1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c90a i dm t c = 25 c, pulse width limited by t jm 360 a i ar t c = 25 c90a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.4/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250ua 200 v v gs(th) v ds = v gs , i d = 4ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 22 m note 1 98676b (7/00) plus 247 tm (ixfx) g d (tab) g = gate d = drain s = source tab = drain ixfx 90n20q v dss = 200 v ixfk 90n20q i d25 = 90 a r ds(on) = 22m t rr 200 s s g d (tab) to-264 aa (ixfk) hiperfet tm power mosfets q-class single mosfet die n-channel enhancement mode avalanche rated, low qg, high dv/dt, low t rr features ixys advanced low q g process low gate charge and capacitances - easier to drive - faster switching international standard packages low r ds (on) rated for unclamped inductive load switching (uis) rated molding epoxies meet ul 94 v-0 flammability classification applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls advantages plus 247 tm package for clip or spring mounting space savings high power density ixys reserves the right to change limits, test conditions, and dimensions. preliminary data
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 note 1 40 50 s c iss 6800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1620 pf c rss 480 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 31 ns t d(off) r g = 1 (external), 82 ns t f 12 ns q g(on) 190 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 nc q gd 90 nc r thjc 0.26 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 90 a i sm repetitive; 360 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.3 v t rr 200 ns q rm 1.4 c i rm 10 a i f = 45a,-di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % ixfk 90n20q ixfx 90n20q plus247 tm (ixfx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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