silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 1/9 electrostatic sensitive device observe handling precautions description rd05mmp1 is a mos fet type transistor specifically designed for uhf rf power amplifiers applications. features ?high power gain: pout>5.5w, gp>8 .9db@vdd=7.2v,f=941mhz ?high efficiency: 43%min. (941mhz) ?no gate protection diode application for output stage of high power amplifiers in 941mhz band mobile radio sets. rohs compliant rd05mmp1 is a rohs compliant product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it applicabl e to the following exceptions of rohs directions. 1.lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 40 v vgss gate to source voltage vds=0v -5 to +10 v pch channel dissipation tc=25 c 73 w pin input power zg=zl=50 ? 1.4 w id drain current - 3 a tch junction temperature - 150 c tstg storage temperature - -40 to +125 c rth j-c thermal resistance junction to case 1.7 c/w note: above parameter s are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 10 ua i gss gate to source leak current v gs =10v, v ds =0v - - 1 ua v th gate threshold voltage v ds =12v, i ds =1ma 0.5 - 2.5 v pout output power 5.5 6 - w d drain efficiency f=941mhz , v dd =7.2v pin=0.7w,idq=1.0a 43 - - % vswrt load vswr tolerance v dd =9.5v,po=5.5w(pin control) f=941mhz,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , lim its and conditions are subject to change. index mark [gate] 1.8+/-0.1 0.7+/-0.1 terminal no. (a)drain [output] (b)source [gnd] (c)gate [input] (d)source (b) (b) 0.95+/-0.2 2.6+/-0.2 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 notes: 1. ( ) typical value unit:mm (d) 0.2+/-0.05 top view side view bottom view side view (3.6) (4.5) standoff = max 0.05 detail a detail a outline drawing
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 2/9 electrostatic sensitive device observe handling precautions typical characteristics channel dissipation vs. am bient t em perat ure 0 10 20 30 40 50 60 0 40 80 120 160 200 a mbient tempera ture ta ( d e g : c. ) channel dissipation pch(w ) , on pcb with ter mal sheet and heat- sink *pcb: glass epoxy (t=0.8 mm) ther mal sheet: geltec cooh- 4000( 0.5) free air vgs-ids characteristics 0 2 4 6 8 012345 vgs(v) ids(a),gm(s) ta=+ 25c vds=10v ids gm vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 0123456789 vds(v) ids(a) ta=+ 25c vg s=4.5v vg s=4.0v vg s=3.5v vg s=3.0v vg s=5.0v vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) ciss(pf) ta=+ 25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) coss(pf) ta=+ 25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) crss(pf) ta=+25c f=1mhz
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 3/9 electrostatic sensitive device observe handling precautions typical characteristics pin-po characteristics @f=941mhz 0 10 20 30 40 5 101520253035 pin(dbm) po(dbm) , gp(db) , idd(a ) 0 20 40 60 80 d(%) ta=+ 25c f= 941mhz vdd=7.2v idq =1.0a po 3 33 gp pin-po characteristics @f=941mhz 0 5 10 15 20 0.0 0.5 1.0 1.5 pin ( w) pout(w) , idd(a) 0 10 20 30 40 50 60 70 80 d(%) po d idd ta= 25c f=941m hz vdd= 7.2v idq = 1.0a vdd-po characteristics @f=941mhz 0 2 4 6 8 10 4681012 vdd(v) po(w) 0 1 2 3 4 5 idd(a) po idd ta= 25c f=941m hz pin= 0.7w idq = 1.0a zg =zi=50 ohm vgs-ids charactoristics 2 0 2 4 6 8 012345 vgs(v) ids(a),gm(s) vds=10v tc=-25~+75c +25c +75c -25c
silicon rf power semiconductors rd05mmp1 rohs compliance, silicon mosfet power transistor, 941mhz, 5.5w rd05mmp1 17 aug 2010 4/9 electrostatic sensitive device observe handling precautions test circuit (f=941mhz) 4 q s j o h h j m e j o h
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