EMF23 power management (dual transistors) features z 2sa1774 and dtc114e are housed independently in a package z power management circuit z power switching circuit in a single package z mounting cost and area can be cut in half marking: f23 tr1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -continuous -150 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 tr1 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -6 v collector cut-off current i cbo v cb =-60v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-6v,i c =0 -0.1 a dc current gain h fe v ce =-6v,i c =-1ma 180 390 collector-emitter saturation voltage v ce(sat) i c =-50ma,i b =-5ma -0.5 v transition frequency f t v ce =-12v,i c =-2ma,f=100mhz 140 mhz collector output capacitance c ob v cb =-12v,i e =0,f=1mhz 5 pf 1 sot-563 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
dtr2 maximum ratings (ta=25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -10~40 v i o 50 output current i c(max) 100 ma power dissipation p c 150 mw junction temperature tj 150 storage temperature tstg -55~150 dtr2 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v ,i o =100 a input voltage v i(on) 3 v v o =0.3v ,i o =10 ma output voltage v o(on) 0.3 v i o /i i =10ma/0.5ma input current i i 0.88 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 30 v o =5v ,i o =5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t 250 mhz v o =10v ,i o =-5ma,f=100mhz EMF23 www.htsemi.com semiconductor jinyu 2 date:2011/ 05
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