parameter symbol typ unit repetitive peak off-state voltages v drm v rrm 400 v rms on-state current i t(av) 5.0 a non-repetitive peak on-state current i tsm 65 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c 5P4J general description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v drm v rrm 400 v rms on-state current i t(av) full sine wave; t mb 103 o c 5.0 a on-state voltage v t i t =10a 1.6 v holding current i h i t =0.5a; i gt = 0.2ma 1.0 ma gate trigger current i gt v d = 6.0 v; r l = 100 10 200 a gate trigger voltage v gt v d = 6.0 v; r l = 100 0.8 v 5a small mold thyristor passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial domestic lighting, heating and staticand switching. product specification absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o to-251 tiger electronic co.,ltd
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