AO4817 25v dual p-channel mosfet symbol v ds v gs i dm t j , t stg symbol typ max 50 62.5 73 110 r q jl 31 40 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w 25 gate-source voltage drain-source voltage -30 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv -6.9 -40 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 2 1.44 -55 to 150 t a =70c i d -8 product summary v ds (v) = -30v i d = -8a (v gs = -20v) r ds(on) < 18m w (v gs = -20v) r ds(on) < 21m w (v gs = -10v) esd rating: 1.5kv hbm 100% uis tested 100% rg tested general description the AO4817 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suita ble for use as a load switch or in pwm applications. th e device is esd protected. g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view soic-8 top view bottom view pin1 s1 g1 d1 s2 g2 d2 alpha & omega semiconductor, ltd.
AO4817 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 1 m a v gs(th) -1 -2.8 -3 v i d(on) -40 a 14.1 18 t j =125c 20 25 17.1 21 m w 44 m w g fs 15 s v sd -1 v i s -2.6 a c iss 1760 2200 pf c oss 360 pf c rss 255 pf r g 6.4 8 w q g 30 38 nc q gs 7 nc q gd 8 nc t d(on) 12.5 ns t r 10.5 ns t d(off) 40 ns t f 23 ns t rr 24 30 ns q rr 16 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-8a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-20v, i d =-8a reverse transfer capacitance i f =-8a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-24v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =-10v, i d =-8a i s =-1a,v gs =0v v ds =-5v, i d =-8a v gs =-4.5v, i d =-4a turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.8 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-8a gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any a given application depends on the user's specific board design. the current r ating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 3 : nov. 2010 alpha & omega semiconductor, ltd.
AO4817 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-4v -4.5v -5v -10v -6v 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 14 15 16 17 18 19 20 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-20v id=-8a v gs =-10v id=-8a 10 20 30 40 50 60 0 5 10 15 20 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-10v v gs =-20v i d =-8a 25c 125c alpha & omega semiconductor, ltd.
AO4817 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 5 10 15 20 25 30 35 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-8a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd.
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