Part Number Hot Search : 
RGF15G T1010DH TPS20 00901 FQA55N10 FR304 URF1640 LA7655N
Product Description
Full Text Search
 

To Download IC41SV44054-100T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ic41sv44052 ic41sv44054 integrated circuit solution inc. 1 dr035-0b 7/31/2002 document title 4mx4 bit dynamic ram with fast page mode revision history revision no history draft date remark 0a initial draft june 14,2002 preliminary 0b chang working range from v cc =1.9v~2.4v july 31,2002 to v cc =1.9v~2.7v, v ih =1.4v to v ih =1.6v the attached datasheets are provided by icsi. integrated circuit solution inc reserve the right to change the specifications a nd products. icsi will answer to your questions about device. if you have any questions, please contact the icsi offices.
ic41sv44052 ic41sv44054 2 integrated circuit solution inc. dr035-0b 7/31/2002 features ? fast page mode access cycle ? ttl compatible inputs and outputs ? refresh interval: -- 2,048 cycles/32 ms -- 4,096 cycles/64 ms ? refresh mode: ras -only, cas -before- ras (cbr), and hidden ? jedec standard pinout ? single power supply: 1.9v ? ? ? ? ? 2.7v description the icsi 44052/44054 series is a 4,194,304 x 4-bit high- performance cmos dynamic random access memory. the fast page mode allows 2,048 or 4,096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. these features make the 44052/44054 series ideally suited for digital signal processing, and low power portable audio applications. the 44052/44054 series is packaged in a 26-pin 300mil soj and a 26 pin tsop-2 4m x 4 (16-mbit) dynamic ram with fast page mode key timing parameters parameter -70 - 100 unit ras access time (t rac ) 70 100 ns cas access time (t cac )2025ns column address access time (t aa )3550ns fast page mode cycle time (t pc )4560ns read/write cycle time (t rc ) 130 180 ns icsi reserves the right to make changes to its products at any time without notice in order to improve design and supply the be st possible product. we assume no responsibility for any errors which may appear in this publication. ? copyright 2000, integrated circuit solution inc. pin descriptions a0-a11 address inputs (4k refresh) a0-a10 address inputs (2k refresh) i/o0-3 data inputs/outputs we write enable oe output enable ras row address strobe cas column address strobe vcc power gnd ground pin configuration 24 (26) pin soj, tsop - 2 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 vcc i/o0 i/o1 we ras *a11(nc) a10 a0 a1 a2 a3 vcc gnd i/o3 i/o2 cas oe a9 a8 a7 a6 a5 a4 gnd preliminary *a11 is nc for 2k refresh devices.
ic41sv44052 ic41sv44054 integrated circuit solution inc. 3 dr035-0b 7/31/2002 functional block diagram truth table function ras ras ras ras ras cas cas cas cas cas we we we we we oe oe oe oe oe address t r /t c i/o standby h h x x x high-z read l l h l row/col d out write: word (early write) l l l x row/col d in read-write l l h ll h row/col d out , d in hidden refresh read l h l l h l row/col d out write (1) l h l l l x row/col d in ras -only refresh l h x x row/na high-z cbr refresh h l l x x x high-z note: 1. early write only. oe we cas cas we oe data i/o bus column decoders sense amplifiers memory array 4,194,304 x 4 row decoder data i/o buffers cas control logic we control logics oe control logic i/o0-i/o3 ras ras a0-a10 ras clock generator refresh counter address buffers
ic41sv44052 ic41sv44054 4 integrated circuit solution inc. dr035-0b 7/31/2002 functional description the ic41sv44052 and ic41lv44054 are cmos drams optimized for high-speed bandwidth, low power applications. during read or write cycles, each bit is uniquely addressed through the 11 or 12 address bits. these are entered 11 bits (a0-a10) at a time for the 2k refresh device or 12 bits (a0-a11) at a time for the 4k refresh device. the row address is latched by the row address strobe ( ras ). the column address is latched by the column address strobe ( cas ). ras is used to latch the first nine bits and cas is used the latter ten bits. memory cycle a memory cycle is initiated by bring ras low and it is terminated by returning both ras and cas high. to ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum t ras time has expired. a new cycle must not be initiated until the minimum precharge time t rp , t cp has elapsed. read cycle a read cycle is initiated by the falling edge of cas or oe , whichever occurs last, while holding we high. the col- umn address must be held for a minimum time specified by t ar . data out becomes valid only when t rac , t aa , t cac and t oea are all satisfied. as a result, the access time is dependent on the timing relationships between these parameters. write cycle a write cycle is initiated by the falling edge of cas and we , whichever occurs last. the input data must be valid at or before the falling edge of cas or we , whichever occurs last. refresh cycle to retain data, 2,048 refresh cycles are required in each 32 ms period, or 4,096 refresh cycles are required in each 64ms period. there are two ways to refresh the memory: 1. by clocking each of the 2,048 row addresses (a0 through a10) or 4096 row addresses (a0 through a11) with ras at least once every 32 ms or 64ms respectively. any read, write, read-modify-write or ras-only cycle refreshes the addressed row. 2. using a cas -before- ras refresh cycle. cas -before- ras refresh is activated by the falling edge of ras , while holding cas low. in cas -before- ras refresh cycle, an internal 11(12)-bit counter provides the row addresses and the external address inputs are ignored. cas -before- ras is a refresh-only mode and no data access or device selection is allowed. thus, the output remains in the high-z state during the cycle. power - on after application of the v cc supply, an initial pause of 200 s is required followed by a minimum of eight initializa- tion cycles (any combination of cycles containing a ras signal). during power-on, it is recommended that ras track with v cc or be held at a valid v ih to avoid current surges.
ic41sv44052 ic41sv44054 integrated circuit solution inc. 5 dr035-0b 7/31/2002 absolute maximum ratings (1) symbol parameters rating unit v t voltage on any pin relative to gnd ? 0.5 to +3.0 v v cc supply voltage ? 0.5 to +3.0 v i out output current 50 ma p d power dissipation 0.2 w t a commercial operation temperature -10 to +70 o c t stg storage temperature ? 55 to +125 o c note: 1. stress greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended operating conditions (voltages are referenced to gnd.) symbol parameter min. max. unit v cc supply voltage 1 . 9 2.7 v v ih input high voltage 1.6 v cc + 0.3 v v il input low voltage ? 0.3 0.6 v t a commercial ambient temperature -10 70 o c capacitance (1,2) symbol parameter max. unit c in 1 input capacitance: a0-a10 5 pf c in 2 input capacitance: ras , cas , we , oe 7pf c io data input/output capacitance: i/o0-i/o3 7 pf notes: 1. tested initially and after any design or process changes that may affect these parameters. 2. test conditions: t a = 25 o c, f = 1 mhz.
ic41sv44052 ic41sv44054 6 integrated circuit solution inc. dr035-0b 7/31/2002 electrical characteristics (1) (recommended operating conditions unless otherwise noted.) symbol parameter test condition speed min. max. unit i il input leakage current any input 0v v in vcc ? 55a other inputs not under test = 0v i io output leakage current output is disabled (hi-z) ? 55a 0v v out vcc v oh output high voltage level i oh = ? 2.0 ma 1.6 ? v v ol output low voltage level i ol = 2 ma ? 0.8 v i cc 1 standby current: ttl ras , cas v ih ? 1ma i cc 2 standby current: cmos ras , cas v cc ? 0.2v 0.5 ma i cc 3 operating current: ras , cas , -70 ? 60 ma random read/write (2,3,4) address cycling, t rc = t rc (min.) -100 ? 50 average power supply current i cc 4 operating current: ras = v il , cas v ih -70 ? 45 ma fast page mode (2,3,4) t rc = t rc (min.) -100 ? 35 average power supply current i cc 5 refresh current: ras cycling, cas v ih -70 ? 60 ma ras -only (2,3) t rc = t rc (min.) -100 ? 50 average power supply current i cc 6 refresh current: ras , cas cycling -70 ? 60 ma cbr (2,3,5) t rc = t rc (min.) -100 ? 50 average power supply current notes: 1. an initial pause of 200 s is required after power-up followed by eight ras refresh cycles ( ras -only or cbr) before proper device operation is assured. the eight ras cycles wake-up should be repeated any time the t ref refresh requirement is exceeded. 2. dependent on cycle rates. 3. specified values are obtained with minimum cycle time and the output open. 4. column-address is changed once each fast page cycle. 5. enables on-chip refresh and address counters.
ic41sv44052 ic41sv44054 integrated circuit solution inc. 7 dr035-0b 7/31/2002 ac characteristics (1,2,3,4,5,6) (recommended operating conditions unless otherwise noted.) - 70 - 100 symbol parameter min. max. min. max. units t rc random read or write cycle time 130 ? 180 ? ns t rac access time from ras (6, 7) ? 70 ? 100 ns t cac access time from cas (6, 8, 15) ? 20 ? 25 ns t aa access time from column-address (6) ? 35 ? 50 ns t ras ras pulse width 70 10k 100 10k ns t rp ras precharge time 50 ? 70 ? ns t cas cas pulse width (23) 20 10k 25 10k ns t cp cas precharge time (9) 10 ? 10 ? ns t csh cas hold time (21) 70 ? 100 ? ns t rcd ras to cas delay time (10, 20) 20 50 25 75 ns t asr row-address setup time 0 ? 0 ? ns t rah row-address hold time 10 ? 15 ? ns t asc column-address setup time (20) 0 ? 0 ? ns t cah column-address hold time (20) 15 ? 20 ? ns t ar column-address hold time 70 ? 100 ? ns (referenced to ras ) t rad ras to column-address delay time (11) 15 35 20 50 ns t ral column-address to ras lead time 35 ? 50 ? ns t rpc ras to cas precharge time 5 ? 5 ? ns t rsh ras hold time 20 ? 25 ? ns t clz cas to output in low-z (15, 24) 3 ? 3 ? ns t crp cas to ras precharge time (21) 5 ? 5 ? ns t od output disable time (19, 24) 320 3 25ns t oe output enable time (15, 16) -20 - 25ns t oes oe low to cas high setup time 5 ? 5 ? ns t rcs read command setup time (17, 20) 0 ? 0 ? ns t rrh read command hold time 0 ? 0 ? ns (referenced to ras ) (12) t rch read command hold time 0 ? 0 ? ns (referenced to cas ) (12, 17, 21) t wch write command hold time (17) 10 ? 15 ? ns t wcr write command hold time 70 ? 100 ? ns (referenced to ras ) (17) t wp write command pulse width (17) 10 ? 15 ? ns t rwl write command to ras lead time (17) 20 ? 25 ? ns t cwl write command to cas lead time (17, 21) 20 ? 25 ? ns t wcs write command setup time (14, 17, 20) 0 ? 0 ? ns t dhr data-in hold time (referenced to ras )50 ? 60 ? ns
ic41sv44052 ic41sv44054 8 integrated circuit solution inc. dr035-0b 7/31/2002 ac characteristics (continued) (1,2,3,4,5,6) (recommended operating conditions unless otherwise noted.) - 70 - 100 symbol parameter min. max. min. max. units t ach column-address setup time to cas 15 ? 15 ? ns precharge during write cycle t oeh oe hold time from we during 20 ? 25 ? ns read-modify-write cycle (18) t ds data-in setup time (15, 22) 0 ? 0 ? ns t dh data-in hold time (15, 22) 15 ? 20 ? ns t rwc read-modify-write cycle time 185 ? 240 ? ns t rwd ras to we delay time during 100 ? 130 ? ns read-modify-write cycle (14) t cwd cas to we delay time (14, 20) 45 ? 55 ? ns t awd column-address to we delay time (14) 60 ? 85 ? ns t pc fast page mode read or write 45 ? 60 ? ns cycle time t rasp fast page mode ras pulse width 70 100k 100 100k ns t cpa access time from cas precharge (15) ? 40 ? 55 ns t prwc fast page mode read write 100 ? 120 ? ns cycle time t off output buffer turn-off delay from 3 15 3 15 ns cas or ras (13,15,19, 24) t csr cas setup time (cbr refresh) (20, 25) 5 ? 5 ? ns t chr cas hold time (cbr refresh) ( 21, 25) 10 ? 10 ? ns t ord oe setup time prior to ras during 0 ? 0 ? ns hidden refresh cycle t ref auto refresh period 2 ,0 48 cycles ? 32 ? 32 m s auto refresh period 4,096 cycles ? 64 ? 64 ms t t transition time (rise or fall) (2, 3) 3503 50 ns ac test conditions output load: one ttl load and 100 pf input timing reference levels: v ih = 1.6v, v il = 0.6v output timing reference levels: v oh = 1.6v, v ol = 0.8v
ic41sv44052 ic41sv44054 integrated circuit solution inc. 9 dr035-0b 7/31/2002 notes: 1. an initial pause of 200 s is required after power-up followed by eight ras refresh cycle ( ras -only or cbr) before proper device operation is assured. the eight ras cycles wake-up should be repeated any time the t ref refresh requirement is exceeded. 2. v ih (min) and v il (max) are reference levels for measuring timing of input signals. transition times, are measured between v ih and v il (or between v il and v ih ) and assume to be 1 ns for all inputs. 3. in addition to meeting the transition rate specification, all input signals must transit between v ih and v il (or between v il and v ih ) in a monotonic manner. 4. if cas and ras = v ih , data output is high-z. 5. if cas = v il , data output may contain data from the last valid read cycle. 6. measured with a load equivalent to one ttl gate and 50 pf. 7. assumes that t rcd t rcd (max). if t rcd is greater than the maximum recommended value shown in this table, t rac will increase by the amount that t rcd exceeds the value shown. 8. assumes that t rcd t rcd (max). 9. if cas is low at the falling edge of ras , data out will be maintained from the previous cycle. to initiate a new cycle and clear the data output buffer, cas and ras must be pulsed for t cp . 10. operation with the t rcd (max) limit ensures that t rac (max) can be met. t rcd (max) is specified as a reference point only; if t rcd is greater than the specified t rcd (max) limit, access time is controlled exclusively by t cac . 11. operation within the t rad (max) limit ensures that t rcd (max) can be met. t rad (max) is specified as a reference point only; if t rad is greater than the specified t rad (max) limit, access time is controlled exclusively by t aa . 12. either t rch or t rrh must be satisfied for a read cycle. 13. t off (max) defines the time at which the output achieves the open circuit condition; it is not a reference to v oh or v ol . 14. t wcs , t rwd , t awd and t cwd are restrictive operating parameters in late write and read-modify-write cycle only. if t wcs t wcs (min), the cycle is an early write cycle and the data output will remain open circuit throughout the entire cycle. if t rwd t rwd (min), t awd t awd (min) and t cwd t cwd (min), the cycle is a read-write cycle and the data output will contain data read from the selected cell. if neither of the above conditions is met, the state of i/o (at access time and until cas and ras or oe go back to v ih ) is indeterminate. oe held high and we taken low after cas goes low result in a late write ( oe -controlled) cycle. 15. output parameter (i/o) is referenced to corresponding cas input. 16. during a read cycle, if oe is low then taken high before cas goes high, i/o goes open. if oe is tied permanently low, a late write or read-modify-write is not possible. 17. write command is defined as we going low. 18. late write and read-modify-write cycles must have both t od and t oeh met ( oe high during write cycle) in order to ensure that the output buffers will be open during the write cycle. the i/os will provide the previously written data if cas remains low and oe is taken back to low after t oeh is met. 19. the i/os are in open during read cycles once t od or t off occur. 20. determined by falling edge of cas . 21. determined by rising edge of cas . 22. these parameters are referenced to cas leading edge in early write cycles and we leading edge in late write or read- modify-write cycles. 23. cas must meet minimum pulse width. 24. the 3 ns minimum is a parameter guaranteed by design. 25. enables on-chip refresh and address counters.
ic41sv44052 ic41sv44054 10 integrated circuit solution inc. dr035-0b 7/31/2002 don?t care read cycle note: 1. t off is referenced from rising edge of ras or cas , whichever occurs last. t ras t rc t rp t ar t cah t asc t rad t ral oe i/o we address cas ras row column row open open valid data t csh t cas t rsh t crp t rcd t rah t asr t rrh t rch t rcs t aa t cac t off (1) t rac t clz t oes t oe t od
ic41sv44052 ic41sv44054 integrated circuit solution inc. 11 dr035-0b 7/31/2002 read write cycle (late write and read-modify-write cycles) don?t care t ras t rwc t rp t ar t cah t asc t rad t ral t ach we oe address cas ras row column row t csh t cas t rsh t crp t rcd t rah t asr t rwd t cwl t cwd t rwl t awd t wp t rcs t cac t clz t ds t dh t oeh t od t oe t rac t aa i/o open open valid d out valid d in
ic41sv44052 ic41sv44054 12 integrated circuit solution inc. dr035-0b 7/31/2002 early write cycle ( oe = don't care) don ? t care t ras t rc t rp t ar t cah t asc t rad t ral t ach i/o we address cas ras row column row t csh t cas t rsh t crp t rcd t rah t asr t cwl t wcr t wch t rwl t wp t wcs t dh t ds t dhr valid data
ic41sv44052 ic41sv44054 integrated circuit solution inc. 13 dr035-0b 7/31/2002 fast page mode read cycle don ? t care out t ar i/o we oe address cas ras row column column column t ar t csh t cas t cas t cas t rasp t rsh t pc t rcd t crp t asr t rad t rcs t asc t asc t asc t ral t cah t cp t cp t rp t cah t cac t aa t clz t rac t oe t clz t cac t oe t cac t oe out out t od t od t od t clz t aa t aa t rah t cah t crp t cpa t cpa
ic41sv44052 ic41sv44054 14 integrated circuit solution inc. dr035-0b 7/31/2002 fast page mode early write cycle don ? t care t ar i/o we oe address cas ras row column column column t ar t cwl t wcr t dhr t csh t cas t cas t cas t rasp t rsh t pc t rcd t crp t asr t wcs t ds t rad t asc t asc t asc t ral t cah t wch t dh t ds t ds t dh t dh t cp t cp t rp t cah t rah t cah t crp t cwl t wcs t wcs t wch t wp t wp t rwl t wch t wp valid d in valid d in valid d in
ic41sv44052 ic41sv44054 integrated circuit solution inc. 15 dr035-0b 7/31/2002 ras ras ras ras ras - only refresh cycle ( oe , we = don't care) t ras t rc t rp i/o address cas ras row row open t crp t rah t asr t rpc don ? t care fast page mode read write cycle ( late write and read-modify-write cycle ) don ? t care out t ar t rwd t awd i/o we oe address cas ras row column column column t ar t csh t cas t cas t cas t rasp t rsh t prwc t rcd t cwd t cwd t cwd t crp t asr t rad t rcs t asc t asc t asc t ral t cah t cp t cp t rp t cah t awd t awd t cac t aa t dh t clz t rac t dh t dh t oe t clz t cac t oe t cac t oe out out in in in t od t od t ds t od t ds t clz t aa t aa t wp t rah t wp t wp t cwl t cwl t cwl t rwl t cah t crp t ds
ic41sv44052 ic41sv44054 16 integrated circuit solution inc. dr035-0b 7/31/2002 hidden refresh cycle (1) ( we = high; oe = low) cbr refresh cycle (addresses; we , oe = don't care) t ras t ras t rp t rp i/o cas ras open t cp t rpc t csr t chr t rpc t csr t chr t ras t ras t rp cas ras t crp t rcd t rsh t chr t ar t asc t rad address row column t rah t asr t ral t cah i/o open open valid data t aa t cac t rac t clz t off (2) oe t oe t ord t od don ? t care don ? t care notes: 1. a hidden refresh may also be performed after a write cycle. in this case, we = low and oe = high. 2. t off is referenced from rising edge of ras or cas , whichever occurs last.
ic41sv44052 ic41sv44054 integrated circuit solution inc. 17 dr035-0b 7/31/2002 ordering information commercial range: -10 c to 70 c voltage: 2.2v speed (ns) order part no. package 70 ic41sv44052-70j 300mil soj 70 ic41sv44052-70t 300mil tsop-2 70 ic41sv44052-70jg 300mil soj pb-free 70 ic41sv44052-70tg 300mil tsop-2 pb-free 100 ic41sv44052-100j 300mil soj 100 ic41sv44052-100t 300mil tsop-2 100 ic41sv44052-100jg 300mil soj pb-free 100 ic41sv44052-100tg 300mil tsop-2 pb-free speed (ns) order part no. package 70 ic41sv44054-70j 300mil soj 70 ic41sv44054-70t 300mil tsop-2 70 ic41sv44054-70jg 300mil soj pb-free 70 ic41sv44054-70tg 300mil tsop-2 pb-free 100 ic41sv44054-100j 300mil soj 100 IC41SV44054-100T 300mil tsop-2 100 ic41sv44054-100jg 300mil soj pb-free 100 IC41SV44054-100Tg 300mil tsop-2 pb-free integrated circuit solution inc. headquarter: no.2, technology rd. v, science-based industrial park, hsin-chu, taiwan, r.o.c. tel: 886-3-5780333 fax: 886-3-5783000 branch office: 7f, no. 106, sec. 1, hsin-tai 5 th road, hsichih taipei county, taiwan, r.o.c. tel: 886-2-26962140 fax: 886-2-26962252 http://www.icsi.com.tw


▲Up To Search▲   

 
Price & Availability of IC41SV44054-100T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X