http://www .weitron.com.tw weitron 1 2 3 KTA2015 pnp general purpose transistors symbol v ceo v cbo v ebo value unit v v v rating -30 -35 -5.0 mw t j 100 t stg -55 to +150 +150 c c -500 i c p d collector current - continuous ma emitter-base voltage collector-emitter voltage collector-base voltage maximum ratings (ta=25c) storage temperature junction temperature total device dissipation t a =25c 1/ 2 07-apr-10 l e a d( p b ) - f r ee p b sot-323 sot-323 outline dimension a b d e g m l h j t op vi e w k c dim a b c d e g h j k l m min 0.30 unit:mm 1.15 2.00 - 0.30 1.20 1.80 0.00 0.80 0.42 0.10 max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 so t -323
200 - - v KTA2015 range zo zy 70-140 120-240 marking -0.25 w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w characteristics symbol min max typ unit v (br)ceo v (br)cbo v (br)ebo i cbo i ebo -5.0 - - - - - -0.1 v v v a a -30 -35 -0.1 - - - - - electrical characteristics o y rank small-signal characteristics transition frequence v ce =-6v, i c = -20ma mhz f t - 13 - collector output capacitane v cb =-6v, i e = 0, f=1mhz pf c ob - collector-emitter saturation voltage i c = -100ma, i b = -10ma v ce(sat) - - 70 240 dc current transfer ration v ce = -1v, i c = -100ma h fe on characteristics v eb = -5v, i c = 0a v cb = -35v, i e = 0a emitter-base breakdown voltage i e = -100a, i c = 0a collector-emitter breakdown voltage i c = -1ma, i b = 0a collector-base breakdown voltage i c = -100a, i e = 0a classification h fe 2/ 2 07-apr-10
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