c-285 IRGPH40FD2 insulated gate bipolar transistor with ultrafast soft recovery diode
c-286 parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 45 67 i c = 17a q ge gate - emitter charge (turn-on) ? 11 16 nc v cc = 400v q gc gate - collector charge (turn-on) ? 17 26 see fig. 8 t d(on) turn-on delay time ? 70 ? t j = 25c t r rise time ? 58 ? ns i c = 17a, v cc = 800v t d(off) turn-off delay time ? 320 550 v ge = 15v, r g = 10 w t f fall time ? 370 630 energy losses include "tail" and e on turn-on switching loss ? 2.6 ? diode reverse recovery. e off turn-off switching loss ? 5.4 ? mj see fig. 9, 10, 11, 18 e ts total switching loss ? 8.0 15 t d(on) turn-on delay time ? 70 ? t j = 150c, see fig. 9, 10, 11, 18 t r rise time ? 54 ? ns i c = 17a, v cc = 800v t d(off) turn-off delay time ? 670 ? v ge = 15v, r g = 10 w t f fall time ? 930 ? energy losses include "tail" and e ts total switching loss ? 15 ? mj diode reverse recovery. l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 1200 ? v ge = 0v c oes output capacitance ? 75 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 15 ? ? = 1.0mhz t rr diode reverse recovery time ? 63 95 ns t j = 25c see fig. ? 106 160 t j = 125c 14 i f = 8.0a i rr diode peak reverse recovery current ? 4.5 8.0 a t j = 25c see fig. ? 6.2 11 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ? 140 380 nc t j = 25c see fig. ? 335 880 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 133 ? a/s t j = 25c see fig. during t b ? 85 ? t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage ? 1.3 ? v/c v ge = 0v , i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.5 3.3 i c = 17a v ge = 15v ? 3.2 ? v i c = 29a see fig. 2, 5 ? 3.0 ? i c = 17a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ? -13 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 5.0 11 ? s v ce = 100v, i c = 17a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 1200v ? ? 1000 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 2.6 3.3 v i c = 8.0a see fig. 13 ? 2.3 3.0 i c = 8.0a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v IRGPH40FD2
c-287 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics
c-288 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGPH40FD2
c-289 IRGPH40FD2
c-290 fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current
c-291
c-292
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