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  mrf6p23190hr6 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for cdma base station applications with frequencies from 2300 to 2400 mhz. suitable for wimax, wibro and multicarrier amplifier applications. to be used in class ab and class c for wll applications. ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 1900 ma, p out = 40 watts avg., f = 2390 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 14 db drain efficiency ? 23.5% im3 @ 10 mhz offset ? - 37.5 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 41 dbc in 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 2340 mhz, 190 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c cw operation @ t c = 25 c derate above 25 c cw 250 1.3 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 100 c, 160 w cw case temperature 83 c, 40 w cw r jc 0.22 0.24 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6p23190h rev. 3, 12/2008 freescale semiconductor technical data mrf6p23190hr6 2300 - 2400 mhz, 40 w avg., 28 v 2 x w - cdma lateral n - channel rf power mosfet case 375d - 05, style 1 ni - 1230 ? freescale semiconductor, inc., 2005 - 2008. all rights reserved.
2 rf device data freescale semiconductor mrf6p23190hr6 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds = 10 vdc, i d = 200 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (3) (v dd = 28 vdc, i d = 1900 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain - source on - voltage (1) (v gs = 10 vdc, i d = 2.2 adc) v ds(on) 0.1 0.21 0.3 vdc dynamic characteristics (1,2) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1900 ma, p out = 40 w avg., f = 2390 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 13 14 16 db drain efficiency d 22 23.5 ? % intermodulation distortion im3 ? - 37.5 -35 dbc adjacent channel power ratio acpr ? -41 -38 dbc input return loss irl ? -13 ? db 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in push - pull configuration.
mrf6p23190hr6 3 rf device data freescale semiconductor figure 1. mrf6p23190hr6 test circuit schematic z17, z18 0.321 x 0.782 microstrip z19, z20 0.404 x 0.074 microstrip z21, z22 0.918 x 0.081 microstrip z23 0.346 x 0.081 microstrip z24 2.103 x 0.081 microstrip z25 0.037 x 0.135 microstrip z26 0.250 x 0.300 microstrip z27 0.563 x 0.135 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1, z28 0.380 x 0.081 microstrip z2 0.850 x 0.135 microstrip z3 2.244 x 0.081 microstrip z4 0.186 x 0.074 microstrip z5, z6 0.614 x 0.081 microstrip z7, z8 0.570 x 0.282 microstrip z9, z10 0.072 x 0.500 microstrip z11, z12 0.078 x 0.500 microstrip z13, z14 0.861 x 0.050 microstrip z15, z16 0.187 x 0.782 microstrip rf input v bias z5 z7 z9 c1 z4 z6 z8 c2 z2 dut rf output z26 z28 z3 z11 z10 z12 c14 c16 + c6 v bias b3 c15 + z14 c13 z16 z18 z22 c4 z24 c22 v supply c28 + r1 r2 c8 b4 z13 z20 c23 c24 c25 c26 z15 z17 z21 c3 z23 z19 c17 v supply c27 + c7 c18 c19 c20 c21 z25 z27 c12 + c5 b1 c9 c10 c11 + b2 z1 table 5. mrf6p23190hr6 test circuit component designations and values part description part number manufacturer b1, b2, b3, b4 ferrite beads 2508051107y0 fair - rite c1, c2, c3, c4 5.1 pf chip capacitors atc100b5r1ct500xt atc c5, c6, c7, c8 5.6 pf chip capacitors atc100b5r6ct500xt atc c9, c13 0.01 f, 100 v chip capacitors c1825c103j1rac kemet c10, c14, c17, c22 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c11, c15 22 f, 25 v tantalum capacitors t491d226k025at kemet c12, c16 47 f, 16 v tantalum capacitors t491d476k016at kemet c18, c19, c20, c21, c23, c24, c25, c26 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c27, c28 330 f, 63 v electrolytic capacitors naczf331m63v nippon r1, r2 240 , 1/4 w chip resistors crcw12062400fkea vishay
4 rf device data freescale semiconductor mrf6p23190hr6 figure 2. mrf6p23190hr6 test circuit component layout r1 cut out area mrf6p23190h rev. 3 c12 c11 c10* c9* b1 b2 c5 c2 c1 c6 b3 b4 c13* c14* c16 c15 r2 c25 c26 c22 c23 c24 c28 c8 c3 c4 c27 c17 c18 c19 c20 c21 c7 *stacked.
mrf6p23190hr6 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?21 ?15 ?16 ?19 2430 2270 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance @ p out = 40 watts avg. 2410 2390 2370 2350 2330 2310 2290 14.4 ?44 25 24 23 22 ?38 ?40 d , drain efficiency (%) 14.2 14 13.8 13.6 13.4 13.2 13 ?42 ?36 ?18 12.8 ?13 g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?19 ?13 ?15 ?18 2430 2270 irl acpr im3 f, frequency (mhz) figure 4. 2 - carrier w - cdma broadband performance @ p out = 80 watts avg. 2410 2390 2370 2350 2330 2310 2290 14 ?34 35 34 32 31 ?28 ?30 ?32 d , drain efficiency (%) 13.8 13.6 13.4 13.2 13 12.8 12.6 ?26 ?16 12.4 ?12 figure 5. two - tone power gain versus output power 10 10 16 1 i dq = 2850 ma 2375 ma p out , output power (watts) pep 500 g ps , power gain (db) 15 14 12 950 ma 13 100 v dd = 28 vdc, f1 = 2345 mhz, f2 = 2355 mhz two?tone measurements, 10 mhz tone spacing 11 figure 6. third order intermodulation distortion versus output power ?10 110 ?20 ?30 ?40 ?70 ?50 p out , output power (watts) pep intermodulation distortion (dbc) imd, third order v dd = 28 vdc, f1 = 2345 mhz, f2 = 2355 mhz two?tone measurements, 10 mhz tone spacing 100 0.5 1900 ma 1425 ma i dq = 950 ma 2375 ma 1900 ma 1425 ma 2850 ma ?60 v dd = 28 vdc, p out = 40 w (avg.), i dq = 1900 ma 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) v dd = 28 vdc, p out = 80 w (avg.), i dq = 1900 ma 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) d g ps d 0.5 500
6 rf device data freescale semiconductor mrf6p23190hr6 typical characteristics 400 11 17 1 0 60 p out , output power (watts) cw 10 16 14 12 50 40 30 d , drain efficiency (%) g ps , power gain (db) 15 13 v dd = 28 vdc i dq = 1900 ma f = 2350 mhz d g ps im3 (dbc), acpr (dbc) figure 7. intermodulation distortion products versus tone spacing 10 ?60 0 0.1 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 190 w (pep) i dq = 1900 ma, two?tone measurements (f1 + f2)/2 = center frequency of 2350 mhz 5th order 3rd order ?20 ?30 ?40 ?50 1 100 figure 8. pulsed cw output power versus input power figure 9. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power 0 ?55 p out , output power (watts) avg. 36 ?25 ?35 24 18 ?40 6 10 200 ?45 47 63 p3db = 55.1 dbm (325.54 w) p in , input power (dbm) v dd = 28 vdc, i dq = 1900 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2350 mhz 59 55 51 49 39 37 43 41 actual ideal 61 57 53 35 figure 10. power gain and drain efficiency versus cw output power figure 11. power gain versus output power p out , output power (watts) cw im3 g ps d , drain efficiency (%), g ps , power gain (db) imd, intermodulation distortion (dbc) p out , output power (dbm) g ps , power gain (db) v dd = 24 v 300 10 15 0 12 11 50 13 14 i dq = 1900 ma f = 2350 mhz 30 ?50 d acpr 28 v 32 v 45 1 ?30 100 150 200 10 20 12 ?30  c t c = ?30  c 85  c 25  c t c = ?30  c 85  c 25  c 85  c ?30  c 100 ?30  c 25  c 85  c 100 250 v dd = 28 vdc, i dq = 1900 ma f1 = 2345 mhz, f2 = 2355 mhz 2?carrier w?cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 25  c ?10 49 p6db = 55.73 dbm (374.11 w) p1db = 54.5 dbm (283.85 w) 85  c 65
mrf6p23190hr6 7 rf device data freescale semiconductor typical characteristics w - cdma test signal 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 40 w avg., and d = 23.5%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 10 0.0001 100 0 peak?to?average (db) figure 13. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf figure 14. 2-carrier w-cdma spectrum f, frequency (mhz) 3.84 mhz channel bw ?im3 in 3.84 mhz bw +im3 in 3.84 mhz bw ?acpr in 3.84 mhz bw +acpr in 3.84 mhz bw (db) +20 +30 0 ?10 ?40 ?50 ?60 ?70 ?80 ?20 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25 ?30
8 rf device data freescale semiconductor mrf6p23190hr6 z o = 50 z load z source figure 15. series equivalent source and load impedance f = 2300 mhz f = 2400 mhz f mhz z source z load 2300 9.31 - j12.12 7.89 - j32.78 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. v dd = 28 vdc, i dq = 1900 ma, p out = 40 w avg. z source z load input matching network device under test output matching network ? ?+ + 2310 9.27 - j11.93 7.61 - j32.19 2320 9.24 - j11.75 7.35 - j31.62 2330 9.21 - j11.57 7.10 - j31.06 2340 9.18 - j11.40 6.86 - j30.53 2350 9.16 - j11.23 6.64 - j30.01 2360 9.14 - j11.06 6.43 - j29.51 2370 9.13 - j10.90 6.23 - j29.02 2380 9.12 - j10.75 6.04 - j28.55 2390 9.11 - j10.59 5.86 - j28.09 2400 9.11 - j10.45 5.68 - j27.64 f = 2300 mhz f = 2400 mhz
mrf6p23190hr6 9 rf device data freescale semiconductor package dimensions case 375d - 05 issue e ni - 1230 notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.082 0.090 2.08 2.29 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 12 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4
10 rf device data freescale semiconductor mrf6p23190hr6 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 mar. 2007 ? removed lower thermal resistance and low gold plating bullets from features section as functionality is standard, p. 1 ? removed total device dissipation from max ratings table as data was redundant (information already provided in thermal characteristics table), p. 1 ? added maximum cw operation limitation and derating values to the maximum rating table to prevent a 200 c+ hot wire operating condition, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , on characteristics table, p. 2 ? removed forward transconductance from on characteristics table as it no longer provided usable information, p. 2 ? updated part numbers in table 5, component designations and values, to rohs compliant part numbers, p. 3 ? removed lower voltage tests from fig. 11, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced fig. 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added product documentation and revision history, p. 10 3 dec. 2008 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn13232, p. 1, 2 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table, related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? updated pcb information to show more specific material details, fig. 1, test circuit schematic, p. 3 ? updated part numbers in table 5, component designations and values, to latest rohs compliant part numbers, p. 3
mrf6p23190hr6 11 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale  and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005 - 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6p23190h rev. 3, 12/2008


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