advanced power n-channel enhancement mode electronics corp. power mosfet dynamic dv/dt rating bv dss 650v repetitive avalanche rated r ds(on) 1.2 fast switching i d 7a simple drive requirement rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value units rthj-c thermal resistance junction-case max. 1.4 /w rthj-a thermal resistance junction-ambient max. 62 /w data & specifications subject to change without notice 7 parameter 200705051-1/4 -55 to 150 parameter ap07n70cp-a 140 rating 650 30 pb free plating product 7 7 4.4 storage temperature range -55 to 150 18 89 linear derating factor 0.7 ap07n70 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications.both to-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. the to-220 package is universally preferred for all commercial-industrial applications. the device is suited for switch mode power supplies ,dc- ac converters and high current high speed switching circuits. g d s to-220(p) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =3.5a - - 1.2 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =3.5a - 4.5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =7a - 32 - nc q gs gate-source charge v ds =480v - 8.6 - nc q gd gate-drain ("miller") charge v gs =10v - 9 - nc t d(on) turn-on delay time 3 v dd =300v - 17 - ns t r rise time i d =7a - 15 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 35 - ns t f fall time r d =43 -18- ns c iss input capacitance v gs =0v - 2075 - pf c oss output capacitance v ds =25v - 120 - pf c rss reverse transfer capacitance f=1.0mhz - 8 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 7 a i sm pulsed source current ( body diode ) 1 --18 a v sd forward on voltage 3 t j =25 , i s =7a, v gs =0v - - 1.5 v notes: 1.pulse width limited by safe operating area. 2.starting t j =25 o c , v dd =50v , l=5mh , r g =25 , i as =7a. 3.pulse width < 300us , duty cycle < 2%. 2/4 ap07n70cp-a
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 ap07n70cp-a 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3.5a v g =10v 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 4 8 12 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.5v 5.0v v g =4.0v 0 3 6 9 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 6.0v 5.5v 5.0v 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap07n70cp-a 0 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pluse 10us 100us 1ms 10ms 100ms 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse q v g 10v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% 0 4 8 12 16 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =320v v ds =400v v ds =480v 1 100 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss
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