semihow rev.1.0 jan 2006 HTX4-600 ? repetitive peak off- state voltage: 600v ? r.m.s on-state current (it (rms) =4a) ? high commutation dv/dt features HTX4-600 the triac HTX4-600 is suitable for ac switching appl ication, phase control application such as heater cont rol, motor control, lighting control, and static switching relay. general description 1.t1 2. t2 3. gate v drm = 600 v i t(rms) = 4.0a 1.t1 symbol 2.t2 3.gate htp4-600 htc4-600 htm4-600 abs o l ut e m a x i mum r a t i ng s ( t a =25 ) symbol value units v drm 600 v i t(rms) 4a 50hz 30 a 60hz 33 a v gm 7v i gm 0.5 a to-220 3 w to126/ml 1.5 w t stg -40 to +125 t j -40 to +125 storage temperature range operating temperature repetitive peak off-state voltage p gm peak gate power dissipation r.m.s on-state current (ta = 66 ) parameter peak gat e volt age peak gate current i tsm surge on-state current (one cycle, 50/60hz, peak, non repetitive)
semihow rev.1.0 jan 2006 HTX4-600 electrical characteristics ( t a =25 ) symbol parameter min typ max units i gt gate trigger current v d =6v, r l =10 ? 1+, 1-, 3- 20 ma v gt gate trigger voltage v d =6v, r l =10 ? 1+, 1-, 3- 1.5 v v gd non trigger gate volt age 0.2 v (dv/dt)c crit ical rat e of rise of off-state voltage at communication 5v / u s i h holding current 5 ma i drm repetitive peak off- state current 1.0 ma v tm peak on-state voltage 1.6 v test conditions tj=125 , v d =1/2v drm it=6a, inst, measurement tj=125 , vd=2/ 3vdrm (di/dt)c=-3a/ms v d =v drm , single phase, half wave, t j =125 thermal characteristics symbol parameter test conditions case min typ max units to-220 2.8 / w to-126/ml 3.5 / w junction to case thermal resistance r th(j-c)
semihow rev.1.0 jan 2006 HTX4-600 performance curves on-state current (a) fig 2.on-state voltage on-state voltage (v) 10 0 10 1 10 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 fig 1. gate characteristics gate current (ma) gate voltage (v) 10 1 10 0 10 -1 10 1 10 2 10 3 rms on-state current (a) fig 3. gate trigger voltage vs. junction temperature junction temperature ( ) 10 1 0.1 -50 0 50 100 150 v + gt1 v - gt1 v - gt3 fig 4. on state current vs. maximum power dissipation power dissipation (w) 10 9 8 7 6 5 4 3 2 1 0 1234567 8 0 fig 5. on state current vs. allowable case temperature rms on-state current (a) 1234567 130 120 110 100 90 8 0 allowable case temp ( ) time (cycles) 10 0 10 1 10 2 80 60 50 40 30 20 10 0 surge on-state current (a) fig 6. surge on-state current rating (non-repetitive) 70 i gt (t ) i gt (25 )
semihow rev.1.0 jan 2006 HTX4-600 fig 7. gate trigger current vs. junction temperature junction temperature ( ) 10 1 0.1 -50 0 50 100 150 i gt (t ) i gt (25 ) time (sec) 10 -1 10 0 10 2 10 1 transient thermal impedance ( /w) fig8. transient thermal impedance 10 -2 10 1 fig 7. gate trigger characteristics test circuit rg v 10? a 6v rg v 10? a 6v rg v 10? a 6v test procedure i test procedure ii test procedure iii
semihow rev.1.0 jan 2006 HTX4-600 package dimension htp4-600 (to-220)
semihow rev.1.0 jan 2006 HTX4-600 dimensions in millimeters dim millimeters a8 . 5 m a x b 12.0max c 13.0min d 3.80.2 g 0.780.08 g1 1.2 h2 . 8 m a x h3 1.27 k 2.50.2 l2 . 3 m a x 3.200.2 package dimension htc4-600 (to-126)
semihow rev.1.0 jan 2006 HTX4-600 corresponding symbol measurement a(mm) 7.99 0.25 b(mm) 11.12 0.25 c(mm) 14.5 0.5 e(mm) 3.625 0.125 f(mm) 1.4 0.12 g(mm) 0.76 0.08 g1(mm) 1.3 0.12 h(mm) 3.57 0.13 h3(mm) 2.01 0.13 i(mm) 2.99 0.38 k(mm) 1.0 0.12 l(mm) 2.3max 1(mm) 3.0 0.12 package dimension htm4-600 (to-126ml)
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