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www.irf.com 1 02/29/12 IRFTS9342PBF hexfet power mosfet notes through are on page 2 applications battery operated dc motor inverter mosfet system/load switch features and benefits top view 1 2 d g a d d d s 3 4 5 6 tsop-6 v ds -30 v v gs max 20 v r ds(on) max (@v gs = -10v) 40 m r ds(on) max (@v gs = -4.5v) 66 m q g typ 12 nc i d (@t a = 25c) -5.8 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. -5.8 -46 20 -30 -4.6 -55 to + 150 2.0 0.02 1.3 note form quantity irfts9342trpbf tsop-6 tape and reel 3000 orderable part number package type standard pack features benefits industry-standard tsop-6 package results in multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen ? 1

2 www.irf.com g d s repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. thermal resistance parameter typ. max. units r ??? 62.5 c/w static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? . 1 0 1. . . 1.0 10 100 100 . 1 1. .1 1 t d(on) turn-on delay time ??? 4.6 ??? t r rise time ??? 13 ??? t d(off) turn-off delay time ??? 45 ??? t f fall time ??? 28 ??? c iss input capacitance ??? 595 ??? c oss output capacitance ??? 133 ??? c rss reverse transfer capacitance ??? 85 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 20 30 ns q rr reverse recovery charge ??? 11 17 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = -25 a v gs = -4.5v, i d = -4.6a m v dd = -15v, v gs = -10v v ds = -15v r g = 6.8 10 . 0 1 a i d = -4.6a i d = -4.6a v gs = 0v v ds = -25v v ds = -24v, v gs = 0v t j = 25c, i f = -4.6a, v dd = -24v di/dt = 100a/ s t j = 25c, i s = -4.6a, v gs = 0v showing the integral reverse p-n junction diode. conditions ? = 1.0khz conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -5.8a ??? ??? -46 ??? ??? -2.0 mosfet symbol na ns a pf nc v gs = -10v v gs = -20v v gs = 20v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -5.8a v gs = -10v 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0246810121416 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v v ds = -6.0v i d = -4.6a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -7.0v -5.0v -4.5v -4.0v -3.5v -3.0v bottom -2.8v 60 s pulse width tj = 25c -2.8v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.8v 60 s pulse width tj = 150c vgs top -10v -7.0v -5.0v -4.5v -4.0v -3.5v -3.0v bottom -2.8v 1 2 3 4 5 6 7 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60 s pulse width

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc 0.4 0.6 0.8 1.0 1.2 1.4 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = -25 a i d = -250 a i d = -1.0ma id = -10ma i d = -1.0a

www.irf.com 5 fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 14. maximum avalanche energy vs. drain current fig 15 typical power vs. time

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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fig 16. for p-channel hexfet power mosfets 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 0 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -5.8a t j = 25c t j = 125c 0 10 20 30 40 50 -i d , drain current (a) 20 40 60 80 100 120 140 160 180 200 220 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = -4.5v vgs = -10v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -0.91a -1.4a bottom -4.6a 0.0001 0.001 0.01 0.10 1 10 time (sec) 0 10 20 30 40 50 60 70 80 90 100 p o w e r ( w )

6 www.irf.com fig 17a. gate charge test circuit fig 17b. gate charge waveform fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit fig 19b. switching time waveforms fig 19a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v ' ( 1 ) $
0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f

www.irf.com 7 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ tsop-6 package outline tsop-6 part marking information ww = (27-52) if prece de d by a le t t e r c h k j e f g d 0 2010 year b a y 2007 2008 2009 2006 2005 2003 2004 2001 2002 5 7 9 8 6 3 4 1 2 c 29 z 52 50 51 x y 30 d x 24 w wor k week 27 28 b a 26 25 z y 03 04 01 02 c d a b date code marking instructions ww = (1-26) if preceded by last digit of calendar year year y w week wor k 2020 2017 2018 2019 2016 2015 2013 2014 2011 2012 2010 2007 2008 2009 2006 2005 2003 2004 2001 2002 2020 2017 2018 2019 2016 2015 2013 2014 2011 2012 code top part number w = we e k y = year lot f = irf5801 (as shown here) indicates lead-free. note: a l ine above the wor k week a = s i3443dv b = irf 5800 g = irf 5803 d = ir f 5851 e = irf5852 i = irf 5805 c = i r f 58 50 n = irf 5802 k = irf 5810 part number code reference: j = irf 5806 h = irf 5804 o = irl t s 6342t rpb f p = irf t s 8342t rpbf s = not applicable r = irf t s 9342t rpbf t = irlt s 2242t rpb f

8 www.irf.com tsop-6 tape and reel information ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2012 data and specifications subject to change without notice. 8mm feed direction 4mm notes : 1. outline conforms to eia-481 & eia-541. 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. ms l 1 (per i p c/j e de c j -s t d-020d ??? ) rohs compliant yes tsop-6 qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines )

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