bfr 183w oct-25-1999 1 npn silicon rf transistor for low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma f t = 8 ghz f = 1.2 db at 900 mhz 1 3 vso05561 2 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfr 183w rhs 1 = b 2 = e 3 = c sot-323 maximum ratings parameter symbol unit value collector-emitter voltage 12 v ceo v collector-emitter voltage v ces 20 collector-base voltage 20 v cbo 2 v ebo emitter-base voltage collector current i c 65 ma base current i b 5 total power dissipation , t s 56 c f) p tot 450 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance junction - soldering point r thjs 210 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bfr 183w oct-25-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 1 a dc current gain i c = 15 ma, v ce = 8 v h fe 50 100 200 -
bfr 183w oct-25-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 25 ma, v ce = 8 v, f = 500 mhz f t 6 8 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.46 0.7 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce - 0.24 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 1 - noise figure i c = 5 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f - - 1.2 2 - - db power gain, maximum available f) i c = 15 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz g ma - - 18 11.5 - - transducer gain i c = 15 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz f = 1.8 ghz | s 21e | 2 - - 15 9 - - 1 g ma = | s 21 / s 12 | (k-(k 2 -1) 1/2 )
bfr 183w oct-25-1999 4 spice parameters (gummel-poon model, berkley-spice 2g.6 syntax) : transistor chip data is = 1.0345 fa vaf = 14.772 v ne = 1.2149 - var = 3.4276 v nc = 0.85331 - rbm = 2.5426 cje = 23.077 ff tf = 22.746 ps itf = 1.8773 ma vjc = 1.1967 v tr = 1.0553 ns mjs = 0- xti = 3 - bf = 115.98 - ikf = 0.14562 a br = 10.016 - ikr = 0.013483 a rb = 1.0112 re = 1.3435 vje = 1.0792 v xtf = 0.36823 - ptf = 0 deg mjc = 0.3 - cjs = 0ff xtb = 0- fc = 0.54852 - nf = 0.80799 - ise = 16.818 fa nr = 0.99543 - isc = 1.3559 fa irb = 0.43801 ma rc = 0.20486 mje = 0.45354 - vtf = 0.50905 v cjc = 460.11 ff xcjc = 0.053823 - vjs = 0.75 v eg = 1.11 ev tnom 300 k all parameters are ready to use, no scalling is necessary. extracted on behalf of siemens small signal semiconductors by: institut fr mobil-und satellitentechnik (imst) 1996 siemens ag package equivalent circuit: l bi = 0.57 nh l bo = 0.4 nh l ei = 0.43 nh l eo = 0.5 nh l ci = 0nh l co = 0.41 nh c be = 61 ff c cb = 101 ff c ce = 175 ff valid up to 6ghz for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com/products/discrete/index.htm
bfr 183w oct-25-1999 5 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 250 300 350 400 mw 500 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bfr 183w oct-25-1999 6 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 4 8 12 16 v 22 v cb 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pf 1.3 c cb 0 4 8 12 16 v 22 v cb 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pf 1.3 c cb transition frequency f t = f ( i c ) v ce = parameter 0 5 10 15 20 25 30 35 ma 45 i c 0 1 2 3 4 5 6 7 8 ghz 10 f t 10v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 0.9ghz v ce = parameter 0 5 10 15 20 25 30 35 ma 45 i c 5 6 7 8 9 10 11 12 13 14 15 16 17 db 20 g 10v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 1.8ghz v ce = parameter 0 5 10 15 20 25 30 35 ma 45 i c -1 0 1 2 3 4 5 6 7 8 9 10 11 db 13 g 10v 3v 2v 1v 0.7v
bfr 183w oct-25-1999 7 intermodulation intercept point ip 3 = f ( i c ) (3rd order, output, z s = z l =50 ) v ce = parameter, f = 900mhz 0 5 10 15 20 25 30 ma 40 i c 5 10 15 20 dbm 30 ip 3 8v 5v 3v 2v 1v power gain g ma , g ms = f ( v ce ):_____ | s 21 | 2 = f ( v ce ):--------- f = parameter 0 2 4 6 8 10 v 13 v ce 4 5 6 7 8 9 10 11 12 13 14 15 16 db 19 g 0.9ghz 1.8ghz 0.9ghz 1.8ghz i c =15ma power gain | s 21 | 2 = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f 0 5 10 15 20 db 30 s 21 10v 1v 0.7v i c =15ma power gain g ma , g ms = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f 0 5 10 15 20 25 db 35 g 10v 1v 0.7v i c =15ma
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