pin out pin 1 ? collector 1 pin 4 ? collector 2 pin 2 ? base 1 pin 5 ? emitter 2 pin 3 ? base 2 pin 6 ? emitter 1 dual bipolar npn devices in a hermetically sealed lcc2 ceramic surface mount package for high reliability applications features silicon planar epitaxial npn transistor hermetic ceramic surface mount package cecc screening options space quality levels options jan level screening options high voltage all semelab hermetically sealed products can be processed in accordance with the requirements of bs, cecc and jan, jantx, jantxv and jans specifications. lcc2 (mo-041bb) mechanical data dimensions in mm (inches) 2N3501DCSM semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 4059 issue 1 absolute maximum ratings (t case = 25c unless otherwise stated) single side total device v cbo collector-base voltage 150v v ceo collector-emitter voltage(i b =0) 150v v ebo emitter-base voltage(i b =0) 6v i c continuous collector current 300ma p d power dissipation tamb = 25c 300mw 500mw derate above 25c 1.72mw/c 2.86mw/c t j operating temperature range -65 to 200c t stg storage temperature range -65 to 200c r thja thermal resistance junction to ambient 350c 1 2 6 3 4 5 2.54 0.13 (0.10 0.005) 0.64 0.06 (0.025 0.003) 0.23 (0.009) 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 2.29 0.20 (0.09 0.008) rad. a 1.27 0.13 (0.05 0.005) a = 6.22 0.13 (0.245 0.005) 4.32 0.13 (0.170 0.005) semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
2N3501DCSM semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 4059 issue 1 electrical characteristics (t case = 25 c unless otherwise stated) parameter test conditions min. typ. max. unit off characteristics v (br)ceo collector-emitter breakdown voltage 1 i c =10ma i b =0 150 v v (br)cbo collector-base breakdown voltage i c =10a i e =0 150 v v (br)ebo emitter-base breakdown voltage i e =10a i c =0 6 v i cbo collector cutoff current v cb =75v i e =0 0.05 t amb =150 c 50 a i ebo emitter cutoff current v be(off) =4v v ce =0 25 na on characteristics i c =0.1ma v ce =10v 35 i c =1ma v ce =10v 50 i c =10 ma v ce =10v 75 i c =150 ma v ce =10v 100 300 h fe dc current gain i c =300 ma v ce =10v 20 i c =10ma i b =1ma 0.2 i c =50ma i b =5ma 0.25 v ce(sat) collector-emitter saturation voltage 1 i c =150 ma i b =15ma 0.4 v i c =10ma i b =1ma 0.8 i c =50ma i b =5ma 0.9 v be(sat) base-emitter saturation voltage 1 i c =150 ma i b =15ma 1.2 v small signal characteristics f t current gain-bandwidth product (100mhz) v ce =20v i c =20ma 150 mhz c obo output capacitance (1mhz) v cb =10v i e =0 8 c ibo input capacitance (1mhz) v eb =0.5v i c =0 80 pf h ie input impedance (1khz) v ce =10v i c =10ma 0.25 1.25 ` h fe small-signal current gain (1khz) v ce =10v i c =10ma 375 h oe output admittance (1khz) v ce =10v i c =10ma 200 ` switching characteristics t d delay time i c =150ma i b 1 =15ma 20 t r rise time v cc =100v v eb(off) =-2v 35 t s storage time i c =150ma i b 1 =15ma 800 t f fall time i b1 =i b2 =15ma 80 ns 1) pulse test: pulse width < 300s, duty cycle <2% 2) f t is defined as frequency at which |h fe |.f test semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
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