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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1556 description collector-emitter breakdown voltage- : v (br)ceo = -140v(min) high dc current gain- : h fe = 5000(min)@i c = -7a complement to type 2sd2385 applications designed for power amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -140 v v ceo collector-emitter voltage -140 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i b b base current-continuous -0.1 a p c collector power dissipation @ t c =25 120 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1556 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma ; i b = 0 -140 v v ce (sat) collector-emitter saturation voltage i c = -7a; i b = -7ma b -2.5 v v be( on ) base-emitter on voltage i c = -7a ; v ce = -5v -3.0 v i cbo collector cutoff current v cb = -140v ; i e =0 -5 a i ebo emitter cutoff current v eb = -5v; i c =0 -5 a h fe-1 dc current gain i c = -7a ; v ce = -5v 5000 30000 h fe-2 dc current gain i c = -12a ; v ce = -5v 2000 c ob output capacitance i e =0 ; v cb = -10v;f test = 1.0mhz 170 pf f t current-gain?bandwidth product i c =-1a ; v ce = -5v 30 mhz ? h fe- 1 classifications a b c 5000-12000 9000-18000 15000-30000 isc website www.iscsemi.cn 2 |
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