www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septemb er 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 bcp24 0t high efficiency heterojunction power fet chip (.25 m x 2400 m ) the berex bcp 24 0 t is a gaas power phemt w ith a nominal 0. 2 5 micron gate length and 24 00 micron gate width mak ing the product ideally suited for applications where high - gain and medium power in the 1000 mhz to 26.5 ghz frequency range are required . the product may be used in either wideband (6 - 18 ghz) or narrow - band applications. the bcp240 t is produced using state of the art metallization with si 3 n 4 passivation and is screened to assure reliability. product features ? 34 dbm typical output power ? 1 0 db typical gain @ 12 ghz ? 0. 2 5 x 24 00 micron recessed gate applications ? commercial ? military / hi - rel . ? test & measurement electrical characteristic ( tuned for power ) t a = 25 c symbol parameter/test conditions test freq . min. typical max . unit p 1db output power @ p 1db (v ds = 8v, i ds = 50% i dss ) 12 ghz 33.5 34.5 dbm g 1db gain @ p 1db (v ds = 8v, i ds = 50% i dss ) 12 ghz 9.0 10.0 db pae pae @ p 1db (v ds = 8v, i ds = 50% i dss ) 12 ghz 5 5 % i dss saturated drain current (v gs = 0v, v ds = 1.2v) 48 0 7 2 0 96 0 ma g m transconductance (v ds = 2v, v gs = 50% i dss ) 960 ms v p pinch - off voltage (i ds = 2.4 ma, v ds = 2v) - 2.5 - 1.1 - 0.5 v bv gd drain breakdown voltage (i g = 2.4 ma, source open) - 15 - 1 2 v bv gs source breakdown voltage (i g = 2 . 4 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 23 c/w
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septemb er 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 bcp 24 0t e lectrical characteristic ( tuned for gain ) t a = 25 c symbol parameter/test conditions test freq . min . typical max . unit p 1db output power @ p 1db (v ds = 8v, i ds = 50% i dss ) 12 ghz 31.0 32.5 dbm g 1db gain @ p 1db (v ds = 8v, i ds = 50% i dss ) 12 ghz 9.5 11 .0 db pae pae @ p 1db (v ds = 8v, i ds = 50% i dss ) 12 ghz 36 % i dss saturated drain current (v gs = 0v, v ds = 1.2v) 48 0 7 2 0 96 0 ma g m transconductance (v ds = 2v, v gs = 50% i dss ) 960 ms v p pinch - off voltage (i ds = 2.4 ma, v ds = 2v) - 2.5 - 1.1 - 0.5 v bv gd drain breakdown voltage (i g = 2.4 ma, source open) - 15 - 12 v bv gs source breakdown voltage (i g = 2.4 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 23 c/w maximum rating (t a = 25 c) symbols parameters absolute continuous v ds v gs i ds i gsf p in t ch t stg p t drain - source voltage gate - source voltage drain current forward gate current input power channel temperature storage temperature total power dissipation 12 v - 6 v i dss 12 0 ma 3 1 dbm 175 c - 60 c - 150 c 8.4 w 8 v - 3 v 690 m a 2 0 ma @ 3db c ompression 150 c - 60 c - 150 c 6.9 w exceeding any of the above maximum ratings will result in reduced mttf and may cause permanent damage to the device. p in _p out /gain, pae (12 ghz) frequency = 12ghz v ds = 8 v, i ds = 50% i dss ( tune d for power) frequency = 12ghz v ds = 8 v, i ds = 50% i dss ( tune d for gain)
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septemb er 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 bcp24 0t s - p arameter ( v ds = 8v, i ds = 50% i dss ) freq . [gh z ] s11 [mag] s11 [ang . ] s21 [mag] s21 [ang . ] s12 [mag] s12 [ang . ] s22 [mag] s22 [ang . ] 1 0.90 - 147.20 10.68 101.84 0.024 26.83 0.54 - 166.95 2 0.90 - 166.80 5.52 87.86 0.026 31.25 0.56 - 173.49 3 0.91 - 175.23 3.72 79.48 0.028 32.71 0.57 - 175.76 4 0.92 179.32 2.80 72.74 0.032 38.68 0.58 - 176.62 5 0.92 175.65 2.22 66.25 0.033 42.56 0.59 - 177.49 6 0.92 172.96 1.84 60.88 0.037 47.19 0.60 - 178.08 7 0.92 170.17 1.54 55.39 0.039 49.21 0.61 - 178.49 8 0.93 167.87 1.35 50.23 0.040 52.94 0.62 - 178.60 9 0.93 165.98 1.21 46.31 0.045 50.65 0.63 - 179.68 10 0.92 163.50 1.09 41.28 0.048 53.68 0.64 179.89 11 0.93 161.40 0.99 36.84 0.052 54.32 0.65 179.02 12 0.93 158.76 0.91 32.10 0.054 53.07 0.66 178.15 13 0.93 154.63 0.85 27.43 0.056 53.42 0.67 177.02 14 0.94 151.80 0.78 22.74 0.058 51.40 0.68 175.57 15 0.93 148.54 0.72 17.87 0.061 50.66 0.69 173.37 16 0.94 143.75 0.67 12.61 0.062 47.94 0.71 171.14 17 0.94 140.71 0.62 7.15 0.063 44.66 0.72 168.48 18 0.94 136.72 0.56 2.33 0.065 40.30 0.74 166.01 19 0.95 132.10 0.51 - 3.25 0.064 41.04 0.76 163.20 20 0.96 131.00 0.46 - 7.07 0.063 37.85 0.77 161.05 21 0.96 128.78 0.41 - 10.67 0.064 35.99 0.78 158.85 22 0.96 126.73 0.37 - 13.78 0.063 35.56 0.79 157.27 23 0.95 127.90 0.33 - 15.97 0.064 32.67 0.80 154.94 24 0.95 126.96 0.30 - 17.87 0.064 27.92 0.82 154.34 25 0.96 127.60 0.27 - 19.52 0.061 28.05 0.82 153.29 26 0.95 130.57 0.25 - 18.60 0.058 37.30 0.83 153.31 note: s - parameters include bond wires. reference planes are at edge of substrates shown on wire bonding information figure below.
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septemb er 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 bcp24 0t wire bonding information using 1 mil . diameter, au bonding wires. 1. gate to input transmission line - length and height : 600 m x 250 m - number of wire(s) : 4 2. drain to output transmission line - length and height : 400 m x 250 m - number of wire(s) : 4 3. source to ground plate - length and height : 250 m x 300 m - number of wire(s) : 10 disclaimer berex reserves the right to make changes without further notice to any products herein to improve reliability, function or design. berex does not assume any liability arising out of the application or use of any product or circuit described herein. life support policy berex products are not authorized for use as critical components in life support devices without the express written approval of berex. 1. life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected t o result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or e ffectiveness.
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