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1/24 features applications ? wide input voltage range 4.5v to 40v ? pfm regulator up to 1.33mhz ? up to >92% efficiency ? very low 8a sleep mode current ? ultra low 12a standby current ? 100% duty cycle capability ? small qfn20l4 lead-less package ? tssop16 package ? aec-q100 qualification ? junction temperature range -40c to +150c ? micro controller systems ? automotive telematics, dashboards ? partial networking ? peripheral control systems general description the e522.01/02/03/04/05/06/07/08/09 product family provides ultra low quiescent current step down dc/dc converters with integrated power mosfet. the pfm (pulse frequency modulation) regulator allows outstanding fast line- and load response time, stability and high effciency over the full load current range. the integrated idle detection assures an ultra low idle cur - rent and high effciency with low load currents down to <100a for the completely powered application. a power-good signal is provided by a high-voltage open- drain low-side switch. the e522.0x buck converter accommodates to common single supply micro controller applications. low exter - nal component count and small qfn20l4 / tssop16 package allow compact pcb designs. ordering information continued at the end of this document. product id v out i out ambient temp. range e522.06 1.5 to 40v 350ma -40c to +125c e522.07 5v 1a -40c to +125c e522.08 3.3v 1a -40c to +125c e522.09 1.5 to 40v 1a -40c to +125c product id v out i out ambient temp. range e522.01 5v 500ma -40c to +125c e522.02 3.3v 500ma -40c to +125c e522.03 5v 350ma -40c to +125c e522.04 3.3v 350ma -40c to +125c e522.05 1.5 to 40v 500ma -40c to +125c ordering information ocp e522.0x sense l lxt d r c in c out pgood feedback for e522.05/06/09 out lxt vin agnd on pgnd pg in on r sense1 r sense2 c sense elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current pfm step down converters e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 preliminary information - may 29, 2012
2/24 1 functional diagram figure 1: block diagram 2 pinout figure 2: package pinout, transparent top view, not to scale. 2.1 pin confguration qfn20l4 / tssop16 qfn20l4 agnd nc nc nc ocp nc nc nc nc nc lxt pgnd nc sense sense vin nc on nc pgood 1 2 3 4 5 15 14 13 12 11 6 7 8 9 10 20 19 18 17 16 21 tssop16 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 nc vin nc on nc pgood nc agnd nc lxt nc pgnd sense nc nc ocp ocp resistor driver internal driver transistor e522.0x lxt vin driver active sense oc off idle pfm controller agnd ocp idle detector idle power good comparator vout comparator pgnd sense internal supply vin on pgood ovt enable e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family e522.0x e522.0x
3/24 pin name type 1) description remark qfn20l4 tssop16 1 2 vin hv s high-voltage supply input bypass to gnd with a low esr ca - pacitance >20f 2 1 nc - not connected open or gnd 3 4 on hv ai high-voltage input to enable converter 4 3 nc - not connected open or gnd 5 6 pgood hv ao high-voltage capable low-side open-drain output for power good fag 6 8 agnd s signal ground connection 7 5 nc - not connected open or gnd 8 7 nc - not connected open or gnd 9 10 nc - not connected open or gnd 10 9 ocp ai over-current protection resistor input, con - nect to ground via resistor 11 - sense ai feedback input for converter regulation, connect to output voltage redundant, con - nect both sense pins 12 12 sense ai feedback input for converter regulation, connect to output voltage redundant, con - nect both sense pins 13 11 nc - not connected open or gnd 14 13 pgnd s power ground connection 15 15 lxt hv ao integrated high-side switch output, con - nect freewheeling diode and inductor to this pin 16 14 nc - not connected open or gnd 17 16 nc - not connected open or gnd 18 - nc - not connected open or gnd 19 - nc - not connected open or gnd 20 - nc - not connected open or gnd 21 - ep - exposed die pad connect to gnd 1) d = digital, a = analog, s = supply, hv = high voltage (see max. ratings), i = input, o = output note: pins with identical names have to be connected. 2.2 pin description table 1: pin description e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
4/24 3 absolute maximum ratings stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. these are stress ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document is not implied. exposure to absolute maximum rated conditions for extended periods may affect device reliability. all voltages referred to v gnd . currents fowing into terminals are positive, those drawn out of a terminal are negative. description condition symbol min max unit supply voltage at pin vin v vin -0.3 40 v voltage at pin on v on -0.3 40 v voltage at pin pgood v pgood -0.3 40 v current at pin pgood i pgood 0 5 ma voltage at pin sense v sense -0.3 6 v voltage at pin ocp v ocp -0.3 0.8 v voltage at pin lxt v lxt -10 v in +0.3 v power dissipation (e522.01-06) p tot 500 mw power dissipation (e522.07-09) p tot 1 w storage temperature t stg -50 +150 c 4 esd protection description condition symbol min max unit esd hbm protection at pin vin 1) v esd(hbm) 3 kv esd hbm protection at all other pins 1) v esd(hbm) 2 kv esd cdm protection at all pins 2) v esd(cdm) 500 v esd cdm protection at corner pins 2) v esd(cdm)c 750 v 1) according to aec-q100-002 (hbm) chip level test 2) according to aec-q100-011 (cdm) chip level test 5 recommended operating conditions description condition symbol min max unit junction temperature t j -40 +150 c ambient temperature t amb -40 +125 c supply voltage at pin vin v vin 4.5 1) 40 v 1) for v vin < v out , e522.0x enters 100% duty cycle mode e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
5/24 6 electrical characteristics description condition symbol min typ max unit supply sleep mode quiescent current v on = 0; non-switching i vin,q,slp 8 a active mode quiescent current v on = v vin > 8v; i out < 100a i vin,q 12 a active mode quiescent current v on = v vin l xt driver off i vin,q 150 a input resistance at pin on v on = v vin = 14v i on 7 m? threshold voltage at pin on v vin > 4.5v v on,th 1.40 1.48 1.56 v vin undervoltage lockout v vin rising v vin,uv 3.5 4.2 v output current limit programming output voltage at ocp 24k ? r ocp 60k ? v ocp 500 mv ocp selection resistor r ocp 24 60 k? load capacitance at ocp c ocp 100 pf e522.01 output output regulation threshold 1) i out = 500ma v vin = 14v v out 4.8 5.0 5.2 v on resistance at lxt v vin = 14v r ds(on) 0.7 1.5 ? over-current detection r ocp = 24k ? 2) i o cp, 24k ? 740 830 920 ma r ocp = 60k ? 2) i o cp,60k ? 300 350 400 ma e522.02 output output regulation threshold 1) i out = 500ma v vin = 14v v out 3.2 3.33 3.46 v on resistance at lxt v vin = 14v r ds(on) 0.7 1.5 ? overcurrent detection r ocp = 24k ? 2) i o cp, 24k ? 740 830 920 ma r ocp = 60k ? 2) i o cp,60k ? 300 350 400 ma e522.03 output output regulation threshold 1) i out = 350ma v vin = 14v v out 4.8 5.0 5.2 v on resistance at lxt v vin = 14v r ds(on) 1.1 2.5 ? overcurrent detection r ocp = 24k ? 2) i o cp, 24k ? 490 550 610 ma r ocp = 60k ? 2) i o cp,60k ? 190 230 270 ma e522.04 output output regulation threshold 1) i out = 350ma v vin = 14v v out 3.2 3.33 3.46 v on resistance at lxt v vin = 14v r ds(on) 1.1 2.5 ? overcurrent detection r ocp = 24k ? 2) i o cp, 24k ? 490 550 610 ma r ocp = 60k ? 2) i o cp,60k ? 190 230 270 ma (v vin = 4.5v to 40v, t amb = -40c to +125c, unless otherwise noted. typical values are at v vin = 14v and t amb = +25c. positive currents fow into the device pins.) 1) given value is switching threshold at pin sense, for v vin < v out regulator provides 100% conductance mode 2) measured at v vin = 14v e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
6/24 electrical characteristics (continued) (v vin = 4.5v to 40v, t amb = -40c to +125c, unless otherwise noted. typical values are at v vin = 14v and t amb = +25c. positive currents fow into the device pins.) description condition symbol min typ max unit e522.05 output output regulation threshold 1) i out = 500ma v vin = 14v v sense 1.416 1.475 1.534 v on resistance at lxt v vin = 14v r ds(on) 0.7 1.5 ? over-current detection r ocp = 24k ? 2) i o cp, 24k ? 740 830 920 ma r ocp = 60k ? 2) i o cp,60k ? 300 350 400 ma e522.06 output output regulation threshold 1) i out = 350ma v vin = 14v v sense 1.416 1.475 1.534 v on resistance at lxt v vin = 14v r ds(on) 1.1 2.5 ? overcurrent detection r ocp = 24k ? 2) i o cp, 24k ? 490 550 610 ma r ocp = 60k ? 2) i o cp,60k ? 190 230 270 ma e522.07 output output regulation threshold 1) i out = 1a v vin = 14v v out 4.8 5.00 5.2 v on resistance at lxt v vin = 14v r ds(on) 0.44 0.75 ? over-current detection r ocp = 24k ? 2) i o cp, 24k ? 1.3 1.45 1.6 a r ocp = 60k ? 2) i o cp,60k ? 0.5 0.6 0.7 a e522.08 output output regulation threshold 1) i out = 1a v vin = 14v v out 3.2 3.33 3.46 v on resistance at lxt v vin = 14v r ds(on) 0.44 0.75 ? overcurrent detection r ocp = 24k ? 2) i o cp, 24k ? 1.3 1.45 1.6 a r ocp = 60k ? 2) i o cp,60k ? 0.5 0.6 0.7 a e522.09 output output regulation threshold 1) i out = 1a v vin = 14v v sense 1.416 1.475 1.534 v on resistance at lxt v vin = 14v r ds(on) 0.44 0.75 ? overcurrent detection r ocp = 24k ? 2) i o cp, 24k ? 1.3 1.45 1.6 a r ocp = 60k ? 2) i o cp,60k ? 0.5 0.6 0.7 a 1) given value is switching threshold at pin sense, for v vin < v sense regulator provides 100% conductance mode 2) measured at v vin = 14v e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
7/24 electrical characteristics (continued) (v vin = 4.5v to 40v, t amb = -40c to +125c, unless otherwise noted. typical values are at v vin = 14v and t amb = +25c. positive currents fow into the device pins.) description condition symbol min typ max unit switching switching frequency f s 0 1.75 mhz minimum lxt on time i out < i ocp t lxt (on) 260 ns i out i ocp t lxt (on) 100 ns minimum lxt off time pgood = '1' t lxt (off) 520 ns i out i ocp; v sense > 1.2v t lxt (off) 1330 ns i out i ocp; v sense < 1.0v t lxt (off) 2450 ns power good detector power good detection threshold, rising edge v sense,th(lh) / v out(nom) 92.5 % power good detection threshold, falling edge v sense,th(hl) / v out(nom) 90 % output voltage at pin pgood v sense < v sense,th(hl) i pgood = 2ma v pgood 0.2 0.4 v leakage at pin pgood v sense = v out,nom v pgood = 5v i pgood,lk 3 a idle detector idle detection delay no switching t idle 70 110 150 s average lxt duty cycle for idle discontinuous operation d idle 1.38 % wake-up threshold during idle relative to nominal v out in % v sense,wu 95 % wake-up delay after idle v sense < v sense,wu t del,active 10 25 s e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
8/24 7 typical operating characteristics diagrams showing typical characteristics at v vin =14v and t amb =25, unless otherwise noted eff_demo_mawe seite 1 0 50 100 150 200 250 300 350 400 450 500 550 60 65 70 75 80 85 90 95 100 e522.01 efficiency vs loadcurrent (vin 7v, 14v, 24v) eff,7 v eff,1 4 v eff,2 4 v loadcur rent / ma e f f i c i e n c y / % (continuous conduction mode) f_lxt_v seite 1 1.0 1.5 2.0 2 .5 3 .0 3 .5 4.0 4.5 5.0 5.5 6.0 6.5 7 .0 7 .5 8.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 operating frequency vs . norm alized vin/vout vin/vout ratio f _ l x t / m h z v_switch5v_t seite 1 -40 -20 0 20 40 60 80 100 120 140 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5 v s ense threshold vs. temperature temp. / c v_swicth / v (for v vin 9/24 i_sleep_idle_t seite 1 - 5 0 .0 - 3 0 .0 - 1 0 .0 10.0 3 0 .0 5 0 .0 7 0 .0 9 0 .0 110.0 130.0 150.0 0 3 6 9 12 15 18 21 24 27 30 supply current vs. temperature (sleep & idle mode) i_ vin ,sl eep i_ vin ,id l e temp. / c i _ v i n / a n / a i_ocp1_t seite 1 - 4 0 .0 - 2 0 .0 0 .0 2 0 .0 4 0 .0 60.0 8 0 .0 100.0 120.0 140.0 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 current limitation vs. temperature (500ma device) i_ocp,24kohm i_ o c p,6 0 k o h m t emp. / c i _ l x t / m a i_ocp2_t seite 1 -40.0 - 2 0 .0 0 .0 2 0 .0 4 0 .0 6 0 .0 8 0 .0 100.0 120.0 140.0 150 200 250 300 350 400 450 500 550 600 650 current limitation vs. temperature (350ma device) i_ocp,24kohm i_ o c p,6 0 k o h m temp. / c i _ l x t / m a t_wakeup_t seite 1 -40 -20 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20 re-enable delay vs. temperature (idle-to-active) temp. / c t _ d e l / s i_active_t seite 1 -40 -20 0 20 40 60 80 100 120 140 100 120 140 160 180 200 220 240 260 supply current vs. temperature (active mode) temp. / c i _ v i n / a - 4 0 . 0 - 2 0 . 0 0 . 0 2 0 . 0 4 0 . 0 6 0 . 0 8 0 . 0 1 0 0 . 0 1 2 0 . 0 1 4 0 . 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 1 1 0 0 1 2 0 0 1 3 0 0 1 4 0 0 1 5 0 0 1 6 0 0 c u r r e n t l i m i t a t i o n v s . t e m p e r a t u r e ( 1 a d e v i c e ) i _ o c p , 2 4 k o h m i _ o c p , 6 0 k o h m t e m p . / c i _ l x t / m a 4 . 0 8 . 0 1 2 . 0 1 6 . 0 2 0 . 0 2 4 . 0 2 8 . 0 3 2 . 0 3 6 . 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 1 1 0 0 1 2 0 0 1 3 0 0 1 4 0 0 1 5 0 0 1 6 0 0 c u r r e n t l i m i t a t i o n v s . v i n v o l t a g e ( 2 4 k o h m @ o c p ) i _ o c p , 3 5 0 m a i _ o c p ,5 0 0 m a i _ o c p , 1 a v i n / v i _ l x t / m a e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
10/24 v_on_t seite 1 - 4 0 .0 - 2 0 .0 0 .0 2 0 .0 4 0 .0 6 0 .0 8 0 .0 100.0 120.0 140.0 1.42 1.44 1.46 1.48 1.50 1.52 enable threshold at on vs temperature enable d is able temp. / c v _ o n / v r_on_v seite 1 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 on pulldown resistance vs on voltage v_on / v r _ o n , p d / m o h m t_gatedel_v seite 1 4 .0 6 .0 8 .0 1 0 .0 1 2 .0 1 4 .0 1 6 .0 1 8 .0 2 0 .0 2 2 .0 2 4 .0 3 0 .0 4 0 .0 5 0 .0 6 0 .0 7 0 .0 8 0 .0 9 0 .0 100.0 110.0 120.0 130.0 140.0 150.0 propagation delay sense to lxt vs vin voltage sense,rise sense,fall supply voltage / v t _ d e l a y / n s - 4 0 . 0 - 2 0 . 0 0 . 0 2 0 . 0 4 0 . 0 6 0 . 0 8 0 . 0 1 0 0 . 0 1 2 0 . 0 1 4 0 . 0 0 . 1 0 . 3 0 . 5 0 . 7 0 . 9 1 . 1 1 . 3 1 . 5 1 . 7 1 . 9 i n t e r n a l f e t o n - r e s i s t a n c e v s . t e m p e r a t u r e 3 5 0 m a r a t e d 5 0 0 m a r a t e d 1 a r a t e d t e m p . / c r _ l x t , o n / o h m -40 -20 0 20 40 60 80 100 120 140 2. 80 3. 00 3. 20 3. 40 3. 60 3. 80 4. 00 4. 20 typ. vin undervoltage lockout (vs. temperature) temp. / c v_underv oltage / v e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
11/24 8 functional description 8.1 general description 8.2 pulse frequency modulated converter e522.0x product family is a fxed output voltage step-down converter family intended for current-sensitive auto - motive and general battery driven applications, featuring open loop stability and short current limitation for the integrated driver transistor. high operating frequency allows the use of small-sized external components. integrated idle detection provides very low standby currents, signifcantly reducing the applications total current consumption. if the application supplied by e522.0x is set into low-current mode (typ. << 1ma, see 8.3), current consumption at vin is adapted to typical 12a only. the pulse frequency modulation (pfm) scheme does not need a clock signal for operation, providing minimum on/ off time regulation for the internal switch. furthermore, the pfm scheme allows fastest transient line and load re - sponses without the need for external compensation networks. adjustable internal current measurement allows optimal adaption to the inductor without the need for a shunt resistor. the lxt switch control signal is based on a combination of output voltage v sense , input voltage v vin and measured switch current. it provides adaptive frequency in the range of 0hz up to typ. 1.33mhz as seen in typical perform - ance fgures. to avoid unnecessary switching, a minimum on time of typ. 260ns and off time of 520ns is used. on time will be reduced below 260ns if over-current is detected. off time will automatically be increased in length to limit current fow during start-up or short circuit to gnd at pin lxt or vout. the fgure below shows the typical normalized operating frequency in continuous conduction mode: pin on load condition load condition internal signal idle mode v out i vin v on < v on,th sleep 0v 8a v on > v on,th nominal load d > d idle 0 normal v out,nom 150a v on > v on,th reduced load << 1 m a d < d idle 1 idle v out,nom - (0%... -5%) 12a e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
12/24 8.3 idle detection idle operation basically is a sequence of standby periods followed by recharge cycles. during idle the application is supplied by the output capacitance. the reference is switched to typ. 95% of nominal value, at which the con - verter will be reactivated to high power operation. in this way, light load currents are compressed to short recharge phases, during which a high effciency can be reached. e522.0x automatically switches between idle and active if no external load is applied to e522.0x. the criterion for the decision is that either no switching activity occurred for longer than typ. 110s or the duty cycle of the con - verter falls below a limit of typically 1:72. (see fgure 4) f_lxt_v seite 1 1.0 1.5 2.0 2 .5 3 .0 3 .5 4.0 4.5 5.0 5.5 6.0 6.5 7 .0 7 .5 8.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 operating frequency vs . norm alized vin/vout vin/vout ratio f _ l x t / m h z figure 3: operating frequency vs normalized vin/vout ratio figure 4: behaviour in idle mode v o u t r e f s w i t c h 1 2 3 4 5 v o u t r e f s w i t c h 1 2 4 5 1 either >110s no switch - ing or duty cycle falls below <1:72 the ic enters idle mode 2 in idle mode the reference is reduced by 5% 3 when vout reaches lower limit, switching is activated and reference is set to nom - inal value 4 after 110s time-out or dc <1:72 => e522.0x enters idle mode again 5 normal mode is entered again when load is back to nominal range e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
13/24 figure 5: typical operating circuit diagram table 2: external components 9 typical operating circuit agnd e522.0x l1 d1 r3 c3 vout lxt vin on opt. emc filter l2 d2 c2 r2 c1 c4 c5 c6 in r1 r6 sense sense vout ocp pgood pgnd pgood gnd external programming for e522.05/06/09 r5 r4 c7 symbol min typ max unit description r1 3.3 k? pull up resistor for pgood r2 24 60 k? ocp confguration resistor r3 3.3 k? optional resistor for connection to vin r4 30 1) k? resistor for output voltage programming r5 30 k? resistor for output voltage programming r6 0.2 ? optional esr-equivalent resistor c1 47 100 f output flter capacitor, low esr c2 33 100 nf output flter capacitor, low esr, low esl type c3 20 33 f input flter capacitor c4 220 nf input flter capacitor, low esr, low esl type c5 100 nf emc capacitor; low esr, low esl type c6 1 nf emc capacitor; low esr, low esl type c7 optional ac-coupling capacitor (see chapter 9.2.5) l1 18 33 82 h inductor l lxt @ e522.01-06 l1 10 22 82 h inductor l lxt @ e522.07-09 l2 emc ferrite e.g. wrth 742-792-118 d1 freewheeling diode for lxt, preferred vishay ss14 d2 optional reverse polarity protection diode 1) select for v out according to r 4 = r 5 ? ( v out ? v sense v sense ) e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
14/24 9.2 application / implementation hints 9.2.1 maximum input voltage in case of adjustable output voltage (e522.05/06/09) the following chapter will give additional recommendations and advices for the implementation of e522.0x, giving starting values for components during prototyping. the maximum input voltage is defned by the minimum t on,min (during over-current limitation) and the requested output voltage. the following diagram shows the recommended area for the input voltage. if the input voltage is higher than recommended, due to transient effects the maximum current in the inductor may exceed the confg - ured over-current limitation during start-up or in case of short circuit. 1 , 5 3 4 , 5 6 7 , 5 9 1 0 ,5 1 2 1 3 ,5 1 5 1 6 ,5 1 8 1 9 ,5 2 1 2 2 ,5 2 4 2 5 ,5 2 7 2 8 ,5 3 0 3 1 ,5 3 3 3 4 ,5 3 6 3 7 ,5 3 9 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 2 6 2 8 3 0 3 2 3 4 3 6 3 8 4 0 v o u t [ v ] v i n [ v ] v o u t = r e que s t e d v o u t i l l x t > i o cp r e c o m m e n d e d a r e a v o u t = r e que s t e d v o u t i l < i o cp v o u t v i n ( 1 0 0 % d ut y - c y c l e ) figure 6: maximum recommended vin e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
15/24 9.2.2 maximum output current e522.05/06/09 e522.0x limits the inductor peak current. lower end of inductor ripple current depends on t off,min , the inductance value and the output voltage. the maximum available output current is less or equal to the average current fow - ing in the inductance. the following graph visualizes the relation between these parameters. for example, with an inductor of 18 h and an output voltage of 12v, the minimum available output current is 690ma. for example, with an inductor of 33 h and an output voltage of 20v, the minimum available output current is 295ma. 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 2 6 2 8 3 0 3 2 3 4 3 6 3 8 4 0 0 100 200 300 400 500 600 700 800 900 1000 m a x i mu m i ou t l = 1 0 h l = 1 8 h l = 3 3 h l = 5 2 h l = 6 3 h l = 8 2 h l = 1 0 0 h v o u t ( v ) i o u t ( m a ) 0 5 10 15 20 25 30 35 40 0 50 10 0 15 0 20 0 25 0 30 0 35 0 40 0 45 0 50 0 m a x im u m i o u t l= 1 8h l= 3 3h l= 5 2h l= 6 3h l= 8 2h l= 1 00h vo u t (v) i o u t (m a) figure 7: maximum output current vs. ouput voltage (1a / e522.09) figure 8: maximum output current vs. ouput voltage (500ma / e522.05) e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
16/24 9.2.3 l lxt inductor selection 0 5 10 15 20 25 30 35 40 0 50 10 0 15 0 20 0 25 0 30 0 35 0 m a x im u m i o u t l= 1 8uh l= 3 3uh l= 5 2uh l= 6 3uh l= 8 2uh l= 1 00u h vo u t (v) i o u t (m a) for example, with an inductor of 33h and an output voltage of 20v, the minimum available output current is 175ma. figure 8: maximum output current vs. ouput voltage (350ma / e522.06) for a given application (in continuous conducting mode), it is either recommended to choose an inductance value that is suitable for 15% current ripple at the typical operating frequency or to use the following equations. depending on v vin to v out ratio, usually two equations describe the maximum peak-to-peak current ripple in the inductor l lxt . it can either be calculated from the maximum input voltage at vin (v vin,max,app ) a) or by the following equation (with v diode being the forward voltage drop of the free-wheeling diode) b) take the higher result of both equations into account during choice of the external capacitors esr (see chapter 9.2.4). the minimum ripple may either occur at the maximum operation frequency or at the lowest input voltage that is required for the application. in most cases, the current ripple at peak-operating-frequency can also be calculated by equation b) above. to choose a suffciently high saturation current for the inductor l lxt , consider - the maximum application load current plus half of the maximum ripple current calculated above and - the confgured current limitation derived from r ocp (to avoid degradation or other effects due to saturation of the inductor core - depending on the magnetic core material) in general an additional saturation margin of >25% for the inductor current rating is recommended for transient effects, especially at extreme v vin to v out voltage ratios. dc resistance of l lxt (referred here as r lxt,dc ) reduces effciency and contributes to the losses in the inductor (com - bined with ac losses which may arise due the use of high frequency operation). a dc resistance <0.5? is recommend - ed for e522.01-06 (<0.25? for e522.07-09). at a given load current i load , resistance affects minimum input voltage re - quired to regulate v out in the following way i ripple , lxt , pp1 = t on , min ? ( v vin , max , app ? v out , nom ) l lxt i ripple , lxt , pp2 = t off , min , nom ? ( v out , nom + v diode ) l lxt v , mi n in = v ou t , no m + i lo ad + ( r ds ( on ) + r lx t , dc ) e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
17/24 9.2.6 rectifcation- / freewheeling diode selection 9.2.5 r sense , c sense selection for adjustable e522.05/06/09 9.2.4 c out capacitor selection the free-wheeling diode must have a low forward voltage (to increase effciency) as well as a very low reverse re - covery time of typically 10ns. in general, a fast schottky type diode is recommended. high parasitic capacitance as well as long reverse recovery time may cause additional radiated emission at lxt. parasitic capacitance of this diode decreases the overall effciency and causes current spikes when the lxt driver turns on. during idle, consider the leakage of the free-wheeling diode at nominal converter output voltage which will con - tribute to the overall current consumption (see idle adaption, chapter 9.2.9). in general, a bipolar diode can provide lower leakage current and parasitic capacitance, but may also have a negative impact on effciency due to higher forward voltage drop. reverse recovery time of the diode must be taken into account. the resistors r sense1 and r sense2 have to be chosen high enough to avoid a reduction of the effciency. a typical cur - rent of 50 a is recommended to avoid sensitivity to noise. the capacitor c sense helps to produce a correct ripple voltage at sense pin. without enough ripple at sense pin, the regulation will not be optimal and you could observe burst pulses at lxt pin. when the ripple voltage is high enough, you should see a stable operating frequency. to choose c sense , start without any capacitor and increase the value until you are satisfed with the regulation. during nominal operation electrical serial resistance (esr) of the capacitor is important to generate a minimum output voltage ripple of 10mv to 100mv. this ripple is necessary to provide a proper regulation information for e522.0x. it depends on peripheral elements chosen (l lxt and c out ) and their parasitic behaviour as explained fur - ther on. the esr of the capacitor c out (named r esr,cout, see operating circuit r6) must be high enough to ensure a voltage rip - ple for v out to provide high-frequency switching. the ripple voltage can basically be calculated using the inductor current ripple (see chapter 9.2.3) by electrical serial inductance should be kept as low as possible, what can be achieved by placing a parallel ceramic type capacitor of <100nf (typ. 33nf). during idle, the application is supplied by the output capacitor c out . the capacitance, which is necessary to power the application until e522.0x fully wakes up, can be calculated using the maximum load current step (i load,max ) and a maximum tolerable voltage drop (u drop, m a x ) in the following way: for example, assuming a maximum load step of 350ma, a tolerable voltage drop of 120mv and r esr,cout being 120m? the output capacitance should be chosen >112f. for proper active operation, it is necessary to choose capacitance values >22f at v out . take into account, that many capacitor types show a strong temperature and voltage dependency, or may be sensi - ble to high peak currents. make sure, that at extreme temperatures and voltages the capacitance value is reached. for automotive environments capacitors of x7r material (or better) may be necessary. v ripple , out = r esr , cout ? i ripple , lxt , pp c out = i load , max ? 2 5 s u drop , max ? r esr , cout ? i load , max e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
18/24 9.2.9 idle adaption options idle / active state detection can be adapted to a given application by consideration of the following external in - fuences: a) during start-up, the energy within the inductor (approximately 0.5 x l lxt x i lim ) 2 has to be consumed by the load within the idle detection time-out (to stay in active mode). it is proportional to the inductance l lxt and to the square of confgured ocp current limit. b) at nominal operation, the power which is transferred to the output in discontinuous operation depends on the inductance at l lxt , the current which is build up during t on,min and the duty-cycle idle condition. this detection mechanism allows to shift the detection threshold proportional to 1/l lxt . note, that the output power in this case also depends on the square of charging voltage v vin-vout , which may require to adapt l lxt to the typical application input voltage. c) in general, cross-coupling between high voltage switching of lxt and input sense is to be avoided. in case that practically it may not be completely avoidable, a third effect based on the amount of coupling must be considered. distortions can lead to self-excitation of the regulator, charging the output until the lower end of the output volt - age ripple crosses the regulation point. the average of the output voltage ripple (1/2 for triangular ripple) has to be discharged by the load before a time-out is detected (typ. 110s - to stay in active mode). 9.2.7 over-current confguration at ocp 9.2.8 vin capacitor selection vin input capacitance value can be chosen from an acceptable voltage ripple v vin,ripple,max (defned by the overall application requirements) together with i lim (confgured by r ocp ) and the esr of vin capacitor by both, the result of above equation, but also a minimum of 22f are to be taken into account. additionally, a paral - lel low esr and low esl ceramic capacitor type has to be placed (typ. 220nf). considerations regarding temperature and voltage dependency apply to vin capacitors as well (see chapter 9.2.4), especially voltage dependency. c vi n = i li m t on,m in v vi n , ri pple , ma x i li m r es r , c vi n to adjust the internal over-current limitation of the lxt high-side driver to a value of i lim , the resistor between ocp and gnd can be chosen by interpolation between the specifed values (in the range of 24k? to 60k?) by choice the current i lim with respect to the maximum usable current of the inductor l lxt . capacitive load at pin ocp has to be avoided due to stability reasons. it must not exceed 100pf. r ocp = i ocp ,24 k i lim ? 24k O i lim ? i ocp ,24 k e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
19/24 9.2.10 misc application remarks optional, regarding vin voltage supervision, the accurate threshold at pin on can be used to implement under- voltage lock-out for the converter, automatically switching to sleep mode if necessary. in such cases a resistive di - vider between vin and gnd, connected to on can be used. the threshold is defned by choose the divider impedance signifcantly lower than the typical input impedance of 7m? at pin on to avoid in - accuracy. note, that the divider current directly contributes to the application current consumption. for reverse polarity protection a diode (or comparable reverse voltage protection measure) for vin is recommend - ed. in emc sensitive environments additional decoupling measures at vin are recommended. v vi n , min = v on , th 1 r2 r1 product id v out i out ambient temp. range package e522.01_qfn20l4 5v 500ma -40c to +125c qfn20l4 e522.02_qfn20l4 3.3v 500ma -40c to +125c qfn20l4 e522.03_qfn20l4 5v 350ma -40c to +125c qfn20l4 e522.04_qfn20l4 3.3v 350ma -40c to +125c qfn20l4 e522.05_qfn20l4 1.5v to 40v 500ma -40c to +125c qfn20l4 e522.06_qfn20l4 1.5v to 40v 350ma -40c to +125c qfn20l4 e522.07_qfn20l4 5v 1a -40c to +125c qfn20l4 e522.08_qfn20l4 3.3v 1a -40c to +125c qfn20l4 e522.09_qfn20l4 1.5v to 40v 1a -40c to +125c qfn20l4 e522.01_tssop16 5v 500ma -40c to +125c tssop16 e522.02_tssop16 3.3v 500ma -40c to +125c tssop16 e522.03_tssop16 5v 350ma -40c to +125c tssop16 e522.04_tssop16 3.3v 350ma -40c to +125c tssop16 e522.05_tssop16 1.5v to 40v 500ma -40c to +125c tssop16 e522.06_tssop16 1.5v to 40v 350ma -40c to +125c tssop16 10 ordering information depending on choice of external components, the rectifcation / free-wheeling diode leakage current has to be taken into account, because it poses a load to e522.0x, too. if it generates suffcient switching activity to trigger the duty cycle idle condition, the converter will provide nominal output voltage. consider the leakage current of the free-wheeling diode for a reverse voltage of v out and the maximum ambient temperature. the above described measures a,b,c (in most cases choice of inductance l lxt ) can be used to adapt the applications dimensioning to this additional load. e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
20/24 11.1 package reference qfn20l4 11 package reference 11.2 package reference tssop16 the e522.0x family members are available in a pb free, rohs compliant, qfn20l4 plastic package. for dimension details refer to jedec mo-220 vggd-5. the package is classifed to moisture sensitivity level 3 (msl 3) according to jedec j-std-020c. it has been qualifed according to iec 86 part 2-20 for the following soldering profle: 1. (2005) c, dwell time (505) s 2. (2605) c, dwell time <10 s the e522.0x family members are available in a pb free, rohs compliant, tssop16 plastic package. for dimension details refer to jedec mo-153 ab. the package is classifed to moisture sensitivity level 3 (msl 3) according to jedec j-std-020c. it has been qualifed according to iec 86 part 2-20 for the following soldering profle: 1. (2005) c, dwell time (505) s 2. (2605) c, dwell time <10 s 7 0 8 0 9 0 1 0 0 1 1 0 1 2 0 1 3 0 1 4 0 0 0 , 1 0 , 2 0 , 3 0 , 4 0 , 5 0 , 6 e5 2 2 . 0 1-06 m a x . p a c k a g e p o w e r d i s s i p a t i o n m a x . d e v i c e p o w e r v s a m b i e n t t e m p e ra t u re m a x p o w e r q f n 2 0 l 4 m a x p o w e r t s s o p 1 6 m a x p o w e r t s s o p 1 6 e x t . h e a t s i n k 3 0 k / w m a x p o w e r t s s o p 1 6 e x t . h e a t s i n k 1 0 k / w am b i e n t t e m p e ra t u re [ c ] po w e r [ w ] figure 9: package power dissipation e522.01-06 e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
21/24 11.3 marking top side figure 10: package power dissipation e522.07-09 70 80 90 100 110 120 130 140 0,4 0,5 0,6 0,7 0,8 0,9 1 1,1 1,2 e522.07/08/09 max. package power dissipation device power vs ambient temperature max pow er qfn20l4 ambient temperature [c] package power dissipation [w] ? elmos logo ? 52201 ? xxxsl ? ywwr@ signature explanation 52201 elmos project number a elmos project revision code xxx production lot number s assembler code l production line code yww year and week of assembly r mask revision code @ elmos internal code e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
22/24 11.4 package outline qfn20l4 p ackage o utline s pecification date : 05.01.2012 author: asto 20 lead quad flat non leaded package (qfn20l4) qm-no.: 08sp0689.02 package outline and dimensions are according jedec mo-220 k, variant vggd-5 description symbol mm inch min typ max min typ max package height a 0.80 0.9 0 1.00 0.031 0.035 0.039 stand off a1 0.00 0.02 0.05 0.000 0.00079 0.002 thickness of terminal leads, including lead finish a3 -- 0.20 ref -- -- 0.0079 ref -- width of terminal leads b 0.18 0.25 0.30 0.0071 0.0098 0.012 package length / width d / e -- 4.00 bsc -- -- 0.157 bsc -- length / width of exposed pad d2 / e2 2.50 2.65 2.80 0.098 0.104 0.110 lead pitch e -- 0.50 bsc -- -- 0.020 bsc -- length of terminal for soldering to substrate l 0.35 0.40 0.45 0.014 0.016 0.018 number of terminal positions n 20 20 note: the mm values are valid, the inch values contains rounding errors note 1: for assembler specific pin1 identification please see qm-document 08sp0363.xx (pin 1 specification) page 1 of 1 e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
23/24 11.5 package outline tssop16 p ackage o utline s pecification date : 04.01.2012 author: asto 16 lead thin shrink small outline package (tssop16) qm-no.: 08sp0669.05 package outline and dimensions are according jedec mo-153 f, variant ab. description symbol mm inch min typ max min typ max package height a -- -- 1.20 -- -- 0.047 stand off a1 0.05 -- 0.15 0.002 -- 0.006 package body thickness a2 0.80 1.00 1.05 0.031 0.039 0.041 width of terminal leads, inclusive lead finish b 0.19 -- 0.30 0.007 -- 0.012 thickness of terminal leads, inclusive lead finish c 0.09 -- 0.20 0.004 -- 0.008 package length d 4.90 5.00 5.10 0.193 0.197 0.201 package width e 6.40 bsc 0.252 bsc package body width e1 4.30 4.40 4.50 0.169 0.173 0.177 lead pitch e 0.65 bsc 0.026 bsc length of terminal for soldering to substrate l 0.45 0.60 0.75 0.018 0.024 0.030 angle of lead mounting area phi [] 0 -- 8 0 -- 8 mold release angle phi1 [] 12 ref 12 ref number of terminal positions n 16 16 note: the mm values are valid, the inch values contains rounding errors note 1: for assembler specific pin1 identification please see qm-document 08sp0363.xx (pin 1 specification) page 1 of 1 e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 preliminary information - may 29, 2012 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. low quiescent current step down converter family
24/24 e522.01, e522.02, e522.03, e522.04, e522.05, e522.06, e522.07, e522.08, e522.09 elmos semiconductor ag data sheet qm-no.: 25ds0064e.01 warning C life support applications policy elmos semiconductor ag is continually working to improve the quality and reliability of its products. neverthe - less, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vul - nerability to physical stress. it is the responsibility of the buyer, when utilizing elmos semiconductor ag products, to observe standards of safety, and to avoid situations in which malfunction or failure of an elmos semiconduc - tor ag product could cause loss of human life, body injury or damage to property. in development your designs, please ensure that elmos semiconductor ag products are used within specifed operating ranges as set forth in the most recent product specifcations. general disclaimer information furnished by elmos semiconductor ag is believed to be accurate and reliable. however, no responsi - bility is assumed by elmos semiconductor ag for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of elmos semiconductor ag. elmos semiconductor ag reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manu - facturability. application disclaimer circuit diagrams may contain components not manufactured by elmos semiconductor ag, which are included as means of illustrating typical applications. consequently, complete information suffcient for construction purpos - es is not necessarily given. the information in the application examples has been carefully checked and is believed to be entirely reliable. however, no responsibility is assumed for inaccuracies. furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of elmos semiconductor ag or others. contact information headquarters elmos semiconductor ag heinrich-hertz-str. 1 ? d-44227 dortmund (germany) ? : +492317549100 ? : sales@elmos.com ? : www.elmos.com regional sales and application support offce munich elmos semiconductor ag am gefgelhof 12 ? d-85716 unterschlei?heim/eching (germany) ? : +49893183700 sales and application support offce north america elmos na. inc. 32255 northwestern highway, suite 45 farmington hills, mi 48334 (usa) ? : +12488653200 sales and application support offce korea and japan elmos korea dongbu root building, 16-2, suite 509 ? sunae-dong, bundang-gu, seongnam-shi, kyonggi-do (korea) ? : +82317141131 sales and application support offce china elmos semiconductor technology (shanghai) co., ltd. unit london, 1bf gc tower ? no. 1088 yuan shen road, pudong new district ? shanghai, pr china, 200122 ? : +862151785178 ? : sales_china@elmos.com sales and application support offce singapore elmos semiconductor singapore pte ltd. 60 alexandra terrace ? #09-31 the comtech ? singapore 118502 ? : +6566351141 ? elmos semiconductor ag, 2012. reproduction, in part or whole, without the prior written consent of elmos semiconductor ag, is prohibited. this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. preliminary information - may 29, 2012 low quiescent current step down converter family

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