? 2000 ixys all rights reserved 1 - 2 vgo 36 features ? package with dcb ceramic base plate isolation voltage 3000 v~ planar passivated chips low forward voltage drop leads suitable for pc board soldering applications supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors advantages easy to mount with two screws space and weight savings improved temperature and power cycling capability small and light weight data according to iec 60747 refer to a single diode/thyristor unless otherwise stated for resistive load at bridge output. ixys reserves the right to change limits, test conditions and dimensions. i dav = 36 a v rrm = 800-1600 v symbol test conditions maximum ratings i dav t h = 85c, module 36 a i davm module 40 a i frms , i trms per leg 31 a i fsm , i tsm t vj = 45c; t = 10 ms (50 hz), sine 320 a v r = 0 v t = 8.3 ms (60 hz), sine 350 a t vj = t vjm t = 10 ms (50 hz), sine 280 a v r = 0 v t = 8.3 ms (60 hz), sine 310 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 500 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 520 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 390 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 400 a 2 s (di/dt) cr t vj = 125c repetitive, i t = 50 a 150 a/ s f = 50 hz, t p = 200 s v d = 2/3 v drm i g = 0.3 a, non repetitive, i t = 1/2 i dav 500 a/ s di g /dt = 0.3 a/ s (dv/dt) cr t vj = t vjm ; v dr = 2/3 v drm 1000 v/ s r gk = ; method 1 (linear voltage rise) v rgm 10 v p gm t vj = t vjm t p = 30 s 10 w i t = i tavm t p = 500 s 5w t p = 10 ms 1w p gavm 0.5 w t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m4) 1.5 - 2 nm 14 - 18 lb.in. weight typ. 18 g single phase rectifier bridge v rsm v rrm type v dsm v drm vv 900 800 vgo 36-08io7 1300 1200 vgo 36-12io7 1500 1400 vgo 36-14io7 1700 1600 vgo 36-16io7 h n k d g a 002 preliminary data
? 2000 ixys all rights reserved 2 - 2 dimensions in mm (1 mm = 0.0394") symbol test conditions characteristic values i r , i d v r = v rrm ; v d = v drm t vj = t vjm 5ma t vj = 25 c 0.3 ma v t , v f i t , i f = 45 a; t vj = 25 c 1.45 v v t0 for power-loss calculations only (t vj = 125 c) 0.85 v r t 13 m v gt v d = 6 v; t vj = 25 c 1.0 v t vj = -40 c 1.2 v i gt v d = 6 v; t vj = 25 c 65 ma t vj = -40 c 80 ma t vj = 125 c 50 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.2 v i gd t vj = t vjm ;v d = 2/3 v drm 5ma i l i g = 0.3 a; t g = 30 s; t vj = 25 c 150 ma di g /dt = 0.3 a/ s; t vj = -40 c 200 ma t vj = 125 c 100 ma i h t vj = 25 c; v d = 6 v; r gk = 100 ma t gd t vj = 25 c; v d = 1/2 v drm 2 s i g = 0.3 a; di g /dt = 0.3 a/ s t q t vj = 125 c, i t = 15 a, t p = 300 s, v r = 100 v typ. 150 s di/dt = -10 a/ s, dv/dt = 20 v/ s, v d = 2/3 v drm r thjc per thyristor (diode); dc current 1.4 k/w per module 0.35 k/w r thjk per thyristor (diode); dc current 2.0 k/w per module 0.5 k/w d s creepage distance on surface 12.6 mm d a creepage distance in air 6.3 mm a max. allowable acceleration 50 m/s 2 fig. 1 gate trigger range fig. 2 gate controlled delay time t gd 1 10 100 1000 0.1 1 10 i g v g ma 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c v 4: p gav = 0.5 w 5: p gm = 1 w 6: p gm = 10 w i gd , t vj = 125 c 4 2 1 5 6 10 100 1000 1 10 100 1000 s t gd t vj = 25 c typ. limit ma i g 3 vgo 36 002
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