = 0)
TLP559 2002-09-25 4 test circuit 1: switching time test circuit test circuit 2: common mode noise immunity test circuit s) ( f t 320(v) l cm s) ( r t 320(v) h cm i f v o 0 5v 1.5v v ol 1.5v t p hl t p lh v cc = 5v v o pulse in p ut output monito r r l 6 4 3 1 5 7 pw=100s duty ratio=1 / 10 i f monitor i f 8 2 51 ? v cm 400v v o (i f =0ma) v o (i f =16ma) 0v 5v 2v 0.8v v ol 10% 90% t f t r v cc =5v v o output monito r r l 6 4 3 1 5 7 i f 8 2 v cm pulse g enerato r z o =50
TLP559 2002-09-25 5 forward voltage v f (v) i f ? v f forward current i f (ma) 100 1.0 1 10 0.1 1.2 1.4 1.6 1.8 2.0 0.01 ta = 25c 50 30 5 3 0.5 0.3 0.05 0.03 forward voltage temperature coefficient ? v f / ? ta ( m v / ) 0.1 2.2 2.4 2.6 1.4 0.5 0.3 2.0 1.8 1.6 1 3 10 5 ? v f / ? ta ? i f forward current i f (ma) 30 ambient temperature ta ( ) high level output current i oh (a) i oh (1) ? ta 300 1 100 50 3 10 5 30 0.6 160 120 80 40 0 output current i o (ma) forward current i f (ma) l o ? i f 0.1 1 3 10 0.01 0.5 0.3 0.3 0.1 0.03 130 100 50 300 10 3 5 0.05 0.5 5 v cc = 5v v o = 0.4v ta = 25c i o / i f ? i f forward current i f (ma) current transfer ratio i o / i f (%) 100 50 30 10 5 3 1 0.3 1 0.5 3 10 30 50 v cc = 5v v o = 0.4v 5 ambient temperature ta ( ) normalized i o / i f i o / i f ? ta 60 40 0 20 20 40 0.2 0 80 0.6 0.4 0.8 1.2 1.0 100 normalized to : i f = 16ma v cc = 4.5v v o = 0.4v ta = 2 5 c ta = ? 25c 25c 100c
TLP559 2002-09-25 6 t phl , t plh ? r l propagation delay time t p lh, t p hl (s) load resistance r l (k ) 5 3 1 0.5 0.3 0.1 30 1 3 10 50 100 5 t p lh t p hl i f = 16ma v cc = 5v ta = 25c output voltage v o (v) output current i o (ma) i o ? v o 5 4 2 3 0 1 10 8 0 6 4 2 6 7 v cc = 5v ta = 25c 15m a 30m a 25ma 20ma 10ma i f =5ma forward current i f (ma) output voltage v o (v) v o ? i f 20 16 812 0 4 5 4 0 3 2 1 24 ta = 2 5 v cc =5v r l v o i f r l =2k 3.9k 10k
TLP559 2002-09-25 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intelle monit e 000707ebc restrictions on product use
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