symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 19.6 25 50 60 r jc 0.9 1.5 19 t a =70c 15 a repetitive avalanche energy l=0.1mh c 112 mj c/w thermal characteristicsparameter units maximum junction-to-ambient a t 10s r ja c/w gate-source voltage drain-source voltagemaximum junction-to-case c steady-state continuous draincurrent g t a =25c i dsm t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current power dissipation b t c =25c a i d maximum junction-to-ambient a steady-state 8563 150 avalanche current c 30 power dissipation a 2.08 1.3 continuous draincurrent b,g maximum units parameter t c =25c g t c =100c b 30 w junction and storage temperature range p d c 100 50 -55 to 175 t c =100c w t a =70c aol1420n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 3.7m (v gs = 10v) r ds(on) < 5.5m (v gs = 4.5v) uis tested rg,ciss,coss,crss tested general description the aol1420 uses advanced trench technology toprovide excellent r ds(on) , low gate charge and low gate resistance. this device is ideally suited for use as a low side switch in cpu core power conversion. -rohs compliant -halogen and antimony free green device* g ds ultra so-8 tm top view bottom tabconnected to drain s g d alpha & omega semiconductor, ltd. www.aosmd.com
aol1420 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 85 a 2.9 3.7 t j =125c 4.4 5.5 4.4 5.5 m g fs 106 s v sd 0.72 1 v i s 85 a c iss 3700 4400 pf c oss 700 pf c rss 390 pf r g 0.54 0.7 q g (10v) 63 76 nc q g (4.5v) 33 40 nc q gs 8.6 nc q gd 17.6 nc t d(on) 12 ns t r 15.5 ns t d(off) 40 ns t f 14 ns t rr 34 41 ns q rr 30 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery timebody diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain currentgate-body leakage current r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise timeturn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate chargegate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a total gate charge a: the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuminga maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires.* this device is guaranteed green after date code 8p11 (june 1 st 2008) rev3: jun 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aol1420 typical electrical and thermal characteristics 0 25 50 75 100 125 150 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 10v 4.0v 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 6 7 8 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 0 2 4 6 8 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd. www.aosmd.com
aol1420 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 70 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? jc normalized transient thermal resistance c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r ja =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
aol1420 typical electrical and thermal characteristics 0 20 40 60 80 100 120 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c dd d a v bv i l t ? ? = 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ? ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w single pulse in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60 c/w alpha & omega semiconductor, ltd. www.aosmd.com
aol1420 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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