 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry principal device types cmlt7820g cmpt7820 cxt7820 gross die per 5 inch wafer 25,536 process CP782X small signal transistor pnp - low v ce(sat) transistor chip process details die size 26 x 26 mils die thickness 5.9 mils base bonding pad area 5.5 x 5.5 mils emitter bonding pad area 5.5 x 5.5 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (9-september 2010)
process CP782X typical electrical characteristics www.centralsemi.com r0 (9-september 2010) |
Price & Availability of CP782X
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |